• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1465-1468
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• 2006

We developed a new ellipsometer for MURA detection. This ellipsometer can measure MURA along the slit line on the sample with high sensitivity, because this ellipsometer irradiates a slit beam onto the sample but can reject the reflected light from the back surface of the substrate. This ellipsometer is suitable for measuring MURA of the surface of sample with high sensitivity.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.432-437
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• 1999

We have fabricated an in situ ellipsometer operating at He-Ne wavelength. It can be applied to the real-time, in-situ tracking of the ellisometric change which occurs during various sample treatments. As a rotating analyzer type, all optical elements and related parts are designed to share a common hollow-axis configuration, and hence the ellipsometer is compact in shape and simple in design. It is mountable on the spare ports of vacuum chamber with ease. Using this ellipsometer, we observed the effective density variation of previously grown $TiO_2$ thin films by using electron beam evaporation. The packing density of the as-grown film was 82%. When exposed to atomsphere, the micro-void of the film was filled with water vapor. This water-filled $TiO_2$ thin film was subject to heating/cooling cycles in vacuum and the ellipsometric variation versus temperature and cycling number was measured in real time using this in situ He-Ne ellipsometer.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.23-26
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• 2003

The general users find difficulties in using ellipsometers. Thus, the object of this study is to construct an ellipsometer with simple operation principle. We developed an ellipsometer which does not require alignment and calibration before measuring sample. A basis structure model after rotating a compensator spectroscopic ellipsometry, the fixed incidence angle at $70^{\circ}$. This ellipsometer does not demand calibration, because the plane of incidence is not changed due to the novel sample holder structure. The results for various standard samples were compared with those from conventional RCSE to test the performance of this instrument. Also repeated measurements were performed to test the precision of the calibration coefficient in a plane of incidence fixed.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.38-39
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• 2002

Spectroscopic ellipsometer(SE)는 박막의 두께, 굴절률, 흡수율, 에너지 갭, 결정상태, 밀도, 표면 및 계면의 거칠기 등에 관한 유용한 정보들을 제공한다. (1-3) SE는 빛을 탐침으로 사용하기 때문에 비파괴적이고 비접촉식 박막물성 측정방법이며 편광변화에 대한 상대적 물리량을 측정함으로써 정밀도와 재연성이 매우 높은 장점들을 갖고 있다. 따라서 SE는 반도체 메모리 소자, 평판 디스플레이, DVD와 CD와 같은 데이터 저장장치 등을 제작하는 공정에서 박막에 관련된 공정계측장비로 사용되고 있다. 특히, 최근의 차세대 반도체 소자 개발에 관한 연구 등(4-6)에서는 수 nm 두께의 다양한 초박막들에 관한 물성연구가 주관심사이기 때문에 최고의 성능을 갖는 계측장비와 기술이 요구되고 있다. 따라서 본 연구에서는 그림과 같은 편광자(polarizer)-시료(sample)-검광자(analyzer)로 구성된 PSA구조의 표준기용 rotating-analyzer SE를 제작하게 되었다. 현재까지 개발된 ellipsometer의 수많은 종류들 중에서 null 형, rotating element 형, 그리고 phase modulation 형이 가장 많이 사용되고 있다. 여기서 element란 polarizer, analyzer, 또는 compensator와 같은 광 부품들을 지칭하는데 이 중 하나 또는 둘을 회전시키기 때문에 그 종류 또한 매우 많다. 이들 중에서 회전검광자형 ellipsometer는 입사각 정렬이 우수하고, 파장에 무관한 편광기만 사용하므로 비교적 넓은 광량자 에너지영역에서 정확도 높은 데이터를 얻을 수 있기 때문에 박막 상수의 정밀측정에 가장 적합하다. 특히, 본 연구에서 제작된 ellipsometer에는 간섭계 장치, polarizer tracking,(2) zone average,(1) 그리고 low-pass filter 등을 사용함으로써 측정오차를 최대한 줄이는 노력을 하였다.

