• Title/Summary/Keyword: EEPROM

Search Result 133, Processing Time 0.164 seconds

Single Polysilicon EEPROM Cell and High-voltage Devices using a 0.25 μ Standard CMOS (0.25 μm 표준 CMOS 로직 공정을 이용한 Single Polysilicon EEPROM 셀 및 고전압소자)

  • Shin, Yoon-Soo;Na, Kee-Yeol;Kim, Young-Sik;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.19 no.11
    • /
    • pp.994-999
    • /
    • 2006
  • For low-cost embedded EEPROM, in this paper, single polysilicon EEPROM and n-channel high-voltage LDMOST device are developed in a $0.25{\mu}m$ standard CMOS logic process. Using these devices developed, the EEPROM chip is fabricated. The fabricated EEPROM chip is composed of 1 Kbit single polysilicon EEPROM away and high voltage driver circuits. The program and erase characteristics of the fabricated EEPROM chip are evaluated using 'STA-EL421C'. The fabricated n-channel high-voltage LDMOST device operation voltage is over 10 V and threshold voltage window between program and erase states of the memory cell is about 2.0 V.

Programming characteristics of single-poly EEPROM (Single-poly EEPROM 의 프로그램 특성)

  • 한재천;나기열;이성철;김영석
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.33A no.2
    • /
    • pp.131-139
    • /
    • 1996
  • Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

  • PDF

Design of a Cell Verification Module for Large-density EEPROM Memories (대용량 EEPROM 메모리 셀 검증용 모듈 회로 설계)

  • Park, Heon;Jin, RiJun;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.10 no.2
    • /
    • pp.176-183
    • /
    • 2017
  • There is a problem of long erase and program times in testing large-density memories. Also, there is a need of testing the VT voltages of EEPROM cells at each step during the reliability test. In this paper, a cell verification module is designed for a 512kb EEPROM and a CG (control gate) driver is proposed for measuring the VT voltages of a split gate EEPROM having negative erase VT voltages. In the proposed cell verification module, asymmetric isolated HV (high-voltage) NMOS devices are used to apply negative voltages of -3V to 0V in measuring erase VT voltages. Since erasing and programming can be done in units of even pages, odd pages, or a chip in the test time reduction mode, test time can be reduced to 2ms in testing the chip from 4ms in testing the even and the odd pages.

Design of a Low-Power and Low-Area EEPROM IP of 256 Bits for an UHF RFID Tag Chip (UHF RFID 태그 칩용 저전력, 저면적 256b EEPROM IP 설계)

  • Kang, Min-Cheol;Lee, Jae-Hyung;Kim, Tae-Hoon;Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • /
    • pp.671-674
    • /
    • 2009
  • We design a low-power and low-area asynchronous EEPROM of 256 bits used in a passive UHF RFID tag chip. For a low-power solution, we use a supply voltage of 1.8V and design a Dickson charge pump using N-type Schottky diodes with a low-voltage characteristic. And we use an asynchronous interface and a separate I/O method for a low-area solution of the peripheral circuit of the designed EEPROM. And we design a Dickson charge pump using N-type Schottky diodes to reduce an area of DC-DC converter. The layout area of the designed EEPROM of 256 bits with an array of 16 rows and 16 columns using $0.18{\mu}m$ EEPROM process is $311.66{\times}490.59{\mu}m^2$.

  • PDF

Design of a Small-Area, Low-Power, and High-Speed 128-KBit EEPROM IP for Touch-Screen Controllers (터치스크린 컨트롤러용 저면적, 저전력, 고속 128Kb EEPROMIP 설계)

  • Cho, Gyu-Sam;Kim, Doo-Hwi;Jang, Ji-Hye;Lee, Jung-Hwan;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.13 no.12
    • /
    • pp.2633-2640
    • /
    • 2009
  • We design a small-area, low-power, and high-speed EEPROM for touch screen controller IC. As a small-area EEPROM design, a SSTC (side-wall selective transistor) cell is proposed, and high-voltage switching circuits repeated in the EEPROM core circuit are optimized. A digital data-bus sensing amplifier circuit is proposed as a low-power technology. For high speed, the distributed data-bus scheme is applied, and the driving voltage for both the EEPROM cell and the high-voltage switching circuits uses VDDP (=3.3V) which is higher than the logic voltage, VDD (=1.8V), using a dual power supply. The layout size of the designed 128-KBit EEPROMIP is $662.31{\mu}m{\times}1314.89{\mu}m$.

EEPROM Charge Sensors (EEPROM을 이용한 전하센서)

  • Lee, Dong-Kyu;Yang, Byung-Do;Kim, Young-Suk;Kim, Nam-Soo;Lee, Hyung-Gyoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.8-8
    • /
    • 2010
  • 외부전하를 감지할 수 있는 EEPROM 구조를 기반으로 한 센서를 제안하였다. 부유게이트로부터 확장된 큰 면적의 접촉부위 (CCM)는 외부전하를 고정화하도록 설계되었으며, $0.13{\mu}m$ 단일-다결정 CMOS 공정에 적합한 적층의 금속-절연체-금속 (MIM) 제어케이트구조로 구성되었다. N-채널 EEPROM의 CCW 캐패시터 영역에 양의 전압이 인가되면 제어 게이트의 문턱전압이 음의 방향으로 변화하여 드레인 전류는 증가하는 특성을 보였다. 또한 이미 충전된 외부 캐패시터가 CCW의 부유게이트의 금속영역에 직접 연결되면, 외부 캐패시터로부터 유입된 양의 전하는 n-채널 EEPROM의 드레인 전류를 증가시키지만 반면에 음의 전하는 이를 감소시켰다. 외부 전압과 전하에 의해 PMOS의 특성은 NMOS에 비교하여 반대로 나타남이 확인되었다. EEPROM 인버터의 CCW 영역에 외부전하를 연결하면 인버터의 입-출력 특성이 기준 시료에 비해 외부전하의 극성에 따라 변화하였다. 그러므로, EEPROM 인버터는 외부전하를 감지하여 부유게이트에 고정된 전하의 밀도 크기에 따라 출력을 전압으로 표현할 수 있음을 확인하였다.

