• 제목/요약/키워드: Etching glass

검색결과 256건 처리시간 0.021초

The durability of LCD glass substrate in dry etching

  • Yanase, Tomoki;Miwa, Shinkichi;Yamazaki, Hiroki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.857-859
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    • 2007
  • Durability of LCD glass, OA-10 and OA-21, to $SiCl_4$ and $SF_6$ gases was investigated. Reaction products are generated on the glass surface. The reaction products are reduced by changing the etching conditions. the durability of OA-10 and OA-21 to the dry etching gases is comparable.

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감광성 결정화유리를 이용한 미세 구조물 제조에 대한 연구 (The Fabrication of Micro-framework Using Photosensitive Glass-ceramics)

  • 김형준;이상훈;연석주;최성철
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.82-89
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    • 2000
  • In lithium silicate photosensitive glass-ceramics, the relationship between lithography time and crystallization, and the effect of addition of mineral acid in etching rate and pattern shape were investigated. Irradiation times for micropatterning were less than 5 minutes in which Ce3+ ions in glass were changed rapidly to Ce4+ with ultra violet light. Overexposure to ultra brought about blot of pattern by diffiraction of light. Addition of mineral acid to HF enhanced etching rate as compared with HF solution only. The addition of H2SO4 especially increased the etching rate by 70%. But the mixed solution also increased the etching rate of the noncrystallized portion of the glass and this resulted in heavy etching. Etching with ultrasonic wave showed higher etching rate than that with the static or fluid method.

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석탄바닥재가 포함된 유리의 결정화 특성에 미치는 HF 처리 효과 (Effect of HF Treatment on the Crystallization Behavior of the Glass Containing Coal Bottom Ashes)

  • 조시내;강승구
    • 한국세라믹학회지
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    • 제48권1호
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    • pp.80-85
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    • 2011
  • The crystallization behavior and microstructural change of the glass-ceramics were analyzed as a function of concentration and etching time of the HF solution in order to enhance the degree of crystallinity induced by heterogeneous nucleation of glass of bottom ash containing 15 wt% $Li_2O$. The nucleation site seemed to be generated where the Si ion was eluted. The main crystal phases in the glass-ceramics fabricated in this study were $\beta$-spodumene and $Li_2SiO_3$. The specimens etched with HF of 0.5 vol% within 0~60 seconds showed increased crystalline peak intensities in XRD pattern with etching time compared to no-etched one. Also the crystal size and crystal occupancy in the glass matrix observed by SEM were increased with etching time. For the glass-ceramics etched with 1.0 and 2.0 vol% HF solution, the etching time over 10 s was not effective to increase the crystallinity. From this study, it was found that the glass-ceramics with the higher crystallinity could be obtained by HF-etching followed by heat treatment process, even though the nucleating agent or 2-stages thermal treatment process were not used.

물리·화학적 혼합 식각 공정에 의해 제조된 알루미노실리케이트 유리의 표면 형상과 광학 특성 (Surface Morphology and Optical Properties of Aluminosilicate Glass Manufactured by Physical and Chemical Etching Process)

  • 김남혁;손정일;김광수
    • 한국재료학회지
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    • 제27권9호
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    • pp.501-506
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    • 2017
  • Surface morphology and optical properties such as transmittance and haze effect of glass etched by physical and chemical etching processes were investigated. The physical etching process was carried out by pen type sandblasting process with $15{\sim}20{\mu}m$ dia. of $Al_2O_3$ media; the chemical etching process was conducted using HF-based mixed etchant. Sandblasting was performed in terms of variables such as the distance of 8 cm between the gun nozzle and the glass substrate, the fixed air pressure of 0.5bar, and the constant speed control of the specimen stage. The chemical etching process was conducted with mixed etching solution prepared by combination of BHF (Buffered Hydrofluoric Acid), HCl, and distilled water. The morphology of the glass surface after sandblasting process displayed sharp collision vestiges with nonuniform shapes that could initiate fractures. The haze values of the sandblasted glass were quantitatively acceptable. However, based on visual observation, the desirable Anti-Glare effect was not achieved. On the other hand, irregularly shaped and sharp vestiges transformed into enlarged and smooth micro-spherical craters with the subsequent chemical etching process. The curvature of the spherical crater increased distinctly by 60 minutes and decreased gradually with increasing etching time. Further, the spherical craters with reduced curvature were uniformly distributed over the etched glass surface. The haze value increased sharply up to 55 % and the transmittance decreased by 90 % at 60 minutes of etching time. The ideal haze value range of 3~7 % and transmittance value range of above 90 % were achieved in the period of 240 to 720 minutes of etching time for the selected concentration of the chemical etchant.

