• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.10
• /
• pp.1157-1162
• /
• 2007

In this paper, E-TDLNN(Expanded-Tapped Delay Line Neural Network) method is suggested to make the model of power amplifier effectively. This method is the one for making the model of power amplifier through the study in neural network to the target value, the measured output spectrum of power amplifier, after adding the external value factor, gate bias, as an invariant input to the TDLNN method which suggested the memory effect of power amplifier effectively. To prove the validity of suggested method, the data at 2 points, 3.45 V and 3.50 V of gate bias range $3.4{\sim}3.6V$ with the 0.01 V step change, are studied and the predicted results at the gate bias 3.40 V, 3.48 V, 3.53 V and 3.60 V shows good coincidence with the measured values.