• Journal of Power Electronics
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• v.19 no.5
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• pp.1326-1335
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• 2019

Common mode (CM) chokes are a crucial part in EMI filters for mitigating the electromagnetic interference (EMI) of switched-mode power supplies (SMPS) and for meeting electromagnetic compatibility standards. However, the parasitic capacitances of a CM choke deteriorate its high frequency filtering performance, which results in increases in the design cycle and cost of EMI filters. Therefore, this paper introduces a negative capacitance generated by a negative impedance converter (NIC) to cancel the influence of equivalent parallel capacitance (EPC). In this paper, based on a CM choke equivalent circuit, the EPCs of CM choke windings are accurately calculated by measuring their impedance. The negative capacitance is designed quantitatively and the EPC cancellation mechanisms are analyzed. The impedance of the CM choke in parallel with negative capacitances is tested and compared with the original CM choke using an impedance analyzer. Moreover, a CL type CM filter is added to a fabricated NIC prototype, and the insertion loss of the prototype is measured to verify the cancellation effect. The prototype is applied to a power converter to test the CM conducted noise. Both small signal and EMI measurement results show that the proposed technique can effectively cancel the EPCs and improve the CM filter's high frequency filtering performance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.11
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• pp.577-582
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• 2004

In this paper, lumped equivalent circuits for a conventional parallel directional coupler are proposed. This equivalent circuits only have self inductance and self capacitance, so we can design exact lumped equivalent circuit. The equivalent circuit and design formula for the presented lumped element coupler is derived based on the even- and odd-mode properties of parallel-coupled line. By using the derived design formula, we have designed the 3dB and 4.7dB MMIC couplers at the center frequency of 3.4GHz and 5.6GHz respectively. Measurements for the designed MMIC directional couplers show at 4dB and 5.2dB-coupling value at the center frequency of 3.4GHz and 5.6GHz. Excellent agreements between simulation results and measurement results on the designed directional couplers show the validity of this paper

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2166-2172
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• 2007

In this study a low-signal equivalent circuit based on the Double Schottky Barrier model is proposed for ZnO-based varistor. Since pin-lead inductance and stray capacitance are considered in pin-lead type ZnO varistor these inductance and capacitance could be removed from the experimental dielectric data of the varistor. According to the equivalent circuit simulation results the higher the varistor-voltage of varistor sample the capacitance of dielectric layer is larger, and the capacitances of semiconducting layer and depletion layer are smaller, while the parallel resistances of semiconducting layer and depletion layer are more larger values. Spectra of the dielectric loss factor $tan{\delta}$ show 2 peaks in low frequency and high frequency regions respectively. The low-frequency peak is due to the relaxation by deep donors and the high-frequency peak is due to the relaxation by shallow donors. Above results are well consistent with the theoretical mechanism of ZnO varistor.

• Journal of Power Electronics
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• v.7 no.1
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• pp.38-43
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• 2007

An External Electrode Fluorescent Lamp (EEFL) has longer lifespan, higher power efficiency and higher luminance than a Cold Cathode Fluorescent Lamp (CCFL). Moreover, it is easy to drive them in parallel. Therefore, the EEFL is expected to quickly replace the CCFL in LCD backlight systems. However, the EEFL has more complex characteristics than the CCFL with a resistive component, because it has both a resistive component by plasma and a capacitive component by external electrode. In this paper, values of resistance and capacitance are measured at several power levels and at several operating frequencies. They are expressed by a numeral formula based on a linear approximation that represents the equivalent resistance and capacitance as a function of power. Then we made block diagram of the equivalent circuit model using numerical expressions. Simulation waveforms and experimental results are presented to verify the feasibility of the equivalent model.

• Agricultural and Biosystems Engineering
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• v.1 no.1
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• pp.30-37
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• 2000

Wet porous media representing agronomic soil that contains variable water content with variable electrolyte concentration was measured to study the shape of the curves of the electric double layer capacitance versus frequency (from 10 KHz to 10 MHz. This was done in an attempt to find the lowest practical operating frequency for developing low cost dielectric constant soil moisture probes. Cellulose sponge was used as the porous media. A high frequency electronic bridge circuit was developed for measuring the equivalent network parallel resistance and capacitance of porous media. It appears that the effects of the electric double layer component of the total parallel network capacitance essentially disappear at operating frequencies greater than approximately 25 MHz at low electrolyte concentrations but are still important at 50 MHz at higher concentrations. At these frequencies, the double layer capacitance masks the diffusion region capacitance where true water content capacitance values reside. The general shape of the curve of volumetric water content versus porous media dielectric constant is presented, with an empirical equation representing data for this type of curve. It was concluded that the lowest frequency where dielectric constant values which represent true water content information will most likely be found is between 30 and 50 MHz at low electrolyte concentrations but may be above 50 MHz when the total electrolyte concentration is near the upper level required for most mesophyte plant nutrition.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.131-134
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• 2007

An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

• Journal of Power Electronics
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• v.17 no.1
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• pp.305-313
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• 2017

A novel interference isolation method is proposed by using several designed coils in capacitive power transfer systems as isolation impedances. For each designed coil, its stray parameters such as the inter-turn capacitance, coil resistance and capacitance between the coil and the core, etc. are taken into account. An equivalent circuit model of the designed coil is established. According to this equivalent circuit, the impedance characteristic of the coil is calculated. In addition, the maximum impedance point and the corresponding excitation frequency of the coil are obtained. Based on this analysis, six designed coils are adopted to isolate the interference from power delivery. The proposed method is verified through experiments with a power carrier frequency of 1MHz and a data carrier frequency of 8.7MHz. The power and data are transferred parrallelly with a data carrier attenuation lower than -5dB and a power attenuation on the sensing resistor higher than -45dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1036-1043
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• 2003

In this paper, novel lumped equivalent circuits for a conventional parallel directional coupler are proposed. This novel equivalent circuits only have self inductance and self capacitance, so we can design exact lumped equivalent circuit. The equivalent circuit and design formula for the presented lumped element coupler is derived based on the even- and odd-mode properties of a parallel-coupled line. By using the derived design formula, we have designed the 3 dB and 10 dB lumped element directional couplers at the center frequency of 100 MHz and 2 GHz, respectively a chip type directional coupler has been designed with multilayer configurations by employing commercial EM simulator. Designed chip-type directional couplers have a 3 dB-coupling value at the center frequency of 2 GHz and fabricated lumped directional coupler on fr4 organic substrate has a 3 dB, 10 dB-coupling values at the center frequency of 100 MHz. Excellent agreements between simulation results and measurement results on the designed directional couplers show the validity of this paper. Furthermore, in order to adapt to multi-layer process such as Low Temperature Cofired Ceramic (LTCC), chip-type lumped element couplers have been designed by using this method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.438-439
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• 2006

We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.119-120
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• 2006

The impedance spectroscopy is one of the effective ways to understand the electrical properties of organic light emitting diodes. The frequency-dependant properties of small molecule based OLEDs have been studied. The equivalent circuit of single-layer device is composed of contact resistance ($R_c$), bulk resistance ($R_p$) and bulk capacitance ($C_p$). The equivalent circuit of double layer device is composed of two parallel circuits connected in series, each of which is a parallel resistor and a capacitor. We have fabricated a double layer device indium-rio-oxide (ITO, anode), N,NV -diphenyl- N,NV -bis(3-methylphenyI)-1,1V -diphenyl-4,4V-diamine (TPD, hole-transporting layer), tris-(8-hydroxyquinoline) aluminum (Alq3, emitting layer), and aluminum (AI, cathode) and two single layer devices ([TO/ Alq3/ AI, ITO/TPD/AI).