• The Journal of the Convergence on Culture Technology
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• v.6 no.2
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• pp.467-472
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• 2020

Methods for deriving design input-parameters to ensure the stability of a structure on a common ground are generally well known. Folded metamorphic rocks, such as the study area, are highly foliated and have small faults parallel to the foliation, resulting in special research methods and tests to derive design input parameters, Etc. are required. The metamorphic rock ground with foliation development of several mm intervals has a direct shear test on the foliation surface, the strike/dip mapping of the foliation, the boring investigation to determine the continuity of the foliation, and the rock mass rating of the metamorphic rock. etc. are required. In the case of a large number of small foliation-parallel faults developed along a specific foliation plane, it is essential to analyze the lineament, surface geologic mapping for fault tracing, and direct shear test. Folded ground requires additional geological-structural-domain analysis, discontinuity analysis of stereonet, electrical resistivity exploration along the fold axis, and so on.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Advanced Composite Materials
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• v.17 no.2
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• pp.157-166
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• 2008

In this study, multiwalled carbon nanotubes (MWCNTs) were compounded with the poly($\varepsilon$-caprolactone) (PCL) matrix at the solution state using chloroform. For homogeneous dispersion of MWCNTs in polymer matrix, oxygen-containing groups were introduced on the surface of MWCNTs. The mechanical properties of the PCL/MWCNTs composites were effectively increased due to the incorporation of MWCNTs. The composites were characterized using scanning electron microscopy in order to obtain information on the dispersion of MWCNT in the polymeric matrix. In case of 1.2 wt% of MWCNTs in the matrix, strength and modulus of the composite increased by 12.1% and 164.3%, respectively. In addition, the dispersion of MWCNTs in the PCL matrix resulted in substantial decrease of the electrical resistivity of the composites as the MWCNTs loading was increased from 0 to 2.0 wt%. Furthermore, thermal stability of the PCL and PCL/MWCNTs-COOH composites were investigated using the data acquired from the thermogravimetric analysis. The detailed kinetics of the thermal degradation of the composites was investigated by analyzing their thermal behavior at different heating rates in a nitrogen atmosphere. Activation energy of thermal degradation was determined by using the equations proposed by Kissinger and Flynn-Wall-Ozawa. The apparent activation energy of PCL/MWCNTs-COOH composite was considerably higher than that of neat PCL.

• Journal of Convergence for Information Technology
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• v.10 no.8
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• pp.137-143
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• 2020

This study examined the effects of rapid thermal annealing (RTA) on the physical and chemical characteristics of thin silver (Ag) layers on SiO2 coated metal foils. Ag layers were annealed at various temperatures of the range between 150 ℃ and 550 ℃ for 20 min. The surface roughness and resistivity are increased at the annealing temperatures of 550 ℃. We also found that oxygen (O) and silicon (Si) atoms exist at the Ag film surface by using compositional analysis in the annealing temperatures of 550 ℃. The total reflectance is decreased with increasing temperature. These phenomena are due to an out-diffusion of Si atoms from SiO2 layers during the RTA annealing. The results offer the possibility of using it as a substrate for various flexible optoelectronic devices.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.288-294
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• 1998

Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.239-244
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• 1999

Bi-doped lanthanum magnetics $(La_{0.67-x}Bi_xCa_{0.33}MnO_3(x\;=\;0,\; 0.04,\; 0.1,\; 0.2))$ samples have been prepared by standard ceramic process. The crystallinity and microstructures of the samples have been investigated by x-ray diffractometry and optical microscopy, respectively. The magnetic and magnetoresistive properties of the samples have been measured by vibrating sample magnetometery and van der Pauw method, respectively, at the temperatures ranging of 100 K~300 K with applied magnetic field of 0.4~0.5 T. Good crystallinity and high Curie temperature (275 K) have been obtained for the Bi-doped samples with small dosage (x = 0.04, 0.1) even they were sintered at 120$0^{\circ}C$, which is about 20$0^{\circ}C$ lower than normal sintering temperature of 140$0^{\circ}C$. The Bi-doped samples with the small dosage showed lower relative electrical resistivity and higher magneto-resistive ratio compared to the undoped sample in the most temperatures measured. The Bi-doped samples also exhibited large magnetoresisitve ratio (maximum of 15% for x = 0.1) at room temperature even under a weak magnetic field of 0.4 T.

• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.213-218
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• 2004

Be-codoped GaMnAs layers were systematically grown via molecular beam epitaxy with varying Mn- and Be-flux. Mn flux was controlled to cover from solid solution type GaMnAs to precipitated GaMnAs. Two Be flux were chosen to exhibit semiconducting and metallic resistivity in the grown layers. The structural, electrical, and magnetic properties of GaAs:(Mn, Be) were investigated. The lightly Be-codoped GaMnAs layers showed ferromagnetism at room temperature, but did not reveal magnetotransport due to small magneto-resistance and high resistance of the matrix. However, room temperature magnetotransport could be observed in the degenerate Be-codoped GaMnAs layers, and which was assisted by the high conductivity of the matrix. The Be-codoping has promoted segregation of new ferromagnetic phase of MnGa as well as MnAs.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• 한국지구물리탐사학회:학술대회논문집
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• 1999.08a
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• pp.217-239
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• 1999

Investigation methods of cut slope are conducted generally only geological surface survey to gain engineering geological data of cut slopes. These methods have many problems such as limitation of investigation for a special area. So geophysical investigations such as geotomography, seismic and electrical resistivity methods have been used to search for failure surface in potential failure slopes or failed slopes. But investigation method using the borehole camera is recently a used method and it is thought that this method is more reliable method than other investigation methods because of being able to see by the eyes. Therefore, this paper was conducted investigations of 4 boleholes and BIPS (Borehole Image Processing System) to search for potential sliding surfaces and was applied to obtain information of discontinuity on failed highway slope. As the results of BIPS, we could decide potential sliding surface in the slope and conducted to check slope stability. And decided slope stability measures.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1438-1439
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• 2006

$Ge_{2}Sb_{2}Te_5$(GST) thin film at present is a promising candidate for a phase change random access memory (PCRAM) based on the difference in resistivity between the crystalline and amorphous phase. PCRAM is an easy to manufacture, low cost storage technology with a high storage density. Therefore today several major chip in manufacturers are investigating this data storage technique. Recently, A. Pirovano et al. showed that PCRAM can be safely scaled down to the 65 nm technology node. G. T Jeonget al. suggested that physical limit of PRAM scaling will be around 10 nm node. Etching process of GST thin ra films below 100 nm range becomes more challenging. However, not much information is available in this area. In this work, we report on a parametric study of ICP etching of GST thin films in $Cl_2$/Ar chemistry. The etching characteristics of $Ge_{2}Sb_{2}Te_5$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2$/Ar gas mixture. The etch rate of the GST films increased with increasing $Cl_2$ flow rate, source and bias powers, and pressure. The selectivity of GST over the $SiO_2$ films was higher than 10:1. X-ray photoelectron spectroscopy(XPS) was performed to examine the chemical species present in the etched surface of GST thin films. XPS results showed that the etch rate-determining element among the Ge, Sb, and Te was Te in the $Cl_2$/Ar plasma.