• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.374-376
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• 2007

The output characteristics of HF and DF lasers were compared theoretically. The simulation code shows the good agreement with the experimental results well. As results, the effect of chain termination reaction in $F_2$ rich mixture is larger than that of $SF_6$ rich mixture in HF and DF lasers.

• Journal of Acupuncture Research
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• v.27 no.5
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• pp.51-58
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• 2010

Objectives : The purpose of this study is to assess the effect of laser acupuncture at $HT_7$ for reducing mental stress using power spectrum analysis of the heart rate variability. Methods : 36 healthy volunteers(control group: 18, treatment group: 18) participated in this study. After instrumentation and 5-minute rest period, 5-minute metal stress by operation was provided. HRV was recorded before and after the mental stress(1st, 2nd HRV). After 2nd HRV recording, the control group rested for 15 minutes without any treatments. Participants in the treatment group received laser acupuncture to $HT_7$ unilaterally and rested for 15minutes. Points were irradiated for 60seconds, and the intensity was 1.8J(output 20%). And then 3rd HRV was recorded. Results : In simple rest group, LF norm showed a significant change after mental stress. In laser acupuncture group, LF norm, HF norm, LF, HF and LF/HF ratio showed a significant change after mental stress. But there were no significant difference between two groups(ANCOVA test, p>0.05). In laser acupuncture group, LF norm, HF norm, HF and LF/HF ratio showed a significant change after laser acupuncture treatment. And there were significant differences between two groups(p<0.05). Conclusions : This study suggests that laser acupuncture at $HT_7$ can regulate and prevent the alternation of autonomic nervous system due to mental stress.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.591-593
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• 2007

최근 에너지효율이 높은 고출력 HF 레이저에 대한 관심이 다시 높아지고 있다. 레이저점화방식의 최적설계와 출력특성의 향상을 위해 정확한 이론해석 모델이 필요하다. 따라서 본 연구에서는 최신의 반응정수를 적용한 HF 화학레이저 모델을 구축하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• Journal of the Korean Chemical Society
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• v.33 no.2
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• pp.168-176
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• 1989

Theoretical analysis of HF chemical laser models are performed through chemical reaction kinetics, gain process and stimulated emission process. A chemical laser of F+$H_2$ nonchain reaction is investigated through V-R transitions of excited HF for vibrational levels up to v = 3 and rate equations including nonchain pumping and deactivation. On this analysis, harmonic and anharmonic vibrational levels are considered separately and the results of the corresponding power calculations are showed very small difference between the two. Output powers are calculated with variation of temperature and initial concentrations of $H_2$. A HF chemical laser of $H_2$+$F_2$ chain reaction is also simulated with a premixed initial condition. Results of present model calculations are satisfactory through comparison with detailed calculations reported by others.

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.153-157
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• 2001

Operation conditions for the generation of an HF laser driven by fluorine-hydrogen combustion were discussed by mc:asuring the intensities of excited HF* molecules. Optimum injection quantities of fluorine gas for the generation of fluorine atoms was two times the injection mole number of hydrogen fuel. Slit nozzles with two dimensional configuration were used for the production of excited HF* molecules. When the injection mole number of secondary hydrogen gas is 1.3 times the injection mole number of fluorine gas, the fluorescence intensities of excited HF* molecules show maximum values. alues.

• Bulletin of the Korean Chemical Society
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• v.15 no.9
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• pp.724-729
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• 1994

The effect of oxygen for the HF chemical laser performance has been theoretically investigated. Due to the inhibition mechanism of $O_2$ in $H_2$/$F_2$ chain reaction, the rate for the formation of HF is reduced by the addition of $O_2$. As the concentration of $O_2$ in the reaction mixture increases, the pulse power and temperature of the system becomes lower, while total output energy does not change significantly. But addition of $O_2$ makes the system easy to be controlled and the composition of $H_2$+$F_2$ can be high at constant total pressure. With this system, it is possible to obtain higher output energy than oxygen free environment.

• The Journal of the Society of Stroke on Korean Medicine
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• v.6 no.1
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• pp.9-16
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• 2005

Objective : The heart rate variability is very useful indicator to study the function of the autonomic nervous system(ANS), and the physiologic signals can be observed based on the changes of the ANS of the heart. In order to assay the effects of the laser exposing to healthy subjects, the double blind test has been performed. Methods : This study included 62 healthy adults who have not any ANS disease and had normal sinus rhythm in electrocardiogram. The control group consisted of 31 subjects, laser group consisted of 31 subject. HRV was measured for 5 minutes before laser irradiation, sham and real laser irradiated for 30 minutes and than HRV remeasured for 5 minutes. Statistical significance was evaluated by independent T-test. Results : Mean HRV, Ln(VLF), Ln(HF), Ln(TP) of both groups at post-laser period decreased compared with that of the pre-laser period. Ln(LF) of both groups at post-laser period increased compared with that of the pre-laser period. LF/HF, SDNN of real laser group decreased and sham group decreased. Conclusions : There is no difference between two groups. The reason is presumed that all the studied subjects are healthy adults, and also the short and single transcutaneous laser irradiation would not influence upon changes of the ANS. The further study must be followed.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.2-64
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• 2003

Epitaxial yttrium-stabilized HfO$_2$ thin films were deposited on p-type (100) Si substrates by pulsed laser deposition at a relatively lower substrate temperature of 550. Transmission electron microscopy observation revealed a fixed orientation relationship between the epitaxial film and Si; that is, (100)Si.(100)HfO$_2$ and [001]Si/[001]HfO$_2$. The film/Si interface is not atomically flat, suggesting possible interfacial reaction and diffusion, X-ray photoelectron spectrum analysis also revealed the interfacial reaction and diffusion evidenced by Hf silicate and Hf-Si bond formation at the interface. The epitaxial growth of the yttrium stabilized HfO$_2$ thin film on bare Si is via a direct growth mechanism without involoving the reaction between Hf atoms and SiO$_2$ layer. High-frequency capacitance-voltage measurement on an as-grown 40-A yttrium-stabilized HfO$_2$ epitaxial film yielded an dielectric constant of about 14 and equivalent oxide thickness to SiO$_2$ of 12 A. The leakage current density is 7.0${\times}$ 10e-2 A/$\textrm{cm}^2$ at 1V gate bias voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.