• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.395-400
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• 2011

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1631-1636
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• 2010

In this study, we demonstrate a nano-scale lithograph obtained on localized (100) silicon (p-type) surface using by modified AFM (Atomic force microscope) apparatuses and by adopting controlling methods. AFM-based experimental apparatuses are connected to a customized pulse generator that supplies electricity between the conductive tip and the silicon surface, while maintaining a constant humidity throughout the lithography process. The pulse durations are controlled according to various experimental conditions. The electrochemical reaction induced by the pulses occurs in the gap between the conductive tip and silicon surface and result in the formation of nanoscale oxide particles. Oxide particles with various heights and widths can be created by AFM surface modification; the size of the oxide particle depends on the pulse durations and the applied electrical conditions under a humid environment.