• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.37-42
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• 2007

Copper deposition studies have been actively studied since interests on 3D SiP were increased. The defects inside via can be easily formed due to the current density differences on entrance, bottom and wall of via. So far many different additives and current types were discussed and optimized to obtain void-free copper via filling. In this research acid cupric sulfate plating bath containing additives such as PEG, SPS, JGB, PEI and wave current applied electroplating were examined. The size and shape of grain were influenced by the types of organic additives. The cross section of specimen were analyzed by FESEM. When PEI was added, the denser copper deposits were obtained. Electroplaing time was reduced when 2 step via filling was employed.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.259-265
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• 2005

Characteristics of electroplated Ni films and $Ni-Al_2O_3$ composite films, such as yield strength, fracture elongation, and $Al_2O_3$ content, were evaluated as a function of electroplating current density. $Al_2O_3$ content was $11.48\~11.64\;vol\%$ for $Ni-Al_2O_3$ composite films electroplated at $5\~20\;mA/cm^2$, and decreased to $8.41\;vol\%$ at $30\;mA/cm^2$ $Ni-Al_2O_3$ possessed yield strengths higher than those of Ni films. Especially, $Ni-Al_2O_3$ fabricated at $5\;mA/cm^2$ exhibited $50\%$ improved yield strength. Fracture elongations of Ni and $Ni-Al_2O_3$ decreased with increasing the electroplating current density. $Ni-Al_2O_3$ electroplated at $5\;mA/cm^2$ exhibited more uniform dispersion of $Al_2O_3$ and higher yield strength and larger fracture elongation than the composite films processed at other current densities.