• Title/Summary/Keyword: Graphene imaging

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Atomic Resolution Imaging of Rotated Bilayer Graphene Sheets Using a Low kV Aberration-corrected Transmission Electron Microscope

  • Ryu, Gyeong Hee;Park, Hyo Ju;Kim, Na Yeon;Lee, Zonghoon
    • Applied Microscopy
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    • v.42 no.4
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    • pp.218-222
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    • 2012
  • Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir$\acute{e}$ pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.

Growth of Graphene on Electro-polished Copper Foil by Thermal CVD

  • Jin, Xiaozhan;Kim, Sung-Jin;Seo, Eun-Kyoung;Boo, Doo-Wan;Lee, Jung-Ah;Hwang, Chan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.410-410
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    • 2012
  • The continuous monolayer graphene was synthesized on electro-polished copper foil. Electro-polishing sticks off the coating layer of copper foil, which prevents the continuous graphene growth. The quality of continuous graphene is dependent on roughness of copper foil. Copper foil roughness could be controlled by changing polishing condition. The effects of working voltage (4-6 V) and time (30-70 sec) for electro-polishing were systematically examined. The change of surface roughness was checked with AFM.

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Dark-field Transmission Electron Microscopy Imaging Technique to Visualize the Local Structure of Two-dimensional Material; Graphene

  • Na, Min Young;Lee, Seung-Mo;Kim, Do Hyang;Chang, Hye Jung
    • Applied Microscopy
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    • v.45 no.1
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    • pp.23-31
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    • 2015
  • Dark field (DF) transmission electron microscopy image has become a popular characterization method for two-dimensional material, graphene, since it can visualize grain structure and multilayer islands, and further provide structural information such as crystal orientation relations, defects, etc. unlike other imaging tools. Here we present microstructure of graphene, particularly, using DF imaging. High-angle grain boundary formation wass observed in heat-treated chemical vapor deposition-grown graphene on the Si substrate using patch-quilted DF imaging processing, which is supposed to occur by strain around multilayer islands. Upon the crystal orientation between layers the multilayer islands were categorized into the oriented one and the twisted one, and their local structure were compared. In addition information from each diffraction spot in selected area diffraction pattern was summarized.

Graphene synthesis by chemical vapor deposition on Cu foil

  • Kim, Sung-Jin;Yoo, Kwon-Jae;Seo, E.K.;Boo, Doo-Wan;Hwang, Chan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.351-351
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    • 2011
  • Graphene has drawn great interests because of its distinctive band structure and physical properties[1]. A few of the practical applications envisioned for graphene include semiconductor applications, optoelectronics (sola cell, touch screens, liquid crystal displays), and graphene based batteries/super-capacitors [2-3]. Recent work has shown that excellent electronic properties are exhibited by large-scale ultrathin graphite films, grown by chemical vapor deposition on a polycrystalline metal and transferred to a device-compatible surface[4]. In this paper, we focussed our scope for the understanding the graphene growth at different conditions, which enables to control the growth towards the application aimed. The graphene was grown using chemical vapor deposition (CVD) with methane and hydrogen gas in vacuum furnace system. The grown graphene was characterized using a scanning electron microscope(SEM) and Raman spectroscopy. We changed the growth temperature from 900 to $1050^{\circ}C$ with various gas flow rate and composition rate. The growth condition for larger domain will be discussed.

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Thermoelectric Imaging of Epitaxial Graphene

  • Jo, Sang-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.113.2-113.2
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    • 2014
  • Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes, to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high sensitivity imaging of structural disorder on the atomic and nanometre scales. Using this imaging technique, we discovered a defect-mediated dimensional evolution of strain-response patterns in epitaxial graphene with increasing thickness.

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Wide Field Imaging Analysis of Graphene (그래핀의 대면적 이미지 특성 분석)

  • Kwon, Kanghyuk;Kim, Nayoung;Havener, Robin W.;Won, Donggwan;Cho, Seungmin;Park, Jiwoong
    • Korean Journal of Optics and Photonics
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    • v.24 no.3
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    • pp.143-147
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    • 2013
  • A Raman spectrometer is essential for analyzing the characteristics of graphene. The commercial micro-Raman spectrometer is useful for measuring small areas, but due to the small measuring area, it has limited use in industry, as a sampling measure. This paper suggests a Raman spectrometer able to get a large area image of graphene. By using this image, we can get information on defects and on the presence of graphene. Therefore, this equipment can be used for quality assessment for production of graphene.

