• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.478.1-478.1
• /
• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1996.02a
• /
• pp.26-27
• /
• 1996

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.1 no.2
• /
• pp.111-115
• /
• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

• Journal of the Korean Vacuum Society
• /
• v.22 no.6
• /
• pp.313-320
• /
• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.207-211
• /
• 1999

$Si/Si_{1-x}Ge_x$ MODFET structures, incorporating linearly-graded buffer layers have been grown by GaS Source Molecular Beam Epitaxy. The growth temperature of the graded layers has not significantly changed the distribution of misfit dislocation. However, the surface undulation and surface defects were increased with increasing growth temperature. In $Si/Si_{1-x}Ge_x$ MODFET structures, the densities of misfit dislocations near the Si-active layers were considerably reduced in comparison with the region of graded layers. The electron mobility of $Si/Si_{1-x}Ge_x$ MODFET structure has increased with lowering the growth temperature.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1277-1279
• /
• 1994

In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

• The Korean Journal of Zoology
• /
• v.15 no.3
• /
• pp.133-147
• /
• 1972

Ultrastructures of spermiogeneis in other invertebrates were investigated by several workes (Anderson, et al., 1967; Bloch, et al., 1964; Christen, 1961; Gatenby, et al., 1959; Paik, et al., 1968; Silveira, 1964; Yasuzumi, 1957) but spermiogenesis of dragonfly has not been reported previously. Testes and vass deferentia of the Korean dragonfly, Crocothemis servilia, were used for electron microscopic study of spermiogenesis. Materials were prefixed for 1-2 hours at $3^{\circ}C$ in 1.25% glutaraldehyde buffered to pH 7.2 with 0.2M sodium cacodylate buffer. Fixed tissue was washed twice in 0.2M cacodylate buffer and was subsequently postfixed for 2 hours at $3^{\circ}C$ in 1% osmium tetroxide buffered to pH 7.2 with 0.4M sodium cacodylate buffer solution. Specimens were dehydrated in graded ethyl alcohol, and finally embedded in epoxy Epon resin. Thin sections prepared from all the blocks were doubly stained; first in uranyl acetate and then in lead citrate. All thin sectios were examined with a Hitachi HS-7S electron microscope. The results of this study were summarized as follows. 1. Along the condensation of chromatin in nucleus, the shpae of nucleus was changed from spherical shpae to ellipse and cone cell type. 2. During the elongation of nucleus and the migration of cytoplasm, the nucleus removed to the one side of spermatid and began to invaginate from the posterior portion of nucleus. 3. There are ring centrioles in invaginated portion and axial filaments derived from centriole extend to the tail through the tailward half of spermatid. 4. In the cross sections the axial filament consisted of a central sheath, a central fibril, and 9 peripheral doublets.

• Current Photovoltaic Research
• /
• v.8 no.3
• /
• pp.94-101
• /
• 2020

This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of E_g profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (J_sc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2001.02a
• /
• pp.48-49
• /
• 2001

Cryogenic technology is one of the key technologies for fusion reactor equipped with superconducting coil for plasma confinement. The KSTAR(Korea Superconducting Tokamak Advanced Research)Project is in progress since 1996. Major parameters of the KSTAR tokamak are : major radius 1.8m, minor radius 0.5m, toroidal field 3.5 Tesla and plasma current 2MA with a strongly shaped plasma cross-section and double -null diverter. Considering practical engineering constraints, the KSTAR device is designed for a pulse length of 300 sec in up-graded operation mode but in the initial configuration would provide a pulse length of 20 sec provided by the poloidal coil system in base-line operation mode. The cryogenic system is composed as follows : cold box, helium compressor system, distribution box, helium gas buffer tank, helium gas purifying system, gas recovery system, liquid helium storage dewar, current lead box, current bus line and liquid nitrogen storage tank.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.320-320
• /
• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.