  • PDF

Design of an EEPROM for a MCU with the Wide Voltage Range

  • Kim, Du-Hwi;Jang, Ji-Hye;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.10 no.4
    • /
    • pp.316-324
    • /
    • 2010
  • In this paper, we design a 256 kbits EEPROM for a MCU (Microcontroller unit) with the wide voltage range of 1.8 V to 5.5 V. The memory space of the EEPROM is separated into a program and data region. An option memory region is added for storing user IDs, serial numbers and so forth. By making HPWs (High-voltage P-wells) of EEPROM cell arrays with the same bias voltages in accordance with the operation modes shared in a double word unit, we can reduce the HPW-to-HPW space by a half and hence the area of the EEPROM cell arrays by 9.1 percent. Also, we propose a page buffer circuit reducing a test time, and a write-verify-read mode securing a reliability of the EEPROM. Furthermore, we propose a DC-DC converter that can be applied to a MCU with the wide voltage range. Finally, we come up with a method of obtaining the oscillation period of a charge pump. The layout size of the designed 256 kbits EEPROM IP with MagnaChip's 0.18 ${\mu}m$ EEPROM process is $1581.55{\mu}m{\times}792.00{\mu}m$.

The NAND Type Flash EEPROM Using the Scaled SONOSFET (Scaled SONOSFET를 이용한 NAND형 Flash EEPROM)

  • 김주연;권준오;김병철;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • /
    • pp.145-150
    • /
    • 1998
  • 8$\times$8 bit scaled SONOSFET NAND type flash EEPROM that shows better characteristics on cell density and endurance than NOR type have been designed and its electrical characteristics are verified with computer aided simulation. For the simulation, the spice model parameter was extracted from the sealed down SONOSFET that was fabricated by $1.5mutextrm{m}$ topological design rule. To improve the endurance of the device, the EEPROM design to have modified Fowler-Nordheim tunneling through the whole channel area in Write/Erase operation. As a result, it operates Write/Erase operation at low current, and has been proven Its good endurance. The NAND type flash EEPROM, which has upper limit of V$_{th}$, has the upper limit of V$_{th}$ as 4.5V. It is better than that of floating gate as 4V. And a EEPROM using the SONOSFET without scaling (65$\AA$-l65$\AA$-35$\AA$), was also designed and its characteristics have been compared. It has more possibliity of error from the V$_{th}$ upper limit as 4V, and takes more time for Read operation due to low current. As a consequence, it is proven that scaled down SONOSFET is more pertinent than existing floating gate or SONOSFET without scaling for the NAND type flash EEPROM.EPROM.

  • PDF

A design on low-power and small-area EEPROM for UHF RFID tag chips (UHF RFID 태그 칩용 저전력, 저면적 비동기식 EEPROM 설계)

  • Baek, Seung-Myun;Lee, Jae-Hyung;Song, Sung-Young;Kim, Jong-Hee;Park, Mu-Hun;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.11 no.12
    • /
    • pp.2366-2373
    • /
    • 2007
  • In this paper, a low-power and small-area asynchronous 1 kilobit EEPROM for passive UHF RFID tag chips is designed with $0.18{\mu}m$ EEPROM cells. As small area solutions, command and address buffers are removed since we design asynchronous I/O interface and data output buffer is also removed by using separate I/O. To supply stably high voltages VPP and VPPL used in the cell array from low voltage VDD, Dickson charge pump is designed with schottky diodes instead of a PN junction diodes. On that account, we can decrease the number of stages of the charge pump, which can decrease layout area of charge pump. As a low-power solution, we can reduce write current by using the proposed VPPL power switching circuit which selects each needed voltage at either program or write mode. A test chip of asynchronous 1 kilobit EEPROM is fabricated, and its layout area is $554.8{\times}306.9{\mu}m2$., 11% smaller than its synchronous counterpart.

Design of Small-Area and High-Reliability 512-Bit EEPROM IP for UHF RFID Tag Chips (UHF RFID Tag Chip용 저면적·고신뢰성 512bit EEPROM IP 설계)

  • Lee, Dong-Hoon;Jin, Liyan;Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.16 no.2
    • /
    • pp.302-312
    • /
    • 2012
  • In this paper, small-area and high-reliability design techniques of a 512-bit EEPROM are designed for UHF RFID tag chips. For a small-area technique, there are a WL driver circuit simplifying its decoding logic and a VREF generator using a resistor divider instead of a BGR. The layout size of the designed 512-bit EEPROM IP with MagnaChip's $0.18{\mu}m$ EEPROM is $59.465{\mu}m{\times}366.76{\mu}m$ which is 16.7% smaller than the conventional counterpart. Also, we solve a problem of breaking 5V devices by keeping VDDP voltage constant since a boosted output from a DC-DC converter is made discharge to the common ground VSS instead of VDDP (=3.15V) in getting out of the write mode.