• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.48-53
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• 2008

In order to reduce signal delay in ULSI, an intermetal material of low dielectric constant is required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. The ordered mesoporous silica film prepared by TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-76 surfactant was surface-modified by HMDS (hexamethyldisilazane) treatment to reduce its dielectric constant. HMDS can substitute $-Si(CH_3)_3$ groups for -OH groups on the surface of silica wall. In order to modify interior silica wall, HMDS was treated by two different processes except the conventional spin coating. One process is that film is dipped and stirred in HMDS/n-hexane solution, and the other process is that film is exposed to evaporated HMDS. Through the investigation with different HMDS treatment, it was concluded that surface modification in evaporated HMDS was more effective to modify interior silica wall of nano-sized pores.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.159-159
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• 2007

In order to reduce a signal delay in ULSI, low resistive metal and intermetal dielectric material of low dielectric constant are required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. In this study, ordered mesoporous silica films was synthesized using TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-$76^{(R)}$ surfactant. These films had the porosity of 40% and dielectric constant of 2.5. To lower dielectric constant, the ordered mesoporous silica films were surface-modified by HMDS (hexamethyldisilazane) treatment. HMDS substituted -OH groups on the surface of silica wall for -Si$(CH_3)_3$ groups. After the HMDS treatment, ordered mesoporous silica films were calcined at various calcination temperatures. Through the investigation, it was concluded that the proper calcination temperature is necessary as aspects of structural, electrical, and mechanical properties.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.4 no.1
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• pp.61-67
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• 2011

Influence of hexamethyldisilazane(HMDS) in post processing technique by using n-butanol azeotropic distillation on the luminescence properties of YAG:Ce nanophosphor were studied. The organic solvent(n-butanol) azeotropic distillation which prevent powders from conglobation since lager molecules decrease the surface tension and more complete replace the residual water in the precipitate. HMDS that had larger molecules than that of n-butanol was added in azeotropic distillation. The phosphor synthesized from n-butanol azeotropic distillation exhibited lower agglomerate and better photoluminescence properties than that from HMDS added heterogeneous azeotropic distillation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.735-738
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.338-342
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• 2003

Adhesion between Cu and low-k films has been investigated. Low-k films deposited using a mixture of hexamethyldisilane(HMDS) and Para-xylene had a dielectric constant as low as 2.7, showing the thermally stable properties up to $400^{\circ}C$. In this study, Ti glue layer, boron dopant, and $N_2$plasma treatment were used to improve adhesion property of between Cu and low-k films. Ti glue layer slightly improved adhesion property. After $N_2$plasma treatment, the adhesion property was significantly improved due to the increased roughness and the formation of new binding states between Ti and plasma-treated PPpX : HMDS. However, $300^{\circ}C$ annealing of $N_2$plasma treated sample caused the diffusion of Cu into the PPpX : HMDS, degrading the low-k properties. In the case of Cu(B)/Ti/PPpX : HMDS, the adhesion was remarkably increased. This enhanced adhesion was attributed to formation of Ti-boride at the Cu-Ti interface. It is because the formed Ti-boride prevented the diffusion of Cu into the PPpX : HMDS and the Cu-Ti reaction at the Ti interface.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.100.1-100
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.39-39
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• 1998

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.66.1-66.1
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• 2007

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.699-706
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• 2018

The permeation properties of plasma polymer membranes were studied for permanent gases such as He, $H_2$, $O_2$, $N_2$, $CH_4$ and condensable vapors such as $CO_2$, $C_2H_4$, $C_3H_8$. The plasma polymers were prepared by the discharge of microwave or radiofrequency(RF) wave. Hexamethyldisiloxane (HMDS) vapor was used as a monomer for plasma polymerization. In HMDS plasma-polymerized membranes prepared under microwave discharge, the permeability coefficient was dependent of the kinetic molecular diameter of the permeate gases. Additionally the membranes showed higher $O_2/N_2$ permselectivity compared to the plasma polymers from radiofrequency discharge. On the contrary, in the HMDS plasma-polymerized membranes prepared under radiofrequency discharge, the permeability coefficient was dependent of the critical temperature of the permeant gases. The membranes showed high selectivities of $C_2H_4$ and $C_3H_8$ over $N_2$. The permeability coefficient of plasma polymerized membranes prepared under microwave discharge was dependent of the molecular diameter of permeant gases because of high crosslinking density of the membrane. However, the crosslinking density of the plasma polymerized membranes prepared under RF discharge was lower because the energy density of RF wave is weaker than that of microwave. Hence, the permeability of RF plasma polymerized membranes became dependent of the critical temperature rather than molecular diameter of the gases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).