• Journal of the Optical Society of Korea
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• v.18 no.6
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• pp.732-738
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• 2014

Combined optical simulation of the ray-tracing technique and the finite difference time domain method was used to investigate the effect of the emitter orientation and the photonic crystal layer on the outcoupling efficiency (OCE) of bottom-emission type organic light emitting diodes (OLEDs). The OLED with a horizontal emitter exhibited an opposite interference effect to that of one with a vertical emitter, which suggested that the OCE would be very sensitive to the emitter orientation at a fixed emitter-cathode distance. The OLED with a horizontal emitter exhibited much larger OCE than that with a vertical emitter did, which was due to the substantial difference in the radiation pattern along with the different coupling with the surface plasmon excitation. The OCE with a horizontal emitter was increased by approximately 1.3 times by inserting a photonic crystal layer between the indium tin oxide layer and the glass substrate. The present study suggested that appropriate control of the emitter orientation and its combination to other outcoupling structures could be used to enhance the OCE of OLEDs substantially.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.193-199
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• 2014

The net effect of the emitter orientation, Mie scatters, and pillow lenses on the outcoupling efficiency (OCE) of a bottom-emitting OLED having an internal photonic crystal layer was investigated by a combined optical simulation based on the finite-difference time-domain method (FDTD) and the ray-tracing technique. The simulation showed that when the emitter orientation was horizontal with respect to the OLED surface, the OCE could be increased by 54% when a photonic crystal layer was employed, while it could be improved by 86% under optimized conditions of Mie scatters and pillow lenses applied to the glass substrate. The peculiar intensity distribution of the OLED, caused by the periodic lattice structure of the photonic crystal layer, could be ameliorated by inserting Mie scatters into the glass substrate. This study suggests that conventional outcoupling structures combined with control of the emitter orientation could improve the OCE substantially.

• Journal of Positioning, Navigation, and Timing
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• v.5 no.1
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• pp.37-45
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• 2016

In this paper, design and implementation issues for a network-oriented RF emitter localization system with array antenna are discussed. For hardware, the problem of array mismatch and RF/IF channel mismatch are introduced and the calibration schemes for solving those problems are also provided. For software, it is explained how to overcome the drawback of conventional MUltiple Signal Identification and Classification (MUSIC) algorithm in a point of identifying the number of received signals and problems such as Data Association Problem and Ghost Node Problem in regard to multiple emitter localization are presented with some approaches for getting around those problems. Finally, for implementation, a criterion for arranging each of sensors and a requirement for alignment of array antenna' orientation are also given.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.