• Proceedings of the Optical Society of Korea Conference
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• 1990.07a
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• pp.45-58
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• 1990

회전 편광자 영의 Spectroscople Ellipsometer를 제작하였다. 각 부품의 미소결함에 의한 오차를 추정하고 이들 각 부품의 미소결함이 Ellipsometric 상수들에 미치는 영향을 보정하여 정확도를 향상시키는 관련표현들을 유도하였다. Straight through operation에 대한 성능 평가 결과 파장 대역 400nm-600nm 내에서 tan$\psi$ 와 cos$\Delta$ 의 편차는 0.2% 내외로 만족할 만한 것으로 판단되었다. 광학 박막을 중심으로 Spectroscopic Ellipsomter를 사용한 연구에 대하여 실험예를 중심으로 논의하였다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.18-22
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• 2003

일반사용자들은 ellipsometer를 사용이 어려운 장비로 인식하고 있다. 본 연구는 초보자들이 손쉽게 사용할 수 있는 ellipsometer를 제작하는데 목적이 있다. 시편을 측정하기 전에 반드시 해야 할 과정인 alignment와 calibration을 하지 않고 측정할 수 있도록 제작하였다. 기본 구조는 rotating compensator spectroscopic ellipsometry를 이용하였으며 , 입사각을 70도로 고정시키고 기존의 sample holder 구조를 바꾸어 어떠한 시편을 놓아도 입사면이 변하지 알게 하여 calibration 이 요구되지 않는 ellipsometer를 개발하였다. 장비의 성능과 정밀도를 검사하기 위하여 여러 가지 표준시료를 측정하여 일반 RCSE와 측정결과를 비교하였다. 또한 고정된 입사면의 calibration값의 신뢰도를 검사하기 위하여 반복적으로 측정할 때마다 시편을 재배치하여 실험하였다.

• Korean Journal of Optics and Photonics
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• v.33 no.2
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• pp.59-66
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• 2022

A free-form Mueller matrix ellipsometer (MME) based on independent control of the azimuthal angle of each polarizing element is introduced. The azimuthal angles of the polarizer and the matching compensator which generate the optimum Stokes vectors of an incident beam are investigated for the polarization state generator, where the spectral responses of the retardation angle and transmittance ratio of a nonideal compensator are taken into account. Similarly, the azimuthal angles of the analyzer and the corresponding compensator are investigated for the polarization-state detector, to unambiguously determine the Stokes vector of the outcoming beam from the sample, and explicit expressions for the Stokes elements are derived. Since the suggested technique enables one to utilize a nonideal quarter-wave plate as the compensator for an MME, it will contribute to the construction and application of a Mueller matrix spectroscopic ellipsometer (MMSE) operating over a wide spectral range from deep ultra-violet to near infrared.

• Korean Journal of Optics and Photonics
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• v.32 no.4
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• pp.172-179
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• 2021

A near-normal-incidence ellipsometer (NNIE) is suggested as an optical critical dimension (OCD) measurement system that is highly sensitive to the bottom defect of a sample with high-aspect-ratio structured patterns. Incident light passes through a polarizer and a phase retarder in sequence, and the reflected light from the sample also passes through them, but in reverse order. The operating principle of this NNIE, where a single polarizer and a single phase retarder are shared by the incident and reflected light, is studied, and a method to determine the ellipsometric constants from the measured intensities at proper combinations of the azimuthal angles of polarizer and retarder is presented.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.1-4
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• 2003

We have developed a rotating compensator spectroscopic ellipsometer (RCSE). As the ellipsometry measures a change in the polarization state of a light wave upon non-normal reflection from surface, the degree of sensitivity is enhanced greatly through the detection of relative phase change. RCSE acquires additional information from the non-ideal surface of sample and operates over the photon energy range from 1.5 to 4.5 eV. We applied RCSE to measure the optical properties of films and the line-width of patterned PR films on crystalline silicon.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.129-135
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• 1995

SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.