저불산 불소계 화합물 수용액을 이용한 글라스 박판화 (Glass Thinning by Fluoride Based Compounds Solution with Low Hydrofluoric acid Concentration)

  • 김호태;강동구;김진배
    • 공업화학
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    • 제20권5호
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    • pp.557-560
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    • 2009
  • 본 연구에서는 글라스를 $100{\mu}m$ 이하의 두께로 박판화하기 위한 새로운 습식 에칭방법 및 에칭 용액을 검토하였다. $NH_4F$ 또는 $NH_4HF_2$를 주성분으로 황산 또는 질산을 첨가한 경우 에칭 용액의 불산 함유량을 저감하는 데에 효과가 있었다. 혼산 용액의 조성과 온도의 영향을 검토하였으며, 음이온계 계면활성제의 첨가는 에칭반응에 의해 생성되는 슬러지의 부착을 억제해주는 효과가 있었다. 수류 발생부를 가지는 새로운 파일럿 장비를 사용하여 상용 무알칼리 글라스와 소다라임 글라스의 에칭 실험을 실시하였다. $640{\mu}m$ 두께의 무알칼리 글라스를 $45{\mu}m$ 두께로 $500{\mu}m$ 두께의 소다라임 글라스를 $100{\mu}m$ 두께로 박판화하였으며, 에칭 후의 표면 조도는 $0.01{\sim}0.02{\mu}m$를 유지하였다.

유리기판 박막화를 위한 습식공정에서 식각액 성분의 영향 (Effects of Ingredients of Wet Etchant on Glass Slimming Process)

  • 신영식;이원규
    • Korean Chemical Engineering Research
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    • 제58권3호
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    • pp.474-479
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    • 2020
  • 유리기판의 박막화를 위한 식각액을 제조하였고, 습식 식각액의 주성분으로 HF를 사용하였다. HF를 기본으로 한 식각액에 HCl, HNO3, H2SO4와 같은 강산과 구연산과 같은 카르복실산 그리고 여러 종류의 아미노산을 첨가물로 각각 사용한 식각액으로 유리의 식각속도와 표면형상의 변화를 측정하였다. 강산의 종류와 상관없이 첨가량이 증가함에 따라 선형적으로 유리의 식각속도가 증가하였으며 유리표면의 슬러지 제거효과도 나타내었다. HCl이 함유된 식각액이 식각속도의 증가율과 슬러지 제거 효과에서 다른 강산보다 효율적인 결과를 보였다. 카르복실산의 첨가는 식각속도에 영향을 크게 주지 않으나 슬러지 제거효과를 보였다. 하지만 아미노산을 첨가한 경우에는 식각속도의 변화와 슬러지 제거 효과가 크지 않았다.

Plasma etching behavior of RE-Si-Al-O glass (RE: Y, La, Gd)

  • 이정기;황성진;이성민;김형순
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.49.1-49.1
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    • 2010
  • The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

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The Influence of Dry Etching Process by Charged Static Electricity on LCD Glass

  • Kim, Song-Kwan;Yun, Hae-Sang;Hong, Mun-Pyo;Park, Sun-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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    • pp.77-78
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    • 2000
  • We verified the charged static electricity on LCD glass influences upon the etching uniformity of dry etching process by plasma. In the TFT-LCD manufacturing process, we mainly paid attention to eliminate the static electricity for TFT reliability. The static electricity caused the serious ununiformity of etching surface profile and etching rate in the dry etch process. Through our experiment on the made static electricity from -200V to -1000V, it was confirmed that the static electricity on LCD glass caused the etching rate variation of $1.5%{\sim}15%$. We recommend the etching process equipment for LCD manufacturing have to establish the soft X-ray exposure module system for eliminating the static electricity inside the loading and unloading chamber.

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산 에칭에 의한 BaO-B2O3-ZnO계 유리조성물의 용출 현상 (Dissolution Phenomenon in BaO-B2O3-ZnO Glass System by Acid Etching)

  • 김재명;홍경준;김남석;김형순
    • 한국세라믹학회지
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    • 제43권1호
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    • pp.33-37
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    • 2006
  • For producing the fine ribs structure of plasma display panel, the metal ions of barrier materials during the etching process should be understood on the etching mechanism with etching conditions. Etching was done on bulk glasses of the $BaO_B_2O_3-ZnO$ system with $HNO_3$ solution at $40^{\circ}C$. The surface structure of glasses and ion dissolution were analyzed by ICP (Inductive Coupled Plasma measurement). The structure and surface of the etched bulk glass were investigated by using scanning electron microscopy and nanoindenter. As a result, Ba (3-35 ppm/min) and Zn (2-27 ppm/min) ions as major components were leached in the solution and the leached layers were found to be phosphor-rich surface layers. A decrease of the bridge oxygen and relative increase of non bridge oxygen in the etched glass were found by X-ray photoelectron spectroscopy.

플라즈마 디스플레이 패널의 격벽형성의 에칭 메커니즘 (Etching Mechanism of Barrier Ribs in Plasma Display Panel)

  • 정유진;전재삼;성우경;김형순
    • 반도체디스플레이기술학회지
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    • 제5권3호
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    • pp.33-36
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    • 2006
  • To produce a fine structure with uniform surface of barrier ribs in PDP, acid etching process has been used in manufacture process. It is necessary to understand the mechanism of etching, particularly on the interface of ceramic fillers and matrix glass. We investigated the effect of ceramic fillers (ZnO, $Al_2O_3$) on the microstructure of borate glass system to find an etching mechanism of barrier ribs. The barrier ribs was etched with several steps, dissolving a small amount of residual glass, taking out alumina fillers, and removing a cluster type of ZnO fillers and glass matrix.

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