• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.288-295
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• 1999

Partial conductivities contributed by electron holes, oxygen ions, and protons were caluclated in $SrZr_{0.95}Y_{0.05}O_{2.975}$, using the reported formulae derived from the defect chemistry of HTPCs. Required parameters were obtained from the graphical analysis of total conductivity variation against partial pressure of water vapor and oxygen. Predicted overall conductivities showed a reasonable agreement with experimental measurements. The conductivity of the material showed a linear increase with square root of the water vapor pressure. This increase was due to proton conduction in an almost pure ionic conductivity. The calculation of partial conductivities at $800^{\circ}C$ resulted in an almost pure ionic conductivity at $P_{02}=10^{-10}$ atm and a predominant hole conductivity at $P_{02}=10^{-10}$ atm. Pure proton conduction was not expected at this temperature, contrary to the earlier reports. Discussions were made in relation with reported thermodynamic data and defect structure of the material. It was shown that from the total conductivity dependence on water vapor pressure, the pure ionic conductivity at low oxygen partial pressures could be separated into protonic and oxygen ionic conductivity in $ZrO_2$-based HTPCs.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.136-140
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• 1998

This work demonstrates a method for modeling of electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions and electron holes. From the polt $\sigma_{tot}$ vs. $po_2\;{1/4}$ in wet atmosphere, thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulas for the calculation of partial conduction were derived based on the defect structure of HTPCs. Illustrative calculation were made for $SrCe_{0.95}Yb_{0.05}O_{2.975}$ system.