• Membrane Journal
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• v.23 no.3
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• pp.189-203
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• 2013

F-gases, gases containing fluorine such as perfluorocarbons (PFCs), sulfurhexafluoride ($SF_6$), nitrogen trifluoride ($NF_3$) are known to have green house effects. Although the net emission rates of gases containing fluorine are much lower than those of $CO_2$, their contribution to global warming cannot be ignored because of their extremely high global warming potential (GWP). F-gases mainly have been used for a variaty of applications in the semiconductor/LCD processes and in the electric power distribution industry of the national key industry. One of practical solutions of controlling the emission rates of F-gases is to reuse by separation and recovery of F-gases of low concentration from the gases mixtures with nitrogen or air. This work investigates some methods for F-gases recovery and separation around the membrane-based process.

• Journal of the Korean Society of Safety
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• v.6 no.1
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• pp.26-30
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• 1991

Flammability, and released toxic halogen gases during combustion about two kinds of flame-retardant flexible foam(F.R. flexible PV foam) were investigated. One of the above was F.R. flexible PU foam with the containment of halogen and the other was manufactured with pure flexible PU foam in aqueous solution of alumina trihydrate(ATH) and dried 4 hours at 10$0^{\circ}C$. Flammability by L.O.I and UL94 HF-1 of the two materials were similarly shown. And combustion gases were analyzed with GC-Mass. HCI, CI$_2$ and HF were detected at both halogen being contained F.R. flexible PU foam and ATH dolng one The reason, to find halogen gases from burning ATH-containing F, R. flexible PU foam which wasn't used for any halogenated F.R., could be considered as by using trichlorofluoromethane with blowing agent to make PU foam. The relative quanity of relesed halogen gases of F.R. flexible PU foam with the containment of halogen had been indicated tree times HCI and CI$_2$, two times HF than ATH containing, respectively.

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• Fire Science and Engineering
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• v.20 no.2 s.62
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• pp.1-7
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• 2006

The aim of the research is to estimate the effect of smoke and combustion gases on humane body indirectly through measuring the toxicity of those. For this purpose, the toxic index of smoke and combustion gases was investigated by smoke hazard test and analysis of smoke which were conducted by KS F 2271 and NES 713 method respectively. It i s proved by KS F 2271 method that PASCON trough is suitable to the testing standard of interior material and construction of building. In addition, it is identified by NES 713 method that combustion gases occurring in PASCON product were only carbon dioxide and carbon monoxide, and the smoke index of those was 0.944. This value means that the hazard effect of smoke gases on humane ! body can possibly happens when exposed to the smoke gases for more than 30 min. In aspect of the domestic situation that have not regulated the hazard estimation and the emissions of smoke when the flame retarding ability of the products have been requested, the toxic indexes of PASCON products are comparatively low.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.2
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• pp.197-201
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• 2010

$SF_6$ gas would be used in power transformer, GIS (Gas insulated switchgear) and so on because of its electrically superior insulation and chemically stable structure. Recently, the reduction of $SF_6$ is required to avoid global warming and the researches on the dilution of $SF_6$ with other gases have been carried out. $SF_6$ mixture gases with $N_2$ and $C_xF_y$ have drawn attention to the synergy effect. However, in order to understand the mechanism of the synergy effect, it is important to analyze and evaluate properties of mixture gases quantitatively. In this paper, we investigated the mechanism of synergy effect from electron collision processes and electron energy distribution by solving Boltzmann equation with propagator method. Three kinds of gases for dilution of $SF_6$ ($SF_6/N_2$, $SF_6/CF$4 and $SF_6/C_4F_8$) are considered in this simulation. On the properties of $SF_6/N_2$ mixture gas, the variation of reduced electric field was shown highly within 0%~40% mixtures of $SF_6$. And the more low-level electron energy has been distributed, the higher insulation capability has appeared.

• Journal of the Korean Society of Safety
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• v.9 no.3
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• pp.53-59
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• 1994

Hydrogen(H$_2$) is used in the semiconductor industries, and some oxidizing gases such as fluoride(F$_2$) and chlorine trifluoride(CIF$_3$) are also used. As F$_2$and CIF$_3$are highly oxidizing gases, it were supposed to react vigorously with H$_2$. In this study, the flammability limit of F$_2$/$H_2$/Ar and CIF$_3$/$H_2$/Ar mixtures were investigated experimentally. As a result, it was found that the diluted F$_2$gas could be spontaneously ignited as compared to CIF$_3$mixture gas while being mixed with the diluted H$_2$gas. However, CIF$_3$diluted gas was not able to ignite spontaneously except for an electric spark. And the combustion characteristics and reaction kinetics were shown at the different diluted gases by the flammability diagram analyses between the F$_2$/$H_2$/Ar and CIF$_3$/$H_2$/Ar.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.442-450
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• 1999

In this paper, we have fabricated Langmuir-Blodgett(LB) films by LB technique and evaluated the deposited status of LB films by UV-vis absorbance. It was found thatthe thickness of LB films per a layer are $27~30[{\AA}]$ by ellipsometry. The responeses between LB films and organic gases were investigated using by I-V characteristics of LB films and F-R diagram of quartz crystal. The response orders between LB films and organic gases observed by I-V characteristics were as following ; chloroform, methanol, acetone and ethanol in the order of their short chain length. The response mechanism between LB films and organic gases observed by F-R diagram of quartz crystal could be modeled on adsorption at surface, penetration, desorption at surface and inside.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2545-2552
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• 2018

$SF_6$ has been widely used in high voltage power equipment, such as gas insulated switchgear (GIS) and gas insulated transmission line (GIL), because of its excellent insulation and arc extinguishing performance. However, $SF_6$ faces two environmental problems: greenhouse effect and high liquefaction temperature. Therefore, to find the $SF_6$ substitute gases has become a research hotspot in recent years. In this paper, the liquefaction characteristics of $SF_6$ substitute gases were studied. Peng-Robinson equation of state with the van der Waals mixing rule (PR-vdW model) was used to calculate the dew point temperature of the binary gas mixtures, with $SF_6$, $C_3F_8$, $c-C_4F_8$, $CF_3I$ or $C_4F_7N$ as the insulating gas and $N_2$ or $CO_2$ as the buffer gas. The sequence of the dew point temperatures of the binary gas mixtures under the same pressure and composition ratio was obtained. $SF_6/N_2$ < $SF_6/CO_2$ < $C_3F_8/N_2$ < $C_3F_8/CO_2$ < $CF_3I/N_2$ < $CF_3I/CO_2$ < $c-C_4F_8/N_2$ < $C_4F_7N/N_2$ < $c-C_4F_8/CO_2$ < $C_4F_7N/CO_2$. $SF_6/N_2$ gas mixture showed the best temperature adaptability and $C_4F_7N/CO_2$ gas mixture showed the worst temperature adaptability. Furthermore, the dew point temperatures of the $SF_6$ substitute gases at different pressures and the upper limits of the insulating gas mole fraction at $-30^{\circ}C$, $-20^{\circ}C$ and $-10^{\circ}C$ were obtained. The results would supply sufficient data support for GIS/GIL operators and researchers.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.21-23
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• 2005

The electron transport coefficients, the electron drift velocity W, the longitudinal diffusion coefficient $ND_L$ in $C_{3}F_{8}-Ar$ mixture gases were measured by Double shutter drift tube and calculated by multi-term approximation of the Boltzmann equation over the wide E/N range from 0.03 to 100 Td. And an inelastic collision cross sections for $C_{3}F_{8}$ molecular gas were redetermined for quantitative characteristic analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.