• 제목/요약/키워드: Electrically conductive film

검색결과 31건 처리시간 0.024초

전기전도성 필름제조를 위한 탄소나노튜브 용해도 향상 (Enhanced Carbon Nanotube Dissolution for Electrically Conductive Films)

  • 이건웅;한동희;박수동;강동필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.65-66
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    • 2006
  • Solubility of single wall carbon nanotubes (SWNTs) has been determined in various dispersing media by using the solvent parameters such as Kamlet-Taft parameter and 3-dimensional parameters. Nitric acid-treated SWNTs exhibit significantly improved solubility in hydrogen bondable solvents as well as in solvent mixtures. The forming bucky gel with ionic liquid allows for the new group of dissolving solvent. The dissolution behavior of SWNTs provides a route for SWNT dispersion/exfoliation in preparing electrically conductive films such as transparent electrode.

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반응성 스퍼트링에 의한 ITO의 형성과 유전체 소성공정중의 특성변화에 관한 연구 (The Effect of Dielectric Firing Process in PDP on the Properties of ITO Prepared by Reactive RF Sputtering)

  • 남상옥;지성원;손제봉;조정수;박정후
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.510-514
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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Electrospray를 통한 전도성 박막의 제조 (Preparation of Conductive $TiO_2$ thin film by Electrospray Depositon)

  • 이경화;김한성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.381-382
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    • 2008
  • $TiO_2$ colloidal solution was electrosprayed for preparing a conductive thin film with high quality. Electrospray is a technique of liquid dispersion electrically and a good method of manufacturing nanoparticle, nanofiber, porous membrane, film preparation and coating. Water and ethanol were used as solvents and their mixing ratio was varied for studying the influence of solvent volatile on nanoparticle dispersion. Various nozzles to control the thru-put of solutions.were examined. Integrated analytical method and scanning electron microscope were used to analyze integrity and microscopic images.

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반응성 스퍼트링으로 형성된 ITO의 유전채 소성에 따른 특성변화 (The Property Change of ITO Prepared by Reactive R.F. Sputtering in POP manufacturing Process)

  • 남상옥;지성원;손제봉;허근도;조정수;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1411-1413
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    • 1997
  • The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

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전도성 고분자를 이용한 ARAS 코팅 (ARAS coating with a conducting polymer)

  • 김태영;이보현;김종은;서광석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.1039-1042
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    • 2001
  • A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

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Catalyst-Free and Large-Area Deposition of Graphitic Carbon Films on Glass Substrates by Pyrolysis of Camphor

  • Nam, Hyobin;Lee, Woong
    • 한국재료학회지
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    • 제25권7호
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    • pp.341-346
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    • 2015
  • The feasibility of obtaining graphitic carbon films on targeted substrates without a catalyst and transfer step was explored through the pyrolysis of the botanical derivative camphor. In a horizontal quartz tube, camphor was subjected to a sequential process of evaporation and thermal decomposition; then, the decomposed product was deposited on a glass substrate. Analysis of the Raman spectra suggest that the deposited film is related to unintentionally doped graphitic carbon containing some $sp-sp^2$ linear carbon chains. The films were transparent in the visible range and electrically conductive, with a sheet resistance comparable to that of graphene. It was also demonstrated that graphitic films with similar properties can be reproduciblyobtained, while property control was readily achieved by varying the process temperature.

A Study on the E-textiles Dip-Coated with Electrically Conductive Hybrid Nano-Structures

  • Lee, Euna;Kim, Jongjun
    • 패션비즈니스
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    • 제21권6호
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    • pp.16-30
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    • 2017
  • Currently, e-textile market is rapidly expanding and the emerging area of e-textiles requires electrically conductive threads for diverse applications, including wearable innovative e-textiles that can transmit/receive and display data with a variety of functions. This study introduces hybrid nano-structures which may help increase the conductivity of the textile threads for use in wearable and flexible smart apparels. For this aim, Ag was selected as a conductive material, and yarn treatment was implemented where silver nanowire (AgNW) and graphene flake (GF) hybrid structures overcome the limitations of the AgNW alone. The yarn treatment includes several treatment conditions, e.g., annealing temperature, annealing time, binder material such as polyurethane (PU), coating time, in order to search for the optimum method to form stable conductive nano-scale composite materials as thin film on the surface of textile yarns. Treatedyarns showed improved electrical resistance readings. The functionality of the spandex yarn as a stretchable conductive thread was also demonstrated. When the yarn specimens were treated with colloid of AgNW/GF, relatively good electrical conductivity value was obtained. During the extension and recovery cycles of the treated yarns, the initial resistance values did not deteriorate significantly, since the network of nanowire structure with the support of GF and polyurethane stayed flexible and stable. Through this research, it was found that when one-dimensional structure of AgNW and two-dimensional structure of GF were mixed as colloids and treated on the surface of textile yarns, flexible and stretchable electrical conductor could be formed.

Development of Carbon Nanotube-copper Hybrid Powder as Conductive Additive

  • Lee, Minjae;Ha, Seoungjun;Lee, Yeonjoo;Jang, Haneul;Choi, Hyunjoo
    • 한국분말재료학회지
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    • 제25권4호
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    • pp.291-295
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    • 2018
  • A conductive additive is prepared by dispersing multi-walled carbon nanotubes (MWCNTs) on Cu powder by mechanical milling and is distributed in epoxy to enhance its electrical conductivity. During milling, the MWCNTs are dispersed and partially embedded on the surface of the Cu powder to provide electrically conductive pathways within the epoxy-based composite. The degree of dispersion of the MWCNTs is controlled by varying the milling medium and the milling time. The MWCNTs are found to be more homogeneously dispersed when solvents (particularly, non-polar solvent, i.e., NMP) are used. MWCNTs gradually disperse on the surface of Cu powder because of the plastic deformation of the ductile Cu powder. However, long-time milling is found to destroy the molecular structure of MWCNTs, instead of effectively dispersing the MWCNTs more uniformly. Thus, the epoxy composite film fabricated in this study exhibits a higher electrical conductivity than 1.1 S/cm.

The Study on the Characteristic of Phase Transition in Differential Thickness of Se1Sb2Se2 Thin Films

  • Lee Jae-Min;Yang Sung-Jun;Shin Kyung;Chung Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • 제5권6호
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    • pp.241-243
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can be controlled by electrical or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. In this letter, the characteristics of phase transition in differential chalcogenide thin film are investigated. Al was used for the electrode as the thickness of 100, 300, 500 nm, respectively.

Cu 전해도금을 이용한 TSV 충전 기술 (TSV Filling Technology using Cu Electrodeposition)

  • 기세호;신지오;정일호;김원중;정재필
    • Journal of Welding and Joining
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    • 제32권3호
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    • pp.11-18
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    • 2014
  • TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.