• The Korean Journal of Ceramics
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• 제4권3호
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• 한국세라믹학회지
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• 제35권4호
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• pp.347-354
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• 1998

Densification and grain growth behaviors of ITO ceramics were investigated as a function of TiO2 ad-ditions. TiO2 addition led to inhibition of the grain growth and promotion of the densification of ITO ceram-ics. From the microstructure observation it was found that the crack-like voids which were formed in pure ITO specimens decreased with increase of TiO2 additon. The grain growth exponent(n) was measur-ed to be 4 for pure ITO 3 for TiO2-doped ITO specimens respectively. It was supposed that the grain boun-dary migration of pure ITO ceramics was controlled by the pores which were moved by surface diffusion. On the contrary the grain boundary migration of TiO2-doped ITO specimens was depressed by solute drag effect. The activation energies for grain growth were measured to be 1013 kJ/mol for pure ITO ceramics and 460kJ/mol for TiO2-doped ITO specimens respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1057-1060
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• 2001

By comparison of the experimental results in two systems of ZnO varistors, its appear that Sb$_2$O$_3$is the indispensable element for twinning in ZnO varistors, and the Zn$_{7}$Sb$_2$O$_{12}$ spinel acts as the nucleus to form twins. A1$_2$O$_3$is not the origin of twinning in ZnO varistor, but it was found that A1$_2$O$_3$could strengthen the twinning and form a deformation twinning by ZnA$_{12}$O$_4$-dragging and pinning effect. The inhibition ratios of grain growth and nonuniformity of two systems ZnO varistors increase with the increase of A1$_2$O$_3$content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as : twins increase the mobility viscosity of ZnO grain and grain boundary, and drag ZnO grain and liquid grain boundary during the sintering, then the grain growth is inhibited, and the microstructure becomes more uniform.orm.m.

• 한국세라믹학회지
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• 제37권2호
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• pp.152-157
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• 2000

Si3N4/SiC nanocomposite ceramics containing 5 wt%dispersed SiC particles were prepared by gas-pressure-sintering at 200$0^{\circ}C$ under nitrogen atmosphere. SiC particles with average sizes of 0.2 and 0.5${\mu}{\textrm}{m}$ were used, and the effect of the SiC particle size on the microstructure was investigated. The addition of SiC particles effectively suppressed the growth of the Si3N4 matrix grains. The effect of grain growth inhibition was higher in the nanocomposites dispersed with fine SiC. SiC particles were dispersed uniformly inside Si3N4 matrix grains and on grain boundaries. When the fine SiC particles were added, large fraction of the SiC particles was trapped inside the grains. On the other hand, when the large SiC particles were added, most of the SiC particles were located on grain boundaries. Typically, the fraction of SiC particles located at grain boundaries was higher in the specimen prepared from $\beta$-Si3N4 than in the specimen prepared from $\alpha$-Si3N4.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.62-63
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• 2006

Both densification and grain growth are driven by the reduction of the interfacial area, kinetics of which depends strongly on the interface structure. Abnormal grain coarsening in the system of singular solid/liquid interface such as WC-Co alloys was explained by the growth mechanism of 2-dimensional nucleation. Based on this concept, the marked inhibition of coarsening of WC grains by VC addition can be approached by the increase in the step free energy, which increases the barrier of 2-dimensional nucleation. The activated sintering in tungsten powders can be approached by the interface structure change induced by the addition of a small amount of nickel.

• 한국세라믹학회지
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• 제29권4호
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• pp.265-272
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• 1992

Role of CaO in the sintering of 12Ce-TZP ceramics was studied. The addition of small amounts of CaO increase the densification rate of 12Ce-TZP by altering lattice defect structure and the diffusion coefficient of the rate controlling species, namely cerium and zirconium cations. CaO also inhibits grain growth during sintering and allows the sintering process to proceed to theoretical density by maintaining a high diffusion flux of vacancies from the pores to the grain boundaries. The inhibition of grain growth is accomplished by the segregation of solute at the grain boundaries, causing a decrease in the grain boundary mobility. The segregation of calcium was revealed by AES study.

• 한국세라믹학회지
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• 제35권7호
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• pp.653-658
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• 1998

Zirconia coated NiO powders were prepared by the thermal hydrolysis of $Zro(NO_3)_2$.$6H_2O$ in a mixed solvent of alcohol and water. Amorphous zirconium hydroxide was uniformly coated on the surface of NiO powder with the thickness of 20nm. The $ZrO_2$ coating layer was crystallized to tetragonal $ZrO_2$ with the size of 40-60nm at $900^{\circ}C$. The coated NiO powder containing 15 vol% $ZrO_2$ was found to have a similar isoelectric point to that of the $ZrO_2$ The grain growth inhibition effect of the coated powders was superior to the mechanically mixed powders.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.171.1-171
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• 2000

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2000년도 춘계학술강연 및 발표대회 강연 및 발표논문 초록집
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• pp.23-24
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• 2000

• 한국결정성장학회지
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• 제6권3호
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• pp.392-398
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• 1996

$Si_{3}N_{4}$에 평균입경이 다른 SiC 분말을 0, 10, 20, 30, 40 vol% 첨가하여 고온가압소결법으로 초미립복합재료를 제조하였다. SiC의 첨가량에 따라 $Si_{3}N_{4}$의 결정립성장이 억제되어 원형의 미세한 결정립들이 많아졌다. 이러한 경향은 평균입경이 작은 SiC를 사용한 조성에서 현저하게 나타났다. 이에 따라 파괴강도와 경도는 작은 SiC를 첨가한 시편에서 높은 값을 나타냈으며, 파괴인성은 낮았다.