• Title/Summary/Keyword: GOI

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Non-Overlapped Single/Double Gate SOI/GOI MOSFET for Enhanced Short Channel Immunity

  • Sharma, Sudhansh;Kumar, Pawan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.3
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    • pp.136-147
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    • 2009
  • In this paper we analyze the influence of source/drain (S/D) extension region design for minimizing short channel effects (SCEs) in 25 nm gate length single and double gate Silicon-on-Insulator (SOI) and Germanium-on-Insulator (GOI) MOSFETs. A design methodology, by evaluatingm the ratio of the effective channel length to the natural length for the different devices (single or double gate FETs) and technology (SOI or GOI), is proposed to minimize short channel effects (SCEs). The optimization of non-overlapped gate-source/drain i.e. underlap channel architecture is extremely useful to limit the degradation in SCEs caused by the high permittivity channel materials like Germanium as compared to that exhibited in Silicon based devices. Subthreshold slope and Drain Induced Barrier Lowering results show that steeper S/D gradients along with wider spacer regions are needed to suppress SCEs in GOI single/double gate devices as compared to Silicon based MOSFETs. A design criterion is developed to evaluate the minimum spacer width associated with underlap channel design to limit SCEs in SOI/GOI MOSFETs.

The Correlation between Groundwater Level and GOI with Snowmelt Effect in Ssangchun Watershed (쌍천유역의 지하수위와 융설 효과를 고려한 GOI의 상괸관계)

  • Yang, Jeong-Seok;Lim, Chang-Hwa;Park, Jae-Hyeon;Park, Chang-Kun
    • Journal of Korea Water Resources Association
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    • v.39 no.2 s.163
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    • pp.121-126
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    • 2006
  • Snowmelt effect is identified from the analysis of the relationship between precipitation and groundwater level(GWL) data and Severe drawdown of GWL is observed in drought. Groundwater dam Operation Index (GOI), which is developed for the optimal operation of groundwater dam, is calculated by taking common logarithm of the moving average(MA) of precipitation data for a certain period. The period can vary from watershed to watershed because the period is decided by picking the maximum correlation coefficient between GWL and GOI of several MAs of precipitation. For Ssangchun watershed, the correlation was the strongest when we apply 70 day MA for GOI calculation. Snowmelt effect is considered by applying the temperature change by elevation($0.5^{\circ}C$ decrease per 100m) and examining the areal distribution of the watershed by elevation. Snow event is assumed when the daily average temperature is below $0^{\circ}C$ and snowmelt is assumed when the temperature is above zero degree Celsius. Total snowmelt is assumed for the day. When the snow event is occurred the precipitation data is separated into two components, snow and rainfall. The areal distribution by elevation is used for the calculation in the separation. The correlation between GWL and GOI is higher when we consider snowmelt effect than we neglected it.

Direct Bonding of GOI Wafers with High Annealing Temperatures (높은 열처리 온도를 갖는 GOI 웨이퍼의 직접접합)

  • Byun, Young-Tae;Kim, Sun-Ho
    • Korean Journal of Materials Research
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    • v.16 no.10
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    • pp.652-655
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    • 2006
  • A direct wafer bonding process necessary for GaAs-on-insulator (GOI) fabrication with high thermal annealing temperatures was studied by using PECVD oxides between gallium arsenide and silicon wafers. In order to apply some uniform pressure on initially-bonded wafer pairs, a graphite sample holder was used for wafer bonding. Also, a tool for measuring the tensile forces was fabricated to measure the wafer bonding strengths of both initially-bonded and thermally-annealed samples. GaAs/$SiO_2$/Si wafers with 0.5-$\mu$m-thick PECVD oxides were annealed from $100^{\circ}C\;to\;600^{\circ}C$. Maximum bonding strengths of about 84 N were obtained in the annealing temperature range of $400{\sim}500^{\circ}C$. The bonded wafers were not separated up to $600^{\circ}C$. As a result, the GOI wafers with high annealing temperatures were demonstrated for the first time.