Study on Grain Boundaries in Single-layer Graphene Using Ultrahigh Resolution TEM

  • Lee, Zong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.107-107
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    • 2012
  • Recently, large-area synthesis of high-quality but polycrystalline graphene has been advanced as a scalable route to applications including electronic devices. The presence of grain boundaries (GBs) may be detrimental on some electronic, thermal, and mechanical properties of graphene, including reduced electronic mobility, lower thermal conductivity, and reduced ultimate mechanical strength, yet on the other hand, GBs might be beneficially exploited via controlled GB engineering. The study of graphene grains and their boundary is therefore critical for a complete understanding of this interesting material and for enabling diverse applications. I present that scanning electron diffraction in STEM mode makes possible fast and direct identification of GBs. We also demonstrate that dark field TEM imaging techniques allow facile GB imaging for high-angle tilt GBs in graphene. GB mapping is systematically carried out on large-area graphene samples via these complementary techniques. The study of the detailed atomic structure at a GB in suspended graphene uses aberration-corrected atomic resolution TEM at a low kV.

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Radiolabeled 2D graphitic nanomaterials and their possibility for molecular imaging applications

  • Kang, Seok Min;Kim, Chul Hee;Kim, Dong Wook
    • Journal of Radiopharmaceuticals and Molecular Probes
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    • v.4 no.2
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    • pp.115-120
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    • 2018
  • In recent years, many researchers have attempted to make use of 2D nanoparticles as molecular imaging probes since extensive investigations proved that 2D nanoparticles in the body tends to accumulate certain lesions by enhanced permeability and retention (EPR) effect. For example, graphene and carbon nitride which have high surface area and modifiable properties showed good biocompatibility and targetability when it used as imaging probes. However, poor dispersibility in physiological mediums and its uncontrolled size limited its usage in bio-application. Therefore, oxidation process and mechanical exfoliation have been developed for overcoming these problems. In this paper, we highlight the several major methods to synthesize biocompatible 2D nanomaterials like graphene and carbon nitride especially for molecular imaging study including positron emission tomography (PET).

Frictional Anisotropy of CVD Bi-Layer Graphene Correlated with Surface Corrugated Structures

  • Park, Seonha;Choi, Mingi;Kim, Seokjun;Kim, Songkil
    • Tribology and Lubricants
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    • v.38 no.6
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    • pp.235-240
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    • 2022
  • Atomically-thin 2D nanomaterials can be easily deformed and have surface corrugations which can influence the frictional characteristics of the 2D nanomaterials. Chemical vapor deposition (CVD) graphene can be grown in a wafer scale, which is suitable as a large-area surface coating film. The CVD growth involves cooling process to room temperature, and the thermal expansion coefficients mismatch between graphene and the metallic substrate induces a compressive strain in graphene, resulting in the surface corrugations such as wrinkles and atomic ripples. Such corrugations can induce the friction anisotropy of graphene, and therefore, accurate imaging of the surface corrugation is significant for better understanding about the friction anisotropy of CVD graphene. In this work, the combinatorial analysis using friction force microscopy (FFM) and transverse shear microscopy (TSM) was implemented to unveil the friction anisotropy of CVD bi-layer graphene. The periodic friction anisotropy of the wrinkles was measured following a sinusoidal curve depending on the angles between the wrinkles and the scanning tip, and the two domains were observed to have the different friction signals due to the different directions of the atomic ripples, which was confirmed by the high-resolution FFM and TSM imaging. In addition, we revealed that the atomic ripples can be easily suppressed by ironing the surface during AFM scans with an appropriate normal force. This work demonstrates that the friction anisotropy of CVD bilayer graphene is well-correlated with the corrugated structures and the local friction anisotropy induced by the atomic ripples can be controllably removed by simple AFM scans.

Focused Electron Beam-Controlled Graphene Field-Effect Transistor

  • Kim, Songkil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.360-366
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    • 2020
  • Focused electron beams with high energy acceleration are versatile probes. Focused electron beams can be used for high-resolution imaging and multi-mode nanofabrication, in combination with, molecular precursor delivery, in an electron microscopy environment. A high degree of control with atomic-to-microscale resolution, a focused electron beam allows for precise engineering of a graphene-based field-effect transistor (FET). In this study, the effect of electron irradiation on a graphene FET was systematically investigated. A separate evaluation of the electron beam induced transport properties at the graphene channel and the graphene-metal contacts was conducted. This provided on-demand strategies for tuning transfer characteristics of graphene FETs by focused electron beam irradiation.