• Journal of information and communication convergence engineering
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• v.16 no.1
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• pp.43-47
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• 2018

The existing modeling of avalanche dominated breakdown in double gate MOSFETs (DGMOSFETs) is not relevant for 10 nm gate lengths, because the avalanche mechanism does not occur when the channel length approaches the carrier scattering length. This paper focuses on the punch through mechanism to analyze the breakdown characteristics in 10 nm DGMOSFETs. The analysis is based on an analytical model for the thermionic-emission and tunneling currents, which is based on two-dimensional distributions of the electric potential, obtained from the Poisson equation, and the Wentzel-Kramers-Brillouin (WKB) approximation for the tunneling probability. The analysis shows that corresponding flat-band-voltage for fixed threshold voltage has a significant impact on the breakdown voltage. To investigate ambiguousness of number of dopants in channel, we compared breakdown voltages of high doping and undoped DGMOSFET and show undoped DGMOSFET is more realistic due to simple flat-band-voltage shift. Given that the flat-band-voltage is a process dependent parameter, the new model can be used to quantify the impact of process-parameter fluctuations on the breakdown voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.1-7
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• 2011

In this work, an analytical models for the threshold voltage and flat band voltage have been suggested and proved using 3-dimensional device simulator. The method for device design guideline and its example in nanowire junctionless transistor and example of device design of was also presented. One can find that the suggested model for threshold voltage and flat band voltage agrees with 3-dimension simulation results. The threshold voltage and flat band voltage are decreased with the increase of nanowire radius, gate oxide thickness, and channel impurity doping concentration. When the work function of gate material and the ratio of ON and OFF current is given, the device design guide line for nanowire junctionless transistor has been proposed. It is known that the device with high impurity channel concentration can be fabricated with th decreased of nanowire radius and gate oxide thickness.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.483-489
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• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.5-11
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• 2008

To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1402-1404
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• 2009

The silicon nitride films for gate dielectric were deposited by catalytic chemical vapor deposition at low temperature (${\leq}200^{\circ}C$). The mixture of $SiH_4$, $NH_3$ and $H_2$ was used as source gases. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the films were measured. The breakdown voltage and the flat band voltage shift of samples were improved by increase of the $NH_3$ contents and $H_2$ dilution ratio. The defect states were analyzed by photoluminescence (PL) spectra. As the defect states decreased, the breakdown voltage and the flat band voltage shift increased.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.333-335
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• 1997

This paper was performed to investigate the characteristic of the Pt-MIS(Metal Insulator Semiconductor) capacitor composed of the LPCVD nitride on the oxide for the hydrogen gas detection. Pt was used as catalytic metal for detecting the hydrogen gas and the flat band voltage shift was measured at various hydrogen concentration and catalytic metal thickness. We found the flat band voltage shift was proportional to the hydrogen concentration and catalytic metal thickness was little effect to the response time.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1264-1266
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• 1997

This paper reports the characteristic of tile MIS structure composed of the LPCVD nitride on the oxide for the hydrogen gas detection. Pt was used as catalytic metal for detecting the hydrogen gas and the flat band voltage shift was measured at various hydrogen concentration. We found the flat band voltage shift was proportional to the hydrogen concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.