• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.463-464
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• 2008

As the demands of LCD and PDP TV are increasing, the high performance HVICs(High Voltage Gate Driver ICs) technology is becoming more necessary. In this paper, we designed the HVIC that has enhanced noise immunity and high driving capability. It can operate at 500KHz switching frequency and permit 600V input voltage. High-side level shifter is designed with noise protection circuit and schmitt trigger. Therefore it has very high dv/dt immunity, the maximum being 50V/ns. The HVIC was designed using $1{\mu}m$ BCD 650V process and verified by Spectre and PSpice of Cadence inc. simulation.

• ETRI Journal
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• 제20권1호
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• 대한전자공학회논문지SD
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• 제45권10호
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• pp.7-14
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• 2008

본 논문에서는 $1.0{\mu}m$ BCD 650V 공정을 이용하여 향상된 잡음 내성과 높은 전류 구동 능력을 갖는 고전압 구동 IC를 설계하였다. 설계된 고전압 구동 IC는 500kHz의 고속 동작이 가능하고, 입력 전압의 범위가 최대 650V이다. 설계된 IC에 내장된 상단 레벨 쉬프터는 잡음 보호회로와 슈미트 트리거를 포함하고 있으며 최대 50V/ns의 높은 dv/dt 잡음 내성을 가지고 있다. 또한 설계된 숏-펄스 생성회로가 있는 상단 레벨 쉬프터의 전력 소모는 기존 회로 대비 40% 이상 감소하였다. 이외에도 상 하단 파워 스위치의 동시 도통을 방지하는 보호회로와 구동부의 전원 전압을 감지하는 UVLO(Under Voltage Lock-Out) 회로를 내장하여 시스템의 안정도를 향상시켰다. 설계된 고전압 구동 IC의 특성 검증에는 Cadence사의 spectre 및 PSpice를 이용하였다.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.