• Title/Summary/Keyword: Electronic packaging

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Vacuum Packaging Technology of AC-PDP using Direct-Joint Method

  • Lee, Duck-Jung;Lee, Yun-Hi;Moon, Gwon-Jin;Kim, Jun-Dong;Choi, Won-Do;Lee, Sang-Geun;Jang, Jin;Ju, Byeong-Kwon
    • Journal of Information Display
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    • v.2 no.4
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    • pp.34-38
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    • 2001
  • We suggested new PDP packaging technology using the direct joint method, which does not need an exhausting hole and tube. The advantages of this method are simple process, short process time and time panel package. To packaging, we drew the seal line of glass frit by dispenser followed by forming the lump, which provide pumping-out path during the packaging process. And, we have performed a pretreatment of glass frit to reduce the out-gases. After which, both front and rear glass plates were aligned and loaded into vacuum packaging chamber. The 4-inch monochrome AC-PDP was successfully packaged and fully emitted with brightness of 1000 $cd/m^2$. Also, glass frit properties for pretreatment condition was investigated by AES and SEM analyses.

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Implementation of Small Size Dual Band PAM using LTCC Substrates (LTCC를 이용한 Small Size Dual Band PAM의 구현)

  • Shin, Yong-Kil;Chung, Hyun-Chul;Lee, Joon-Geun;Kim, Dong-Su;Yoo, Jo-Shua;Yoo, Myong-Jae;Park, Seong-Dae;Lee, Woo-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.357-358
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    • 2005
  • Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

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Study on the Compositions of Photosensitive Ag Paste for Patterning Embedded Fine-Line Inductor in LTCC (LTCC 내장형 미세 라인 인덕터 구현을 위한 감광성 Ag Paste 조성에 관한 연구)

  • Lee, Sang-Myoung;Park, Seong-Dae;Yoo, Myong-Jae;Lee, Woo-Sung;Kang, Nam-Kee;Nahm, Sahn
    • Journal of the Korean Ceramic Society
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    • v.44 no.3 s.298
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    • pp.157-161
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    • 2007
  • Line width under $100\;{\mu}m$ with good resolution is difficult to achieve using conventional thick-film process utilizing screen printing method. However combined with lithography technology finer line and space for miniaturization and highly integrated package is achievable. In this study, photosensitive Ag paste of optimum formulation used for thick film lithography technology was fabricated by various Ag powder, glass powder and additives. As the result, line width of $30\;{\mu}m$ with good definition and reduced mismatch during co-firing with LTCC substrate was acquired. Formulated Ag paste was used to pattern embedded fine line inductor with over 90% yield.

Analysis of Via Loss Characteristic in Embedded DPDT Switch Using SoP-L Fabrication (SoP-L 공정을 이용한 DPDT 스위치를 임베딩 할 경우 스위치 특성에 영향을 주는 Via의 loss 분석)

  • Mun, Jong-Won;Gwon, Eun-Jin;Ryu, Jong-In;Park, Se-Hoon;Kim, Jun-Chul
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.557-558
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    • 2008
  • This paper presents the effects of via losses to be connected with an embedded DPDT(Double Pole Double Thru) in a substrate. The substrate consists of two ABF(Ajinomoto Bonding Film) and a Epoxy core. In order to verify and test effects of via, via chains in a substrate using SoP-L process are proposed and measured. Via loss can be calculated as averaging the total via holes. The exact loss of a DPDT switch embedded in substrate are extracted by using the results of via chain and measured data from embedded DPDT. The calculated one via insertion loss is about 0.0005 dB on basis of measured via chains. This result confirms very low loss in via. So the inserti on loss of the embedded switch is confirmed only switch loss as loss is 0.4 dB.

