• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.31-32
• /
• 2008

The structure of OLEDs with conventional heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. NPB used as a hole transport layer and DPVBi used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts device's stability. Mixing of the hole transport layerand the emitting layer removes abrupt interface between the hole transport. layer and the electron transport layer. The stability of OLED with graded mixed-layer developed in this study was improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.100-101
• /
• 2008

We have developed low voltage driving white organic light emitting diode with new electron transport layer. The with light emission was realized with a yellow dopant, rubrene and blue-emitting DPVBi layer. The new electron transport layer results in very high current density at low voltage, causing a reduction of driving voltage. The device with new electron transport layer shows a brightness of 1000 cd/m2 at 4.3 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.1
• /
• pp.45-49
• /
• 2014

We have fabricated white organic light-emitting diodes (OLEDs) using several thicknesses of electron-transport layer. The multi-emission layer structure doped with red and blue phosphorescent guest emitters was used for achieving white emission. 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) was used as an electron-transport layer. The thickness of BCP layer was varied to be 20, 55, and 120 nm. The current efficiency, emission and recombination characteristics of multi-layer white OLEDs were investigated. The BCP layer thickness variation results in the shift of emission spectrum due to the recombination zone shift. As the BCP layer thickness increases, the recombination zone shifts toward the electron-transport layer/emission-layer interface. The white OLED with a 55 nm thick BCP layer exhibited a maximum current efficiency of 40.9 cd/A.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.3
• /
• pp.252-256
• /
• 2009

We have developed low driving voltage white organic light emitting diode with a new electron transport material, triphenylphosphine oxide ($Ph_{3}PO$). The white light emission was realized with a rubrene yellow dopant and blue-emitting DPVBi layer. The new electron transport layer results in a very high current density at low voltage, resulting in a reduction of driving voltage. The device with a new electron transport layer shows a brightness of $1150\;cd/m^2$ at a low driving voltage of 4.3 V.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.4
• /
• pp.94-98
• /
• 2020

The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1018-1021
• /
• 2003

We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1805-1808
• /
• 2006

In this paper, we describe a versatile use of fullerene(C60) as a charge transporting material for organic light-emitting diodes. The use of fullerene as a buffer layer for an anode, a doping material for hole transport layer, and an electron transport layer was investigated. Fullerene improved the hole injection from an anode to a hole transport layer by lowering the interfacial energy barrier and enhanced the lifetime of the device as a doping material for a hole transport layer. In addition, it was also effective as an electron transporting material to get low driving voltage in the device.

• International Journal of Precision Engineering and Manufacturing
• /
• v.7 no.2
• /
• pp.52-55
• /
• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.679-682
• /
• 2007

We have developed low voltage operating OLEDs with new electron transport layer. The device having a structure of ITO/2TNATA/HTL:Rubrene(1%)/HTL /new ETL/LiF/Al have been used. The voltage for achieving $1,000\;cd/m^2$ was 4.1 V, whereas the turn on voltage for the brightness of $1\;cd/m^2$ was 2.8 V. This high luminance at low operating voltage is caused by the high current density, resulting from high electron conduction property of the new electron transport layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.853-858
• /
• 2008

The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.