• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.265-268
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• 2012

The growth of AlN single crystals of large size and good quality is of prime importance for UV LEDs and power devices applications. However, the crystals having the size of more than 1 inch and high quality have not been reported in the world. In the PVT growth of AlN, the crystal morphology of as grown were important because the preferred orientation of growth of it was evaluated for growth rate increase. In the present study, the AlN single crystals grown by PVT process were evaluated by the side of the growth morphology. Optical microscopic characterization was carried out to observe the shape of the crystals and the growth facets. Furthermore the growth habit of it were discussed by observation of the surface of AlN crystals.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.199-205
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• 1996

InGaAs eqitaxial layers have been selectively grown on patterned GaAs(100) substrates by chemical beam epitaxy (CBE) using triethylgallium (TEGa), trimethylindium (TMIn), and unprecracked monoethylarsine (MEAs). Facet growth of InGaAs epilayers has also been investigated at the various growth temperatures and Si4N4 dielectric pattern directions. In [011] jirection of mask, the change from (311), (377) and (111) facets to (311) facet with increasing growth temperature was observed. In [011] direction, however, the change from (011) and (111) facets to (111) facet with increasing growth temperature was observed. These results are attributed to the sidewall growth caused by different surface migration lengths of reactants. The formation of U-shaped (100) top surface is also discussed in terms of dangling bond model.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.167-185
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• 1999

In the present paper, KLN crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-melt interfaces. The crystal compositions were determined by chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements, respectively. The blue SHG characteristics of a KLN sample were also investigated using a pulsed dye laser. PACS: 42.70.M;81.10;81.10A;42.65.K.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.396-401
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• 1999

In the present paper, potassium lithium niobate(KLN) crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-solution interfaces. The crystal compositions were determined by a chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements. respectively. The blue second harmonic generation (SHG) characteristics of KLN sample were also investigated using a pulsed dye laser.

• Korean Journal of Crystallography
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• v.2 no.1
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• pp.1-11
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• 1991

When GaAs single crystals are grown by LEC method, a serious problem is that longitudinal twins are often generated. the growth axis is changed from (100) to (221) direction by logitudinal twin. In this experiment, 3 inch GaAs single crystals, slaving (100) uonh axis, were von by LEC method. Striations and edge facets generated during crystal growth, were observed by SPW photo-etching. Relationship between striations and edge facets was studied. Instability of their generation was the cause of goneration of longitudinal twins. The shape of striations was changed with the growth conditions such as crystal diameter and melt volume. In the region of crystal edge: there was the microscopic fluctuation by the instability of melt convection. Edge facets consisting of {111} plane developed well in the region which striation were convex to the melt. Because the angle between striation and {111} edge facet decreased in that region. Longitudinal twins were generated on the crystal surface at the <111> direction which is perpendicular to the growth axis. These were generated by unstable melt convection and propagated in the crystal as crystal grew. Longitudinal twins were generated when regrowth rate was very fast after {111} edge facets were remelted. So, in order to supress the generation of longitudinal twin, abrupt change of melt convection must be prohibited.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.207-211
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• 2000

In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90。 apart will be displaced about 33° and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.165-167
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• 1998

Nd:YAG crystals were grown by Horizontal Bridgman method. The effects of sliding rate (growth rate) of Molydbenum container, growth atmosphere and concentration of Neodymium ions on crystal qualities were investigated. The size of the crystals grown was up to 150-200 mm in length, 70 mm in width and 25-35 mm in thickness. Crystals grown under the optimum conditions were violet, transparent and could not be observed any macroscopic defects. Under the polarizing microscopoc observations with crossed polar, striations, {211} facets and inclusions were detected. With the grown crystals, prototypes of laser rods for 1.06$\mu$m laser application were manufactured and then characterized. As a result, we can get high quality of Nd:YAG laser rods with <111> and <110> axis, 63 mm in length and6.3 mm in diameter.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.332-333
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• 2006

The driving forces and the probable processes of WC-Co grain growth are reanalysed from recent data of interface energy and microstructure. Grain growth is driven by the disappearing of the high energy WC/WC and WC/Co interfaces with habit planes different from {0001}, ${10\bar{1}0}$ and ${11\bar{2}0}$ facets and by the area decrease of the WC/WC and WC/Co interfaces with {0001} and ${10\bar{1}0}$ habit planes. Grain growth mainly results of dissolution-precipitation. Abnormal grains are likely formed by defects assisted nucleation.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.161-164
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• 1998

Erbium doped garnet crystals were grown by Czochralski method. Relationshipes between crystal quality and crystal growth factors such as pulling rate, rotation rate and concentration of active ions and sensitizers were investigated. Optimum pulling and rotation rate for high quality Er:YAG crystal were 1 mm/hr and 20 rpm and for Er,Cr:YSGG crystal 2-4 mm/hr and 10 rpm respectively. The size of the crystals grown was up to 20-30 mm in diameters and 95-135 mm in length. Er:YAG crystal grown under the nitrogen atmosphere was pink and transparent and Er,Cr:YSGG under the 98% {{{{ { N}_{ 2} }}}} and 2% {{{{ { O}_{2 } }}}} was dark green and transparent. Under the polarizing microscopic observations with crossed polar, striations and {211} core facets were detected. Spectroscopic properties for Er,Cr:YSGG laser rods with <111> axis, 80 mm in length and 6.3 mm in diameter for medical laser applications of 2.79 ${\mu}$m wavelength were manufactured and then laser oscillation was achieved.