• Electrical & Electronic Materials
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• v.8 no.6
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• pp.685-692
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• 1995

The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.554-562
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• 2012

Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.152-157
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• 1995

The electron transport coefficients in $SP_{6}$ gas is calculated and analysed for range of E/N values from 150∼800(Td) by a Monte Carlo simulation, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in neatly agreement with the respective experimental and theoretical for a range of E/N. The validity of the results obtained has been confirmed by a Monte Carlo simulation carried out parallel to the analysis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.67-74
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• 2009

Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1keV once it is calibrated in the higher energy region.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.4
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• pp.743-747
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• 2007

There has been steady effect for the development of the electron-beam lithography technologies for the circuit patterning of the future semiconductor devices. In this study, we have performed a Monte-Carlo simulation whore $1{\times}10^4$ electrons with various kinetic energies (100eV, 300eV, 500eV, 700eV, and 1000eV) were shot into polymethyl methacrylate(PMMA) resist of 100-nm thickness. The penetration depth of each electron beam in the resist layer were analyzed using Gaussian analysis method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.56-59
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• 1988

Electron transport properties of gallium arsenide in an electric field are simulated the drift velocity, Mn.energy, electron occupation, mobility in the temperature range $77^{\circ}K-500^{\circ}K$ using a Monte Carlo Method. Therefore it can be used for a GaAs MESFET design.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.113-115
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• 2002

The Monte Carlo simulation method is a numerical solution to a problem that models objects interacting with other objects or their environment based upon simple object-object or object-environment relationships. In spite of its great accuracy, It was turned away because of long calculation time to simulate a model. But, it is used to simulate a linear accelerator frequently with the advance of computer technology. To simulate linear accelerator in Monte Carlo simulations, there are many parameters needed to input to Monte Carlo code. These data can be supported by a linear accelerator manufacturer. Although the model of a linear accelerator is the same, a different characteristic property can be found. Thus, we performed a commissioning process of 6MV photon beam in Varian 2300C/D model with BEAM/EGS4 Monte Carlo code. The head geometry data were put into BEAM/EGS4 data. The mean energy and energy spread of the electron beam incident on the target were varied to match Monte Carlo simulations to measurements. TLDs (thermoluminescent dosimeter) and radiochromic films were employed to measure the absorbed dose in a water phantom. Beam profile was obtained in 40cm${\times}$40cm field size and Depth dose was in 10cm${\times}$10cm. At first, we compared the depth dose between measurements and Monte Carlo simulations varying the mean energy of an incident electron beam. Then, we compared the beam profile with adjusting the beam radius of the incident electron beam in Monte Carlo simulation. The results were found that the optimal mean energy was 6MV and beam radius of 0.1mm was well matched to measurements.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.3
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• pp.79-85
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• 1990

Monte Carlo simulation of hot-electron transport in $Al_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$ As modulation-doped structure has been performed in which the nonparabolicity in $\Gamma$ valley is taken into account. The calculated results show that the inclusion of the nonparabolicty effect results in a huge decrease in drift velocity.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.