• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1199-1204
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• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.505-509
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• 2016

We have investigated the characteristics of amorphous silicon (a-Si) thin-film solar cell by inserting barrier layer. The conversion efficiency of a-Si thin-film solar cells on graphite substrate shows nearly zero because of the surface roughness of the graphite substrate. To enhance the performance of solar cells, the surface morphology of the back side were modified by changing the barrier layer on graphite. The surface roughness of graphite substrate with the barrier layer grown by plasma enhanced chemical vapor deposition (PECVD) reduced from ~2 um to ~75 nm. In this study, the combination of the barrier layer on graphite substrate is important to increase solar cell efficiency. We achieved ~ 7.8% cell efficiency for an a-Si thin-film solar cell on graphite substrate with SiNx/SiOx stack barrier layer.

• Journal of Korea Foundry Society
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• v.2 no.3
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• pp.2-15
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• 1982

In this study, the influenced of graphite shape on the boriding of cast iron and boride structure was investigated. Gray cast iron, ferritic and pearlitic ductile cast iron were borided at 750,850,900 and $950^{\circ}C$ for 1,3 and 5 hours by powder pack method with the mixture of $B_4C_9\;Na_2B_4O_7$, $KBF_4$ and Shc. The boride layer was consisted of FeB(little), $Fe_2B$ (main) and graphite. Some possibility of the existence of unknown Fe-B-C compound in the boride layer was suggested. And precipitates in the diffusion zone was $Fe_3(B,C)$. The concentration of Si and precipitation of $Fe_3(B,C)$ in the ${\alpha}$ layer raised the hardness of this Zone. The depth and hardness of boride layer increased with the increase of treating temperature and tim. But high temperature (over $950^{\circ}C)$ caused pore at graphite position and long treating time (5hrs) sometimes caused formation of graphite layer beneath the boride layer. So, for the practical application of borided cast iron, treating in short time and at low temperature was recommended. And for ductile cast iron, ferritizing or pearlitizing heat treatment was seemmed to be possible at the same time with boriding. The graphite in the boride layer was deeply concerned with the qualitx and characteristics of the boride layer. And it greatly influenced on the shape of the boride phase, structure of the boride layer. Generally speaking, the existance of graphite restrained the growth of the boride phase. But the boundary between the gsaphite and the matrix acted as the shortcut of boron diffusion. So, for gray cast iron, the graphite layed length-wise led the formation of boride layer.

• Journal of Powder Materials
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• v.25 no.2
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• pp.99-103
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• 2018

Spherical monosized pure aluminum (Al) particles are successfully fabricated by the pulsated orifice ejection method (POEM). The surface reaction between Al and the graphite crucible is investigated by analysing the microstructure and chemical composition of the materials. No significant chemical reaction occurs between Al and the graphite owing to the crystalline Al oxide (${\gamma}-Al_2O_3$) layer generated in the initial state. The ${\gamma}-Al_2O_3$ layer is clearly observed in all regions between the Al particles and graphite via transmission electron microscopy and confirmed by the selected area diffraction pattern. The morphology of the ${\gamma}-Al_2O_3$ layer perfectly follows the surface morphology of the graphite crucible, which showed nanoscale roughness. This implies that molten Al could not directly contact graphite even though the surface of the crucible became rough to some extent. However, this passivation phenomenon allowed the successful fabrication of monosized pure Al particles. Therefore, POEM is a useful process at least to manufacture monosized pure Al particles.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.614-619
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• 2012

We investigated color and graphite layer formation on the surface of Type I tinted brown diamonds exposed for 5 minutes under a high-pressure high-temperature (HPHT) condition in a stable graphite regime. We executed the HPHT processes of Process I, varying the temperature from $1600^{\circ}C$ to $2300^{\circ}C$ under 5.2 GPa pressure for 5 minutes, and Process II, varying the pressure from 4.2 to 5.7 GPa at $2150^{\circ}C$ for 5 minutes. Optical microscopy and micro-Raman spectroscopy were used to check the microstructure and surface layer phase evolution. For Process I, we observed a color change to vivid yellow and greenish yellow and the growth of a graphite layer as the temperature increased. For Process II, the graphite layer thickness increased as the pressure decreased. We also confirmed by 531 nm micro-Raman spectroscopy that all diamonds showed a $1440cm^{-1}$ characteristic peak, which remained even after HPHT annealing. The results implied that HPHT-treated colored diamonds can be distinguished from natural stones by checking for the existence of the $1440cm^{-1}$ peak with 531 nm micro-Raman spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• Journal of Korea Foundry Society
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• v.31 no.2
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• pp.66-70
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• 2011

Hot dip aluminizing (HDA) is widely used in industry for improving corrosion resistance of material. The formation of intermetallic compound layers during the contact between dissimilar materials at high temperature is common phenomenon. Generally, intermetallic compound layers of $Fe_2Al_5$ and $FeAl_3$ are formed at the Al alloy and Fe substrate interface. In case of cast iron, high contact angle of graphite existed in the matrix inhibits the formation of intermetallic compound layer, which carry with it the disadvantage of a reduced reaction area and mechanical properties. In present work, the process for the removal of graphite existed on the surface of specimen has been investigated. And also HDA was proceeded at $800^{\circ}C$ for 3 minutes in aluminum alloy melt. The efficiency of graphite removal was increased with the reduction of particle size in sanding process. Graphite appears to be present both in the region of melting followed by re-solidification and in the intermetallic compound layer, which could be attributed to the fact that the surface of cast iron is melted down by the formation of low melting point phase with the diffusion of Al and Si to the cast iron. Intermetallic compound layer consisted of $Fe(Al,Si)_3$ and $Fe_2Al_5Si$, the layer formed at cast iron side contained lower amount of Si.

• Journal of the Korean Chemical Society
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• v.14 no.3
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• pp.229-235
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• 1970

Electrodeposition of lead peroxide on the graphite core was studied. The results are following; 1) At more noble potential than 1.6V vs. S.C.E. and lower temperature than $40^{\circ}C$, $PbO_2$ deposited current efficiency is increased but deposited layer falls off easily from graphite core. 2) Oxygen overvoltage of $PbO_2$ deposited layer on the graphite core is largely with increasing $PbO_2$ depositing anodic potential and with lowlying electrolytic temperature. 3) To obtain the $PbO_2$ deposited layer without falling off from the graphite core, it is necessary to change the electrolytic conditions, anodic potential and electrolytic temperature, in four stages successively.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.445-450
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• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.874-878
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• 1994

To increase the anti-oxidation and anti-wear properties of graphite for the propellant-burning environment, SiC, Pt and Al2O3 multi-layer coatings were conducted succesisvely and the optimum condition was researched. The SiC layer was produced by pack cementation and SiC layer in thickness of 30 ${\mu}{\textrm}{m}$ coating was produced after coating for 6 hours. Pt layer was coated by sputtering, and the Al2O3 layer was coated by reactive sputtering. the thickness of Pt layer and Al2O3 layer was less than one-tenth of that of SiC layer. The pack coated specimens and multi-layer coated specimens were made using above conditions and test-fired. The test result showed that the wear rate of SiC layer is approximately 1/10 compared to that of uncoated graphite.