• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.487-488
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• 2006

In this paper, we analyzed the FBGA packages operating in high speeds and high frequency rates for DRAM. Using 3D simulations, we could extract s-parameters of packages. We realize that the proposed FBGA package does not operate properly at 3Gbps bacause the FBGA package have delta-I noise($V_{{\Delta}I-peak}$) of 132.0mV and crosstalk of 300mV, which is 25% of the operating clock level.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.31-39
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• 2004

This paper illustrates the noise characteristics under chip's core operations according to types of packages and modules for DDR DRAM For analyzing this, the impedance profiles and power noises are analyzed with DRAM chips having commercial TSOP package and commercial FBGA package on TSOP-based DIMM and FBGA-based DIMH In controversy with common concepts, we find that the noise-isolation characteristics of FBGA package are more weak and sensitive on transferred noises than those of the TSOP package. In addition, the simulated results show that the decoupling capacitor locations of modules are more important to control the self and transfer noise characteristics than the lead inductance of the packages. Therefore, satisfying the target spec of the noise suppression and isolation can be achieved through the design of power distribution systems only with considering not only the package types but also the whole module system.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.7-15
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• 2012

Semiconductor packages are increasingly moving toward miniaturization, lighter and multi-functions for mobile application, which requires highly integrated multi-stack package. To meet the industrial demand, the package and silicon chip become thinner, and ultra-thin packages will show serious reliability problems such as warpage, crack and other failures. These problems are mainly caused by the mismatch of various package materials and geometric dimensions. In this study we perform the numerical analysis of the warpage deformation and thermal stress of 4-layer stacked FBGA package after EMC molding and reflow process, respectively. After EMC molding and reflow process, the package exhibits the different warpage characteristics due to the temperature-dependent material properties. Key material properties which affect the warpage of package are investigated such as the elastic moduli and CTEs of EMC and PCB. It is found that CTE of EMC material is the dominant factor which controls the warpage. The results of RSM optimization of the material properties demonstrate that warpage can be reduced by $28{\mu}m$. As the silicon die becomes thinner, the maximum stress of each die is increased. In particular, the stress of the top die is substantially increased at the outer edge of the die. This stress concentration will lead to the failure of the package. Therefore, proper selection of package material and structural design are essential for the ultra-thin die packages.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2010.05a
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• pp.572-573
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• 2010

Vibration analysis of Fine-pitch Ball Grid Array (FBGA) packages mounted on a Printed Circuit Board (PCB) subjected to harmonic excitation is performed by using finite element method (FEM). A finite element model of a memory module is composed of three main parts, packages, simplified solder balls and bare PCB. At first, natural frequencies and mode shapes of the developed model were confirmed experimentally. Secondly, the harmonic excitation experiment for the module was carried out at the first natural frequency of the memory module, and it was verified with the simulation by using mode superposition method at a constant acceleration.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.755-756
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• 2011

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.73-76
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• 2010

A two-facet approach was used to investigate the parametric performance of functional high-speed DDR3 (Double Data Rate) DRAM (Dynamic Random Access Memory) die placed in different types of BGA (Ball Grid Array) packages: wire-bonded BGA (FBGA, Fine Ball Grid Array), flip-chip (FCBGA) and lead-bonded $microBGA^{(R)}$. In the first section, packaged live DDR3 die were tested using automatic test equipment using high-resolution shmoo plots. It was found that the best timing and voltage margin was obtained using the lead-bonded microBGA, followed by the wire-bonded FBGA with the FCBGA exhibiting the worst performance of the three types tested. In particular the flip-chip packaged devices exhibited reduced operating voltage margin. In the second part of this work a test system was designed and constructed to mimic the electrical environment of the data bus in a PC's CPU-Memory subsystem that used a single DIMM (Dual In Line Memory Module) socket in point-to-point and point-to-two-point configurations. The emulation system was used to examine signal integrity for system-level operation at speeds in excess of 6 Gb/pin/sec in order to assess the frequency extensibility of the signal-carrying path of the microBGA considered for future high-speed DRAM packaging. The analyzed signal path was driven from either end of the data bus by a GaAs laser driver capable of operation beyond 10 GHz. Eye diagrams were measured using a high speed sampling oscilloscope with a pulse generator providing a pseudo-random bit sequence stimulus for the laser drivers. The memory controller was emulated using a circuit implemented on a BGA interposer employing the laser driver while the active DRAM was modeled using the same type of laser driver mounted to the DIMM module. A custom silicon loading die was designed and fabricated and placed into the microBGA packages that were attached to an instrumented DIMM module. It was found that 6.6 Gb/sec/pin operation appears feasible in both point to point and point to two point configurations when the input capacitance is limited to 2pF.

• Journal of electromagnetic engineering and science
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• v.11 no.1
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• pp.62-69
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• 2011

This paper proposes a novel electrical characterization approach for a high-performance package system using an improved Partial Element Equivalent Circuit (PEEC). As the effect of interconnects becomes a pivotal factor for the performance of high-speed electronic systems, there is a great demand for an accurate equivalent model for interconnects. In particular, an equivalent model of interconnects is established in this paper for the Fine-Pitch Ball Grid Array (FBGA) package using the improved PEEC method. Based on the equivalent model, electrical characteristics are analyzed; furthermore, these are verified through the measurement results of a Vector Network Analyzer (VNA).

• Journal of the Microelectronics and Packaging Society
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• v.18 no.2
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• pp.35-41
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• 2011

Recently, board level solder joint reliability performance of IC packages during drop impact becomes a great concern to semiconductor and electronic product manufacturers. The handheld electronic products are prone to being dropped during their useful service life because of their size and weight. The IC packages are susceptible to solder joint failures, induced by a combination of printed circuit board (PCB) bending and mechanical shock during impact. The board level drop testing is an effective method to characterize the solder joint reliability performance of miniature handheld products. In this paper, applying the JEDEC (JESD22-B111) standard present a finite element modeling of the FBGA. The simulation results revealed that maximum stress was located at the outermost solder ball in the PCB or IC package side, which consisted well with the location of crack initiation observed in the failure analysis after drop reliability tests.