• Proceedings of the KIPE Conference
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• 1998.11a
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• pp.18-22
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• 1998

A PWM inverter with an induction motor often has a problem with a high frequency leakage current that flows through stray capacitor between stator windings and a motor frame to ground. This paper presents an equivalent circuit for high frequency leakage currents in PWM inverter feeding an induction motor, which forms an LCR series resonant circuit. A conventional common mode ckoke or reactor in series between the ac terminals of a PWM inverter and those of an ac motor is not effective to reduce the rms and average values of the leakage current, but effective to reduce the peak value. Furthermore, this paper proposes a leakage current damper which is different in damping principle from the conventional common mode choke. It is shown theoretically and experimentally that the leakage current damper is able to reduce the rms value of the leakage current to 25%, where the core used in the leakage current damper is smaller than that of the conventional common-mode choke

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.6
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• pp.82-87
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• 2013

Electrical leakage happens when faults in electrical apparatus or power lines occur. It causes electrical fires and electric shocks. In order to reduce accidents caused by electrical leakage current, it is important to detect faults effectively and shut off the power. In this paper, firstly we analyzed statistics of electrical fires and electric shocks caused by electrical leakage current. Secondly, standards of allowable leakage current and body impedance models were analyzed. Lastly, effective application methods for breaking electrical leakage current were suggested. The results will provide useful preventive measures of electrical fires and electric shocks caused by electrical leakage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.111-116
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• 2001

Poly-Si TFT's(Polysilicon thin filmtransistors) have been actively studied due to their applications in active matrix liquid crystal displays and active pull-up devices of CMOS SRAM's. For such applications, the leakage current has to be in the range of sub-picoampere. However, poly-Si TFT's suffer from anomalous high leakage currents, which is attributed to the emission of the traps present at gain boundaries in the drain junction. The leakage current has been analyzed by the field emission via grain-boundary traps and thermionic field emission over potential barrier located at the grain boundary. We found that the models proposed before are not consistent with the experimental results at far as drain-offset poly-Si TFT's we fabricated concern. In this paper, leakage current of drain-offset poly-Si TFT's with different offset lengths was studied. A conduction model based on the thermionic emission of the tunneling electrons is developed to identify the leakage mechanism. It was found that the effective grain size of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.

• Journal of Welding and Joining
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• v.27 no.5
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• pp.88-93
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• 2009

While the pinch instability theory (PIT) has been widely employed to analyze the spray transfer mode in the gas metal arc welding (GMAW), it cannot predict the detaching drop size accurately. The PIT is modified in this work to increase the accuracy of prediction and to simulate the molten tip geometry to be more physically acceptable. Since the molten tip becomes a cone shape in the spray mode, the effective wire diameter is formulated that the effective diameter is inversely proportional to current square. Modifications are also made to consider the finite length of the liquid column and current leakage through the arc. While the effective diameter influences drop transfer significantly, the current leakage has negligible effects. The effects of modifications on drop transfer are analyzed, and the predicted drop diameters show good agreements with the experimental data of the steel wire.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.44-44
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• 2009

While the pinch instability theory (PIT) has been widely employed to analyze the spray transfer mode in the gas metal arc welding (GMAW), it cannot predict the detaching drop size accurately. The PIT is modified in this work to increase the accuracy of prediction and to simulate the molten tip geometry to be more physically acceptable. Since the molten tip becomes a cone shape in the spray mode, the effective wire diameter is formulated that the effective diameter is inversely proportional to current square. Modifications are also made to consider the finite length of the liquid column and current leakage through the arc. While the effective diameter influences drop transfer significantly, the current leakage has negligible effects. The effects of modifications on drop transfer are analyzed, and the predicted drop diameters show good agreements with the experimental data of the steel wire.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.1
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• pp.194-202
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• 2017

In this study, we measured and analyzed electrical noise signals present in devices and systems operated in industrial facilities. Based on the analytic findings, we studied the most effective improvement measures for eliminating such noise signals. Leakage current and ground current generate data interferences in communication systems, and therefore we measured leakage current and ground current. We also measured and analyzed electrical noises in power systems to predict noise pathways and interference routes. Furthermore, we proposed the most effective and reliable improvement measures for blocking off various noise signals and safely eliminating them by improving the internal wiring of the facilities and grounding systems. As a final step, we conducted the proposed improvement measures and confirmed that they helped to improve the operations of the device sand systems in service by re-measuring electrical noise signals and comparing them with those measured before the proposed improvement measures were implemented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.101-102
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• 2009

SGOI MOSFETs with various Ge mole fractions were fabricated and compared to the SOI MOSFET. SGOI MOSFETs have a lager drain current and higher effective mobility than the SOI MOSFET as increased Ge mole fractions. The lattice constant difference causes lattice mismatch between the SiGe layer and the top-Si layer during the top-Si layer growth. However, SGOI MOSFETs have a lager leakage current at subthreshold region. Also, leakage current at subthreshold region increased with Ge mole fractions. This is attributable to the crystalline defects due to the lattice mismatch between the SiGe layer and the top-Si layer.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.440-444
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• 2018

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

• Tribology and Lubricants
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• v.12 no.4
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• pp.35-42
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• 1996

The labyrinth seal is one of the widely used non-contact type mechanical seal. Current work was emphasized on the investigation of the air jet effect on the labyrinth seal. To improve the sealing capability of conventional labyrinth seal, air jet was injected against through the leakage flow. In this study, both of the numerical analysis by CFD (Computational Fluid Dynamics) and the experimental measurement were carried out. Both of the turbulence aad the compressible flow model were introduced in CFD analysis. The sealing effect of the leakage clearance and the air jet magnitude were studied in the experiment. The reason of the enhanced sealing was explained as a reduction of effective clearance by jetting air. As a result, the air jet could reduce the effective clearance with a wide range of leakage clearance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.346-346
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• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.