• The Journal of Natural Sciences
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• v.18 no.1
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• pp.9-16
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• 2007

The electro-optic Q-switching device for medical high power laser depends on the relation between the population inversion and the Q-switching time. The polarization changes in applied voltage must be experimented to use each $LiNbO_3$ crystal for Q-switching in high power laser.

• Journal of Digital Contents Society
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• v.10 no.2
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• pp.199-207
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• 2009

The Q-switching the shutter or the different optical science element puts in within the laser light resonator and the storehouse departs from the within the resonator it loses the mortar and the reversal distribution which when is sufficient creates from within the active medium, opens the shutter instantaneously and it is to do to be made to emit with the light where the energy which is accumulated within the resonator is strong very. Like this Q-switching of laser resonator--It decreases factor increasing suddenly to make. To method of Laser Q-switching mechanical switching methods, electro-optic switching methods and switching by saturable absorber methods, acousto-optic switching method etc. 4 kind are being used on a large scale. In these people the conversion which is electric in compliance with the effect which is electrooptics is widely being used the Q-switching pulse of short pulse width because being it will be able to create. Consequently, Pockel cell where it has the quality of electrooptics effect) the Q-it is become known that it is suitable it uses with switch. From the research which it sees FET and one-chip microprocessor where it is a switching element and pulse transfomer to plan and produce pockel cell Q-switch driving gears, pulse style Nd: It applied in YAG Laser system and it investigated and researched the operating characteristic of the Q-switch. Also, the Q-switch leads and Nd where it is output: YAG with forecast in compliance with a theoretical calculation it comes to buy laser beam side politics it compared and laser beam qualities which had become Q-switching it analyzed.

• Current Optics and Photonics
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• v.7 no.3
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• pp.297-303
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• 2023

In this paper, we demonstrated a high-energy (285 mJ) mid-infrared flashlamp-pumped electro-optically 𝚀-switched Er:YAG master oscillator power amplifier (MOPA) system and comprehensively investigated its temporal, spectral, and spatial characteristics. To increase the output energy, we optimized the delay between the timings at which the flashlamps of the master oscillator and power amplifier were triggered. In addition, the output energy was improved while minimizing thermal effects by cooling the MOPA system to a temperature slightly above the dew point. Consequently, the MOPA structure boosted the output energy without damaging the lithium niobate Pockels cell, which is a crucial element in 𝚀-switching. This design realized pulses with energies up to 0.285 J and pulse durations of approximately 140 ns at a wavelength of 2,936.7 nm. This high-energy mid-IR Er:YAG MOPA system can be used for various scientific, engineering, and military underwater applications.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.320-326
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• 2008

The output characteristics of a laser-diode pumped electrooptic Q-switched Nd:YAG ceramic laser were investigated. The output energy of a Q-switched Nd:YAG ceramic laser was optimized under an output coupler reflectivity of 77%, a laser-diode pulse width of $1,000\;{\mu}s$, and a delay time of $985\;{\mu}s$. The output energy of the Q-switched pulse was measured to be 0.35 mJ with a pulse width of 4 ns under a pump energy of 17.9 mJ. The output efficiency and the peak power were 1.9% and 87.5 kW, respectively.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.