• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.7-12
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• 2023

The edge ring placed on the outside of the electrostatic chuck (ESC) is a key component for protecting the ESC and controlling the etching uniformity of the edge of the wafer. Therefore, it is very important to understand the etching phenomenon of edge rings for edge ring management and equipment homeostasis. In this study, a specimen with SiO₂ hard mask and underlying Si mold was installed on the edge ring surface and the etching results were measured by varying the edge ring 2MHz RF power. By developing PI-VM model with high prediction accuracy and analyzing the roles of key parameters in the model, we were able to evaluate the effect of plasma and sheath characteristics around the edge ring on edge ring erosion. This analysis method provided information necessary for edge ring maintenance and operation.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.71-71
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• 2017

플라즈마를 이용하는 건식 식각 또는 박막 증착 장비(PECVD)의 경우 웨이퍼에 rf bias를 인가하여 이온의 에너지와 입사각을 조절한다. 종래에는 웨이퍼의 가장 자리 3 mm영역을 공정 대상에서 제외하는 exclusion area로 지정하였으나 점차 공정 기술의 발달로 2 mm 이내로 감소하고 있다. 따라서 웨이퍼의 가장 자리에서 발생하는 전기장의 방향 및 크기 변화를 조절할 수 있는 기술의 개발이 필요하게 되었으며 그중 핵심적인 부품이 Si 또는 SiC로 제작되는 edge ring이다. Focus ring이라고도 불리는 이 부품은 웨이퍼 상에서 반경 방향으로 흐르는 가스의 유속이 가장 자리에 근접하면 빨라지는 현상과 이에 의해 식각/증착 화학 반응 속도가 증가하는 문제를 완화하기 위한 것과 적절한 전기 전도도를 부여함으로써 가장 자리의 전기장 분포를 최적화 할 수 있는 새로운 설계 변수로 활용할 수 있다. 스퍼터링의 경우에도 웨이퍼 중앙과 주변 부는 마그네트론 음극의 회전 링과의 입체각이 차이가 나므로 가장 자리의 경우 트렌치나 홀의 내측이 외측에 비해서 증착막의 두께가 얇아지는 문제가 있으며 건식 식각의 경우 홀의 형상이 수직에서 벗어나는 경향이 발생할 수 있다. 또한 사용 시간에 비례해서 edge ring의 형상이 변화하는데 상대적으로 고가품이어서 교체 주기를 설정하는 보다 합리적 기준이 필요하다. 본 연구에서는 전산 유체 역학 모델을 사용하는 ESI사의 CFD-ACE+를 활용하여 edge ring의 형상과 재질이 갖는 영향을 전산 모사하기 위한 기초 작업을 그림 1과 같이 진행하였다. 2D-CCP model에 Ar 가스를 가정하고 비유 전율 10내외 전도도 $0.1/Ohm{\cdot}m$정도의 재질에 대한 용량성 결합 플라즈마에 대해서 계산을 하고 이 때 기판에 인가되는 고주파 전력에 의한 이온의 입사 에너지 분포 및 각도 분포를 Monte Carlo 방법으로 처리하여 계산하였다.

• Journal of information and communication convergence engineering
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• v.8 no.3
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• pp.339-342
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• 2010

An iris image pattern positioning with preserved edge detector, ring zone and clock zone, frequency distribution and overlay matching is presented in this paper. Edge detector is required to be powerful and detail. That is proposed by overlaying Canny with LOG (CLOG). The two reference patterns are made from allocating each gray level on the clock zone and ring zone respectively. The normalized target image is overlaid with the clock zone reference pattern and the ring zone pattern to extract overlapped number, and make a matched frequency distribution to look through a symptom and position of human organ and tissue. The iterating experiments result in the ring and clock zone positioning evaluation.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.386-389
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• 2003

This paper proposes the architecture of a multiple ring based optical network with single hop between edge nodes using either the concept of circuit switching or multi-wavelength label. The structure of the multi-wavelength label, be shown through the single wavelength-band and the multiple wavelength-band that can reduce number of ring. To avoid the collision of the optical packets at an outward port, we proposed the dynamic allocation scheme of the outward optical packets based on the fiber do]ay lines(FDLs).

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.289-294
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• 2012

There are several indicators to represent characteristics of chemical mechanical planarization (CMP) such as material removal rate (MRR), surface quality and removal uniformity on a wafer surface. Especially, the removal uniformity on the wafer edge is one of the most important issues since it gives a significant impact on the yield of chip production on a wafer. Non-uniform removal rate at the wafer edge (edge effect) is mainly induced by a non-uniform pressure from nonuniform pad curvature during CMP process, resulting in edge exclusion which means the region that cannot be made to a chip. For this reason, authors tried to minimize the edge exclusion by using an edge profile control (EPC) ring. The EPC ring is equipped on the polishing head with the wafer to protect a wafer from the edge effect. Experimental results showed that the EPC ring could dramatically minimize the edge exclusion of the wafer. This study shows a possibility to improve the yield of chip production without special design changes of the CMP equipment.

• Korean Journal of Mathematics
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• v.27 no.3
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• pp.613-627
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• 2019

Consider a connected molecular graph G = (V, E) where V is the set of vertices and E is the set of edges. In G, vertices represent the atoms and edges represent the covalent bonds between atoms. In graph G, every edge (say) e = uv will be connected by two atoms u and v. The edge Szeged index is a topological index which has been introduced by Ivan Gutman. In this paper, we have computed edge Szeged indices of a hydrocarbon family called Benzene ring and is denoted by $(BR)_{n{\times}n}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

• Journal of IKEEE
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• v.11 no.4
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• pp.235-238
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• 2007

The planar edge termination techniques of field-ring and deep junction field-ring were investigated and optimized using a two-dimensional device simulator TMA MEDICI. By trenching the field ring site which would be implanted, a better blocking capability can be obtained. The results show that the p-n junction with deep junction field-ring can accomplish near 30% increase of breakdown voltage in comparison with the conventional field-rings. The deep junctionfield-rings are easy to design and fabricate and consume same area but they are relatively sensitive to surface charge. Extensive device simulations as well as qualitative analyses confirm these conclusions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.183-184
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• 2011

• Journal of applied mathematics & informatics
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• v.42 no.2
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• pp.367-377
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• 2024

Let G = (V, E) be a graph with p-vertices and q-edges and let R^◦ be a finite zero ring of order n. An injective function f : V (G) → {r₁, r₂, _…, r_k}, where r_i ∈ R^◦ is called vertex pair sum k-zero ring labeling, if it is possible to label the vertices x ∈ V with distinct labels from R^◦ such that each edge e = uv is labeled with f(e = uv) = [f(u) + f(v)] (mod n) and the edge labels are distinct. A graph admits such labeling is called vertex pair sum k-zero ring graph. The minimum value of positive integer k for a graph G which admits a vertex pair sum k-zero ring labeling is called the vertex pair sum k-zero ring index denoted by 𝜓_pz(G). In this paper, we defined the vertex pair sum k-zero ring labeling and applied to some graphs.