• Journal of Radiation Protection and Research
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• v.48 no.3
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• pp.124-130
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• 2023

Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3334-3341
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• 2023

We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 × 10⁹ to 1.82 × 10¹³ n/cm². Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40%-84.89 ns, showing a faster switching.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.14-16
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• 2009

Surface driven switching of the liquid crystal bulk arising from the coupling between an applied electric field and a polarized state of a nematic liquid crystal, both localized at the substrate surface, is reported. Fast switching is demonstrated in a hybrid aligned nematic cell with a fringe electric field generated by comb-like electrode structure.

• Nuclear Engineering and Technology
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• v.49 no.1
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• pp.209-215
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• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.197-200
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• 2001

Recently, Switching time is the principal factor in a design of frerquency synthesizer for Spread-Spectrum Communications. fast switching frequency synthesizer is important to improve the channel efficiency in a Frequency Hopping Spread Spectrum (FH-SS) tranceiver. In this paper, we design the frequency synthesizer with fast switching time as fast as 1${\mu}\textrm{s}$. In frequency synthesizer design, we use the interpolated PLL method inserted memory Look-up table of DDS to reduce switching time, and have result of improved channel efficiency about 20% by applying to FH-SS Transceiver.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.39-46
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• 2009

A fast-switching current-pulse driver for light emitting diode (LED) backlight is proposed. It uses a regulated drain current mirror (RD-CM) [1] and a high-voltage NMOS transistor (HV-NMOS). It achieves the fast-response current-pulse switching by using a dynamic gain-boosting amplifier (DGB-AMP). The DGB-AMP does not discharge the large HV-NMOS gate capacitance of the RD-CM when the output current switch turns off. Therefore, it does not need to charge the HV-NMOS gate capacitance when the switch turns on. The proposed current-pulse driver achieves the fast current switching by removing the repetitive gate discharging and charging. Simulation results were verified with measurements performed on a fabricated chip using a 5V/40V 0.5um BCD process. It reduces the switching delay to 360ns from 700ns of the conventional current-pulse driver.

• IEMEK Journal of Embedded Systems and Applications
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• v.5 no.3
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• pp.128-135
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• 2010

Recently complexity of embedded software cause to be used real-time operating system (RTOS) to implement various functions in the embedded system. And also, according to requirement of complex functions in embedded systems, the number as well as complexity of tasks get increased continuously. In case that many tasks collaborated in a microprocessor, context switching time between tasks is a overhead waisting a CPU resource. Therefore the time of task context switching is an important factor that affects performance of RTOS. In this paper, we concentrate on the improvement of task context switch for reducing overhead and achieving fast response time in RTOS. To achieve these goal, we suggest multiple register files and task context switching algorithm. By reducing the context switch overhead, we try to ease scheduling and assure fast response times in multitasking environment. As a result, the context switch overhead decreased by 8~16% depend on the number of register files, and some task set which are not schedulable with single register file are schedulable due to that decrease with multiple register files.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.260-264
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• 2015

We propose a negative liquid crystal (n-LC) cell with parallel patterned electrodes for high transmittance and fast response. The proposed cell has higher transmittance and shorter response time than a conventional fringe-field switching cell using n-LCs, because the proposed cell does not have transmittance dips and does have a thinner LC layer.

• Journal of Information Display
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• v.10 no.1
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• pp.16-18
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• 2009

A three-terminal hybrid-aligned nematic liquid crystal (3T-HAN LC) cell capable of fast turn-off switching is proposed in this paper. By employing the relaxation process initiated by an electric-field pulse, a fast turn-off time of less than 1 ms can be obtained through optically hidden relaxation. A low operating voltage and high transmittance were confirmed through simulations and experiments.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.194-195
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• 2002

We report a fast-switching polymer-stabilized bend nematic (PSBN) device. The morphology study reveal a templated polymer networks captures the orientation of the field deformed nematic host.