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Vacuum Packaging and Operating Properties of Micro-Tunneling Sensors

  • Park, H.W.;Lee, D.J.;Son, Y. B.;Park, J.H.;Oh, M. H.;Ju, B. K.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.110-110
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    • 2000
  • Cantilever-shaped lateral field emitters were fabricated and their electrical characteristics were tested. As shown in Fig.1, poly-silicon cantilevers were fabricated by the surface micromachining and they were used to the vacuum magnetic field sensors. The tunneling devices were vacuum sealed with the tubeless packaging method, as shown in Fig.2 and Fig.3. The soda-lime glasses were used for better encapsulation, so the sputtered silicon and the glass layers on the soda-lime glasses were bonded together at 1x10$^{-6}$ Torr. The getter was activated after the vacuum sealing fur the stable emissions. The devices were tested outside of the vacuum chamber. Through vacuum packaging, the tunneling sensors can be utilized. Fig.4 shows that the sensor operates with the switching of the magnetic field. When the magnetic field was applied to the device, the anode currents were varied by the Lorentz force. The difference of anode currents can be varied with the strength of the applied magnetic field.

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AlN Based RF MEMS Tunable Capacitor with Air-Suspended Electrode with Two Stages

  • Cheon, Seong J.;Jang, Woo J.;Park, Hyeon S.;Yoon, Min K.;Park, Jae Y.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.1
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    • pp.15-21
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    • 2013
  • In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

Fully Embedded 2.4GHz Compact Band Pass Filter into Multi-Layered Organic Packaging Substrate

  • Lee, Seung-J.;Lee, Duk-H.;Park, Jae-Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.1
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    • pp.39-44
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    • 2008
  • In this paper, fully embedded 2.4GHz WLAN band pass filter (BPF) was investigated into a multi-layered organic packaging substrate using high Q spiral stacked inductors and high Dk MIM capacitors for low cost RF System on Package (SOP) applications. The proposed 2.4GHz WLAN BPF was designed by modifying chebyshev second order filter circuit topology. It was comprised of two parallel LC resonators for obtaining two transmission zeros. It was designed by using 2D circuit and 3D EM simulators for finding out optimal geometries and verifying their applicability. It exhibited an insertion loss of max -1.7dB and return loss of min -l7dB. The two transmission zeros were observed at 1.85 and 6.7GHz, respectively. In the low frequency band of $1.8GHz{\sim}1.9GHz$, the stop band suppression of min -23dB was achieved. In the high frequency band of $4.1GHz{\sim}5.4GHz$, the stop band suppression of min -l8dB was obtained. It was the first embedded and the smallest one of the filters formed into the organic packaging substrate. It has a size of $2.2{\times}1.8{\times}0.77mm^3$.

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A Thermal Model for Electrothermal Simulation of Power Modules

  • Meng, Jinlei;Wen, Xuhui;Zhong, Yulin;Qiu, Zhijie
    • Journal of international Conference on Electrical Machines and Systems
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    • v.2 no.4
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    • pp.441-446
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    • 2013
  • A thermal model of power modules based on the physical dimension and thermal properties is proposed in this paper. The heat path in the power module is considered as a one-dimensional heat transfer in the model. The method of the parameters extraction for the model is given in the paper. With high speed and accuracy, the thermal model is suit for electrothermal simulation. The proposed model is verified by experimental results.

Implementation of UltraWideband Filter using Ceramic Multilayer Configuration (세라믹 적층공정을 이용한 UWB Filter 구현에 관한 연구)

  • Yoo, Chan-Sei;Lee, Joong-Keun;Lee, Woo-Sung;Kang, Nam-Kee
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.45-46
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    • 2006
  • An ultrawide bandpass filter with sharp rejection and wider stopband is designed and implemented using multilayer ceramic configuration. The proposed filter is composed of a broadside coupled structure and a ring type filter with an embedded stripline stub. The measured results show that the fractional bandwidth and upper stopband of the proposed filter are 106 % and better than -30 dB, respectively. The insertion loss is less than 1 dB, and group delay is less than 0.3 ns in the passband. In addition, ring and broadside coupled gap structures are characterized and compared to the proposed structure.

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Implementation of V-Band Filter using MCM-D Technology (MCM-D 기판 공정 기술을 이용한 V-Band Filter 구현)

  • Yoo, Chan-Sei;Song, Sang-Sub;Park, Jong-Chul;Seo, Kwang-Seok
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.169-170
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    • 2006
  • A band pass filter for the V-band application with unique circuit and structure was designed and implemented using 2-metals, 3-BCB layers. In the mean while the effective electrical conductivity of metal layer was extracted and its value was $4{\times}10^7S/m$. The insertion loss of band pass filter at 60 GHz was 3.0 dB and group delay was below 0.1 ns.

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