• Applied Science and Convergence Technology
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• v.24 no.2
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.24-24
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• 2007

Aerosol deposition(AD) method is a emerging technology for the room temperature deposition of the dielectric thin films with high quality. In this study, $Al_2O_3$ thin films were deposited by aerosol deposition method directly from raw powders. To get uniform and smooth film surface, Process parameters such as gas consumption rate, nozzle-substrate distance and vibration speed were optimized. From XRD results, $Al_2O_3$ thin films have the same crystal structures with starting powders. $Al_2O_3$ thin films also showed dense microstructure. Electrical properties of the thin films were also investigated.

• Bulletin of the Korean Chemical Society
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• v.24 no.1
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• pp.86-90
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• 2003

Reverse-Water-Gas-Shift reaction (RWGSR) was carried out over the ZnO, $Al_2O_3,\;and\;ZnO/Al_2O_3$ catalysts at the temperature range from 400 to 700 ℃. The ZnO showed good specific reaction activity but this catalyst was deactivated. All the catalysts except the $ZnO/Al_2O_3$ catalyst (850 ℃) showed low stability for the RWGSR and was deactivated at the reaction temperature of 600 ℃. The $ZnO/Al_2O_3$ catalyst calcined at 850 ℃ was stable during 210 hrs under the reaction conditions of 600 ℃ and 150,000 GHSV, showing CO selectivity of 100% even at the pressure of 5 atm. The high stability of the $ZnO/Al_2O_3$ catalyst (850 ℃) was attributed to the prevention of ZnO reduction by the formation of $ZnAl_2O_4$ spinel structure. The spinel structure of $ZnAl_2O_4$ phase in the $ZnO/Al_2O_3$ catalyst calcined at 850 ℃ was confirmed by XRD and electron diffraction.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.67-72
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• 2014

Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties, including high strength, high hardness, excellent ductility and toughness. In this study, nanopowders of $Al_2O_3$, MgO and $TiO_2$ were prepared as starting materials by high energy ball milling for the simultaneous synthesis and sintering of the nanostructured compound $Mg_4Al_2Ti_9O_{25}$ by high-frequency induction heating process. The highly dense nanostructured $Mg_4Al_2Ti_9O_{25}$ compound was produced within one minute by the simultaneous application of 80MPa pressure and induced current. The sintering behavior, grain size and mechanical properties of the $Mg_4Al_2Ti_9O_{25}$ compound were evaluated.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.398-402
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• 2000

Three kinds of $Al_3Ti-Cr$ alloys, namely, $Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{59}Ti_{26}Cr_{15}$, were prepared by induction melting followed by the thermomechanical treatment. The corrosion behavior in 3.5% NaCl solution and the high-temperature oxidation behavior at 1000, 1100 and $1200^{\circ}C$ for the prepared alloys were investigated. Electrochemical results indicated increased resistance to localized corrosion with increasing Cr content. Cr additions were found to prevent passive film from undergoing brittle fracture. XPS results revealed the passive films of $Al_3Ti-Cr$ alloys were composed mainly of $Al_2O_3$ that coexisted with $TiO_2$ and $Cr_2O_3$. The overall oxidation resistance of the prepared alloys were excellent. Specifically, the oxidation resistance increased in the order of $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;and\;Al_{67}Ti_{25}Cr_8$. As the Al content in the base alloys increased, the $Al_2O_3$ formation was facilitated leading to the increased oxidation resistance.

• Korean Journal of Materials Research
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• v.24 no.2
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• pp.81-86
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• 2014

The nitrogen solubility and nitride capacity of $CaO-SiO_2-Al_2O_3-MgO-CaF_2$ slag systems were measured by using gas-liquid equilibration at 1773K. The nitrogen solubility of this slag system decreased with increasing CO partial pressure, with the linear relationship between nitrogen contents and oxygen partial pressure being -3/4. This system was expected to show two types of nitride solution behavior. First, the nitrogen solubility decreased to a minimum value and then increased with the increase of CaO contents. These mechanisms were explained by considering that nitrogen can dissolve into slags as "free nitride" at high basicities and as "incorporated nitride" within the network at low basicities. Also, the basicity of slag and nitride capacity were explained by using optical basicity. The nitrogen contents exhibited temperature dependence, showing an increase in nitrogen contents with increasing temperature.

• Korean Journal of Materials Research
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• v.24 no.7
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• pp.370-374
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• 2014

Inorganic pigments have high thermal stability and chemical resistance at high temperature. For these reasons, they are used in clay, paints, plastic, polymers, colored glass and ceramics. $CoAl_2O_4$ nano-powder was synthesized by reverse-micelle processing the mixed precursor(consisting of $Co(NO_3)_2$ and $Al(NO_3)_3$). The $CoAl_2O_4$ was prepared by mixing an aqueous solution at a Co:Al molar ratio of 1:2. The average particle size, and the particle-size distribution, of the powders synthesized by heat treatment (at 900; 1,000; 1,100; and $1,200^{\circ}C$ for 2h) were in the range of 10-20 nm and narrow, respectively. The average size of the synthesized nano-particles increased with increasing water-to-surfactant molar ratio. The synthesized $CoAl_2O_4$ powders were characterized by X-ray diffraction analysis(XRD), field-emission scanning electron microscopy(FE-SEM) and color spectrophotometry. The intensity of X-ray diffraction of the synthesized $CoAl_2O_4$ powder, increased with increasing heating temperature. As the heating temperature increased, crystal-size of the synthesized powder particles increased. As the R-value(water/surfactant) and heating temperature increased, the color of the inorganic pigments changed from dark blue-green to cerulean blue.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.143-147
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• 2006

Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.