• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2005.11a
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• pp.166-167
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• 2005

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.397-409
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• 2004

There has been few studies of either domestic or international to apply CCT-ICP-MS for the precise analysis of As and Cr components associated with airborne particulate matter. To date, the use of CCT-ICP-MS is strongly recommended for the accurate analysis of the toxic trace metals; this is because CCT-ICP-MS technique prevents polyatomic spectral interferences involved in the determination of As and/or Cr components. Taking advantage of CCT-ICP-MS technique, the measurements of about 20 metals were undertaken in this study. The standard reference material (NIST SRM 2783) was used for analytical quality control. To improve analytical accuracy and of acid efficiency, we selected nitric acid based on a test of three kinds of acid for microwave digestion method 1 ) nitric acid. 2) nitric acid and hydrogen peroxide. and 3) nitric acid and perchloric acid. When this method was employed, relative errors to SRM values of Al, As, Cr Fe, Mg, Mn, Pb, Sb, V, and Zn fell below 20%, while those or Ca, Si, and Ti were higher than 20%. The overall results of our study show that the concentrations of As and V determined by CCT-ICP-MS were satisfied with the certificated values within a relative error of 20e1c, whereas those determined by ICP-MS were 10 times higher than the certificated values.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.37-40
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• 2001

The semiconductor's design rule becomes more stringent, hence the silicon-dioxide etching technique is important issue. In this work we compared the etching characteristics of different three types of Plasma source, Normal ICP, magnetized ICP and E-IC $P^{TM}$. The E-IC $P^{TM}$ source shows higher etch rate at lower pressure and this is advantageous for the fine pattern process. The etching characteristics were varied with external magnetic field frequency at I-lCP and this is examined with Nanospe $c^{TM}$ and SEM. We designed Langmuir probe system for time resolved diagnosis. ion density of E-ICP is varying periodically with the applied external magnetic field frequencyquency

• Microbiology and Biotechnology Letters
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• v.32 no.2
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• pp.110-116
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• 2004

The over-expression in E. coli of the pHLN1-SO(＋) and pHLN2-80(－) plasmids cloned an insecticidal crystal protein (ICP) gene (crylAal type) from Bacillus thuringiensis var. kurstaki HD 1 was investigated through in part, the deletion of -80 bp promoter and an alternative change of cloning vector system. Two recombinant plasmids were constructed in an attempt to analyze the over-expression of the ICP in relations to its gene structure possessing only -14 bp ［Shine-Dalgarno (SD) sequence of -80 bp promoter］. Also, anther two recombinant plasmids similarly cloned the icp gene in a different vector system. The amounts of ICP produced from the recombinants were measured by SDS-PAGE and confirmed by Western blot analysis. One clone, pHLRBS1-14 clone in which only the SD sequence in the inverted orientation icp gene appeared, was more evident than the pHLRBS2-14 clone in which only the -14 bp SD sequence of the right orientated icp gene was shown to exist. The pHLN2-80(－) clone produced more ICP proteins than the pHLRBS1-14 clone. In the two clones, pHLNUC1-80 right-oriented icp gene and the pHLNUC2-80 clone inverted-orientation icp gene in a new different vector, the pHLNUC2-80 produced more ICP proteins in E. coli system. These results indicate that the P/ac promoter, the inverted icp gene insertion and -80 bp promoter (-66 bp part of the icp gene promoters), were concerned with the expression of the icp gene in the recombinant plasmids. In addition, the expression mechanism might result from the disruption of the transcription-suppressing regions in the promoter regions.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 2006.11a
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• pp.307-311
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• 2006

Distributed Coordination Function (DCF) in IEEE 802.11 and Enhanced Distributed Channel Access (EDCA) in IEEE 802.11e are contention-based access mechanism in Wireless LAN. Both DCF and EDCA reduce collisions based on inter-frame space (IFS) and backoff mechanisms. However, collisions are unavoidable even with the two mechanisms. Especially, in the EDCA model, the collision can be classified into interclass and intraclass collision. To eliminate interclass collision in Wireless LAN, we propose an interclass collision protection (ICP) scheme by employing contention protection period (CPP) after backoff, Analysis is performed for one dimensional EDCA model and for the proposed ICP based EDCA model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.145-148
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• 2001

A large area plasma source using parallel $2{\times}2$ ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with $CH_4$ gas chemistry is optimized with the DOE (Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on $350{\times}300mm$ substrate at the 50Hz magnetization frequency of the E-ICP operation technique,

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.938-940
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• 1999

We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.145-148
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• 2001

A large area plasma source using parallel 2x2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH$_4$ gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350x300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique.

• Environmental Engineering Research
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• v.18 no.1
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• pp.3-8
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• 2013

Collision cell technology-inductively coupled plasma-mass spectrometry (CCT-ICP-MS) was used to measure the concentrations of approximately 19 elements associated with airborne PM2.5 samples that were collected from a roadside sampling station in Daejeon, Korea. Standard reference material (SRM 2783, air particulate on filter media) of the National Institute of Standards and Technology was used for the quality assurance of CCT-ICP-MS. The elemental concentrations were compared statistically with the certified (or recommended) values. The patterns of distribution were clearly distinguished between elements with their concentrations ranging over four orders of magnitude. If compared in terms of enrichment factors, it was found that toxic trace elements (e.g., Sb, Se, Cd, As, Zn, Pb, and Cu) of anthropogenic origin are much more enriched in PM2.5 samples of the study site. To the contrary, the results of the correlation analysis showed that PM2.5 concentrations can exhibit more enhanced correlations with the elements (e.g., Fe, K, Si, and Ti) arising from earth's crust. The findings of strong correlations between PM2.5 and the elements of crustal origin may be directly comparable with the dominant role of those species by constituting a major fraction of even PM2.5 as well as PM10 at the roadside area.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.197-197
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• 2012

Device 제작에 사용된 graphene은 일반적인 lithography 공정에서 resist residue에 의한 오염을 피할 수 없으며 이로 인하여 graphene의 pristine한 성질을 잃어버린다. 본 연구에서는 graphene을 저밀도의 argon inductively coupled plasma (Ar-ICP)를 통해 처리함으로서 graphene based back-gated field effect transistor (G-FET)의 특성변화를 유도한 결과에 대해서 보고한다. Argon capacitively coupled plasma (Ar-CCP)은 에 노출된 graphene은 강한 ion bombardment energy로 인하여 쉽게 planar C-C ${\pi}$ bonding (bonding energy: 2.7 eV)이 breaking되어 graphene의 defect이 발생되었다. 하지만 우리의 경우 저밀도의 Ar-ICP가 적용될 때 graphene의 defect이 제한되며 이와 동시에 contamination 만을 제거할 수 있었다. 소자의 전기적 측정 (Gsd-Vbg)을 통하여 contamination으로 인하여 p-doping된 graphene은 pristine 상태로 회복되었으며 mobility도 회복됨이 확인되었다. Ar-ICP를 이용한 graphene cleaning 방법은 저온공정, 대면적 공정, 고속공정을 모두 만족시키며 thermal annealing, electrical current annealing을 대체하여 graphene 기반 소자를 생산함에 있어 쉽고 빠르게 적용할 수 있는 강점이 있다.