The Correlation between Groundwater Level and GOI considering Snowmelt Effect and Critical Infiltration in Ssangchun Watershed (융설효과와 한계침투량을 고려한 쌍천유역의 지하수위와 GOI의 상관관계)

  • Yang, Jeong-Seok;Park, Jae-Hyeon;Choi, Yong-Sun;Park, Chang-Kun;Jeong, Gyo-Cheol
    • Proceedings of the Korea Water Resources Association Conference
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    • 2006.05a
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    • pp.194-199
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    • 2006
  • 쌍천유역의 강수량과 지하수위의 관계를 분석한 결과 융설효과를 확인하였고 갈수기에 지하수위가 현저히 저하됨을 확인하였다. 쌍천유역의 지하수위와 GOI의 상관관계를 분석한 결과 70일 이동평균값을 이용한 GOI가 가장 높은 상관관계를 보여주었다. 융설효과를 고려하기 위해서 먼저 유역의 DEM 자료를 이용하여 100m 간격으로 고도별 면적분포를 구하고 기온이 100m당 $0.5^{\circ}C$씩 감소하는 것을 고려하여 강수사상이 발생하면 $0^{\circ}C$ 이하가 되는 고도에서는 강설사상이 발생하는 것으로 가정하였다. 이 때 고도별 면적분포에서 구해지는 면적비를 고려하여 강수사상을 강우와 강설로 나누었다. 이후에 고도를 고려한 기온이 $0^{\circ}C$ 이상인 날에 그 고도의 설적이 모두 녹는 것으로 가정하였고 강우가 발생한 것으로 처리하였다. 유역평균 일최대침투량을 알아내기 위하여 강수량자료를 일정값 이상은 고정하여 수정된 강수량자료로 70일 이동평균값을 구하고 이 값들과 지하수위와의 상관관계를 분석해 본 결과 40mm가 일최대침투량으로 가정하였을 때 가장 높은 상관관계를 보여주었다. 쌍천유역의 경우 40mm가 한계침투량이다. 이렇게 수정된 강수자료를 이용하여 이동평균을 구하여 지하수위와의 상관관계를 구해본 결과 쌍천유역의 2003년부터 2005년까지 2개년 자료에 대해서 융설을 고려했을 때 상관관계가 더 높아짐을 알 수 있고 한계침투량을 고려했을 때도 상관관계가 더 높아짐을 알 수 있으며 융설효과와 한계침투량을 동시에 고려했을 경우에 가장 높은 상관관계를 얻을 수 있었다.$2.8g/cm^3$로 가정했을 때, 경상분지의 화강암류의 압력평균값이 약 $0.73{\sim}3.16kbar$의 범위를 가졌고, 경상분지내 백악기 화강암류의 정치 깊이는 $2.6{\sim}11.4km$범위를 가졌다. 이는 경상분지 화강암류에 대해 유추된 기존의 정성적인 생각과 일치한다는 것을 알 수 있었고, 각섬석의 $Al^T$함량을 이용한 여러 경험적, 실험적인 압력계가 많은 제한점이 있지만 경상분지의 백악기 불국사화강암류에는 정성적으로 유효함을 알 수 있었다. 우리는 최종적으로 경상분지내 백악기 화강암류는 천부관입 암체이고 노출된 화강암류가 천부지각이라는 것을 알 수 있었다. 것이 아니라 낙관적 예측을 수행하는 경향이 있음을 발견할 수 있었다.원밭, 화산회밭으로 6개 유형으로 분류할 경우 각각의 분포면적은 41.9%, 23.3%, 17.5%, 13.9%, 1.1. 2.2% 이었다. 도시화 및 도로확대 등 다양한 토지이용 및 지형개변으로 과거의 토양정보가 많이 변경되었다. 그래서, 앞으로는 인공위성자료 및 항공사진을 이용하여 빠르고 쉽게 활용할 수 있는 토양조사 방법개발과 기 구축된 토양도의 수정, 보완 작업이 필요한 절실히 요구되고 있는 현실이다.브로 출시에 따른 마케팅 및 고객관리와 관련된 시사점을 논의한다.는 교합면에서 2, 3, 4군이 1군에 비해 변연적합도가 높았으며 (p < 0.05), 인접면과 치은면에서는 군간 유의차를 보이지 않았다 이번 연구를 통하여 복합레진을 간헐적 광중합시킴으로써 변연적합도가 향상될 수 있음을 알 수 있었다.시장에 비해 주가가 비교적 안정적인

