• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.183-183
• /
• 2000

Aigrain에 의해 Helicon이라는 이름이 명명된 이후, helicon은 저온의 금속과 같은 높은 전도도(conductivity)를 갖는 매질이나 강한 자기장이 걸려있는 plasma를 전파해 나가는 저주파 전자기장을 지칭해왔다. 이온화된 개스에서 이러한 전자기장은 전자 공명 주파수(electron cyclotron frequency)와 이온 공명 주파수(ion cyclotron frequency) 사이의 주파수로 전파하며 전리층 (ionosphere)을 통과하며 발생하는 가청 주파수 영역대의 음조가 강하하는 현상에 의해 low-frequency whistler라고도 불린다. Helicon wave plasma는 Boswell에 의해 처음 발생된 후, 높은 이온화율(~100%)로 인해 많은 연구가 이루어져 왔다. 1985년에 Chen은 helicon plasma의 높은 이온화율을 설명하기 위해 Landaudamping을 제시하였다. 이러한 설명은 1997년에 Shamrai에 의해 TG mode가 도입되기 전까지 직접적인 실험결과 없이 helicon plasma 발생의 mechanism으로 받아들여졌다. shamrai의 이론에 의하면 정전기파(electrostatic wave)는 plasma의 표면(surface)에서 강하게 감쇄되어 energy를 전달하게 된다. Cho는 radial density 분포가 외각보다 중심이 높을 경우 TG wave의 power 전달이 중심에서 일어날 수 있음을 계산하였다. Helicon plasma의 특성은 높은 이온화율에 의한 높은 밀도($\geq$1012cm3), 1-2 kW의 rf power에서 상대적으로 낮은 전자 온도( 4eV), $\omega$ci $\omega$LH<$\omega$ $\omega$ce $\omega$pe 영역대의 주파수, 자기장 50-1200 Gauss, 압력 1-10 mTorr로 특정지을 수 있다. 이러한 외부분수들의 조건에 k라 helicon plasma는 여러 종류의 mode로 존재한다. Degeling은 이러한 mode의 변화를 capacitive mode, inductive mode, 그리고 helicon mode(wave mode)의 세가지 부분으로 구분하였다. Helicon plasma가 갖는 높은 이온화율은 여러 가지 응용으로의 가능성을 가지고 있다. 그 예로 plasma processing, plasma wave에 의한 입자 가속, 그리고 가스 레이저 활성 매질 발생 등이 있다. 특히 plasma processing의 경우 helicon plasma는 높은 밀도, 비교적 낮은 자기장, remote operation 등이 가능하다는 점에서 현재 연구가 활발히 진행되고 있다. 상업용으로도 PMT와 Lucas Signatone Corp.에 서 helicon source가 제작되었다. 또한 높은 해리율을 이용하여 저유전 물질인 SiOF의 증착에서 적용되고 있다. 이 외에도 다수의 연구결과들이 발표되었다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.274-274
• /
• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.85-92
• /
• 1996

The external electricla characteristics of helicon wave plasmas were measured over a wide range of RF power and magnetic filed. External parameters. such as antenna voltage , current, phase shift, and interanl parameter, electron density were measured at 7MHz, 1mTorr Ar discharge . The equivalent discharge resistance and reactance, and the power transfer efficiency were calculated through these measurements. There are a helicon mode which produces high density plasma by helicon wave and a lowmode which produces low density plasma by capaictive electric field. In case of the helicon mode, the anternna voltage and current were lower than those of the low-mode. The phase difference between voltage and current decreased suddenly at the transition point from the low-mode to the helicon mode. Equivalent resistance and power efficiency increased and reactance decreased suddenly at the transition point. These results mean that the power transperred to plasma and the nutual coupling between the antenna and plasma increase as the mode changes from the low-mode to the helicon mode.

• Journal of the Korean institute of surface engineering
• /
• v.27 no.6
• /
• pp.327-334
• /
• 1994

This work concerns a research for helicon wave plasma generators with applications to materials pro-cessing. For this end, helicon wave plasma source has been designed, constructed and tested. High density plasma was successfully produced and diagnosed with Langmuir probe. The measured maximum plasma de-nsity in this work was $10^{11}cm{-3}$ with 295 gauss of magnetic field and electron temperature was about 3.5eV. The uniformity of plasma densities in the radial direction was excellent with 160 gauss of magnetic field on the cross section which is 10cm apart from the edge of the exciting coil.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.94-94
• /
• 2002

• Journal of the Korean Vacuum Society
• /
• v.4 no.2
• /
• pp.201-209
• /
• 1995

고밀도 helicon wave 플라즈마의 특성 및 이온 에너지 분포에 관하여 연구하였다. Helicon wave에 의하여 고밀도의 플라즈마를 형성시키는 helicon mode와 capacitive field가 지배적이어서 electrostatic 방전이 되어 저밀도의 플라즈마를 형성시키는 low mode가 존재하는 것을 관찰하였다. rf modulation된 플라즈마 전위가 이온 에너지 분석기를 통하여 얻어지는 이온 에너지 분포에 미치는 영향을 이론 및 실험적으로 관찰하였다. 이온 에너지 분포의 분석을 통하여 low mode에서는 플라즈마 전위가 rf 주파수로 Vp-p의 크기로 modulation되는 것을 확인하였다. Helicon mode에서는 inductive field가 capacitive field보다 우세하기 때문에 플라즈마 전위의 rf modulation은 일어나지 않았다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.11a
• /
• pp.154-154
• /
• 2001

• Journal of the Korean Ceramic Society
• /
• v.40 no.9
• /
• pp.886-890
• /
• 2003

The etching characteristics of a LiNbO$_3$ single crystal have been investigated using helicon wave plasma source with bias power and the mixture of CF$_4$, HBr, SF$_{6}$ gas parameters. The etching rate of LiNbO$_3$ with etching parameters was evaluated by surface profiler. The etching surface was evaluated by Atomic Force Microscopy (AFM). The surface morphology of the etched LiNbO$_3$ changed with bias power and the mixture of CF$_4$/Ar/Cl$_2$, HBr/Ar/Cl$_2$, and SF$_{6}$/Ar/Cl$_2$ parameters. Optimum etching conditions, considering both the surface flatness and etch rate were determined.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.6
• /
• pp.658-664
• /
• 1999

Helicon sources are attractive for plasma processing because they provide high plasma density in low magnetic fields. Helicon waves were excited by a Nagoya type III antenna in a magnetized plasma column. Plasma parameters were measured with a double probe, and the structure and adsorption of the helicon wave fields were determined with the probes. Argon is fed through a MFC (mass flow controller) for operation pressure of 10~110 mtorr. A 13.56 MHz r.f. power of 50~450 W is induced through the antenna. The plasma density and electron temperature are measured as functions of external magnetic field, r.f. power and pressure. The plasma density as functions of r.f. power and magnetic field at a constant pressure increased linearly, and the electron temperature did not change largely with various operation parameters and the value was around 5~7 eV.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.95-96
• /
• 1998