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Advanced Nanoimprinting Material for Liquid Crystal Alignment

  • Gwag, Jin-Seog;Oh-e, Masahito;Yoneya, Makoto;Yokoyama, Hiroshi;Satou, H.;Itami, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.534-537
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    • 2007
  • To promote liquid crystal application of nanoimprint lithography, a polymer with new concept is proposed. The material consists of a polyamic acid for good LC alignment and an epoxy resin for good imprinting. The result of sum-frequency generation (SFG) vibrational spectroscopy proves that this material is a functionally gradient material. This material shows excellent capability as a nanoimprinting material as well as an LC alignment layer.

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A Study of the System of Official Costume of Baekche (백제 공복제도에 관한 연구)

  • Suh, Mi-Young
    • Journal of the Korean Society of Costume
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    • v.56 no.8 s.108
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    • pp.60-73
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    • 2006
  • This study analyzes the Baekche official costume system, including the dress, cap and belt systems, by relating documentary records with the results of excavations. The study shows that the system differed depending on the time. A system of dress based on official ranks was instituted during the region of King Goi in the third century. The rap amd belt systems were begun in the first half of sixth century The official costume system, as recorded in the Chinese history $Sus{\u{o}}$, included many subdivisions of cap colors, which followed belt colors. According to $Gudangs{\u{o}}$, dress and cap systems changed in the seventh century. The official costume consisted of a $jacket(j{\u{o}}gori)$, trousers(baji), and coat(po). The coat had wide sleeves and reached below knees. Its collar had straight neckline. Officials of all rank wore silk caps and belts of matching colors. Officials above sixth rank used silver flower decorations on their caps. Officials wore wide-crouch trousers and generally adjusted the hems of the trousers, but this practice stopped in the sixth century. Officials wore shoes or boots depending on occasion. From a historical viewpoint, Baekche is important for having been the first Korean kingdom to establish a government organization. The salient feature of the system of organization established in A.D. 260(the twenty-seventh year of the region of King Goi) was the application of different colors to identify different ranks.

Re-engineering Adult Education Programme-an Online Learning Curricular Perspective

  • Mathai, K.J.;Karaulia, D.S.
    • Journal of Korea Multimedia Society
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    • v.6 no.4
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    • pp.685-697
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    • 2003
  • The Web based multimedia programmes/courses are becoming widely available in recent years. Most of these courses focus on Behaviorist way of learning, which does not promote deep learning in any way. For Adults this approach further incapacitated, as it does not satisfy Andragogical needs. The search for Constructivist way of learning through the web applied to Indian conditions led to need for developing a curriculum development approach that would promote construction of knowledge through web based collaboration. This paper attempts to reengineer existing curriculum development processes and lays out a framework of‘Problem Based Online Learning (PBOL)’curriculum design. In this context, entire curriculum development life cycle is evolved and explained. This is a part of doctoral work (Ph.D), which is in progress and being undertaken by K.James Mathai, and guided of Dr.D.S.Karaulia.

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Impacts of Dopant Activation Anneal on Characteristics of Gate Electrode and Thin Gate Oxide of MOS Capacitor (불순물 활성화 열처리가 MOS 캐패시터의 게이트 전극과 산화막의 특성에 미치는 효과)

  • 조원주;김응수
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.10
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    • pp.83-90
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    • 1998
  • The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

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