• Analytical Science and Technology
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• v.15 no.2
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• pp.120-126
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• 2002

The analytical performance of four commercially-available pneumatic nebulizers(Meinhard, Cross-flow, Babington, ESI PFA) was evaluated using inductively coupled plasma-atomic emission spectrometry (ICP-AES) and ICP-mass spectrometry (ICP-MS) instruments. The performance of an inert concentric nebulizer and a modified conespray nebulizer, made in Korea Research Institute of Standards and Science (KRISS), is compared with that of the four commercial nebulizers. Variation of sample introduction efficiency was investigated as carrier argon pressure and sample uptake rate were changed. Variation of sensitivity, signal stability, blank intensity and oxide/hydride ratios were also studied when the nebulizers were connected to the ICP-MS and ICP-AES instruments. It was found that good analytical result such as high sensitivity, low blank, stable signal and so on can be obtained with judicious selection of the nebulizer depending on the type of sample, sample amount, type of analytical instrument and analyte.

• Analytical Science and Technology
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• v.10 no.4
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• pp.240-245
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• 1997

An accurate analysis method for the determination of lead in whole blood by ICP/MS was developed. Whole blood samples were decomposed in microwave digestion system without any contamination and loss of lead. The 96 samples were analyzed by ICP/MS using mass$^{208}$ isotope of lead. Lead concentrations of human whole blood were ranged of $2.50{\sim}22.8{\mu}g/dL$. The accuracy of this analysis method was verified by analyzing of NIST SRM 955a series(lead in blood).

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.63-71
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• 2007

현재 반도체 산업에서 플라즈마는 다양한 공정에 적용되고 있으며, 고집적 대면적 공정을 위한 다양한 플라즈마원들이 개발 중에 있다. 이 중 ICP는 현재 고밀도 플라즈마를 요구하는 공정에서 널리 쓰이고 있는 플라즈마원이다. 그러나 ICP는 안테나와 플라즈마 사이의 결합이 낮아 안테나의 전압과 전류가 높으며, 대면적에 적용하기 어려운 디자인 등의 여러 가지 문제점 들을 가지고 있는데, 이러한 ICP의 문제를 해결하기 위한 방법으로 강자성체를 ICP에 응용하는 플라즈마원이 연구되어 왔고 일부 장치에 쓰이고 있다. 이것은 ICP의 많은 문제들을 해결하면서도 여러 가지 장점을 가지는 것으로 평가되고 있다. 강자성체를 이용한 ICP는 플라즈마와 안테나의 결합계수가 1에 가깝기 때문에 강자성체 ICP에서는 간편한 변압기 임피던스 매칭이 적용 가능하다. 이 논문에서는 릴레이를 이용하여 변압기의 권선수를 제어하는 방식을 통해 새로운 임피던스 매칭이 제안되었다. 간단한 매칭 시스템을 구현하여 권선비가 바뀌었을 때 특성을 분석하였다. 2-채널 릴레이를 사용할 때 임피던스 매칭이 가능하였고, 디지털 회로와 마이크로콘트롤러를 사용하여 디지털 임피던스 매칭 시스템을 구현하였다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.65-70
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• 1998

The Spray-ICP technique uses the ICP(Inductively Coupled Plasma) of ultra-high temperature which is produced by r.f power. The ICP is well-kwown as a clean heat source for the preparation of pure ceramic particles because the ICP is a electrodeless-thermal plasma without contamination. In this study,{{{{ { SnO}_{2 } }}}} particles were sythesized from metal salt solution by Spray-ICP technique. The effects of concentration of solution, collecting location of powders were investicated. The prepared {{{{ { SnO}_{2 } }}}} particles from each concentration of solution had same crystalline phase(tetragonal {{{{ { SnO}_{2 } }}}}) a nd the mean size decreased in proportion to the increase of solution concentration. Each {{{{ { SnO}_{2 } }}}} p owders collector in reactor and electrostatic collector had same crystalline phase and morphologies. The mean size of {{{{ { SnO}_{2 } }}}} p articles prepared by Spray-ICP technique was below 30nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.328.1-328.1
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• 2014

MOSFET degradation의 대부분은 hot-carrier injection에 의한 interface state (Dit)의 생성에서 비롯되며 따라서 본 연구에서는 신뢰성에 대한 한 가지 방법으로 Charge pumping method를 이용하여 MOSFET의 interface trap(Dit)의 변화를 측정하였다. 소스와 드레인을 ground로 묶고 게이트에 펄스를 인가한 후 Icp를 측정하여 Dit를 추출하였다. 온도를 293~343 K까지 5 K씩 가변했을 때 293K의 Icp(${\mu}A$)는 0.12 nA 313 K는 0.112 nA 343 K는 0.926 nA이며 Dit (cm-1/eV-1)는 $1.61{\times}10^{12}$ (Cm-2/eV-1) $1.49{\times}10^{12}$ (Cm-2/eV-1) $1.23{\times}10^{12}$ (Cm-2/eV-1)이다. 측정결과 Dit는 Icp가 높은 지점에서 추출되며 온도가 높아지게 되면 Icp전류가 낮아지고 Dit가 줄어드는 것을 볼 수 있다. 온도가 올라가게 되면 carrier들이 trap 준위에서 conduction band 위쪽에 이동하게 되어서 interface에 trap되는 양이 작아지게 된다. 그래서 이때 Icp를 이용해 추출한 Dit 는 실제로 trap의 양이 줄어든 것이 아니라 Thermal excess 현상으로 인해 측정되는 Icp의 양이 줄어든 것으로 분석할 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.612-615
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• 2000

The etch rate of $SiO_2$ in Enhanced - Inductive Coupled Plasma (E-ICP) and CW-ICP systems are investigated. As addition of $O_2$ to $CF_4$ gas increases oxide etch rate, E-ICP etching shows the highest etch rate (about 6000A) at an optimized condition with 30% $O_2$ in $CF_4$ 70Hz at the modulation frequency of 70Hz. E-ICP also shows better etch profile than CW-ICP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.608-611
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• 2000

Large area plasma source becomes important as the substrate size increases. In this work, four inductively coupled plasma(ICP) unit sources are distributed 2${\times}$2 array. E-ICP concept is applied to the 2${\times}$2 array ICP and its effect is examined. Characteristics of the plasma are measured, and photoresist etching is performed with oxygen plasma. Good etching characteristic in terms of etching rate and uniformity can be obtained with E-ICP.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.573-576
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• 1998

In this paper, we analyzed electric field density and plasma condition to ICP reactor geometry structure, to generate plasma, to maintain plasma uniformity of large area LCD panel in ICP reactor also, we simulated electric field density for all kind existence current (antena and plasma current) in ICP reactor to analyze plasma antena structure

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.375-379
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• 2014

Nanocrystalline TiAlN coatings were prepared by reactively sputtering TiAl metal target with $N_2$ gas. This was done using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) conditions at various power levels. The effect of ICP power (from 0 to 300 W) on the coating microstructure, corrosion and mechanical properties were systematically investigated using FE-SEM, AFM and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of TiAlN coatings. With increasing ICP power, the coating microstructure evolved from the columnar structure typical of DC sputtering processes to a highly dense one. Average grain size of TiAlN coatings decreased from 15.6 to 5.9 nm with increasing ICP power. The maximum nano-hardness (67.9 GPa) was obtained for the coatings deposited at 300 W of ICP power. The smoothest surface morphology (Ra roughness 5.1 nm) was obtained for the TiAlN coating sputtered at 300 W ICP power.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.4
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• pp.274-281
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• 2010

This paper proposes a DFPS (Dual Frequency Power Source) impedance matching device for uniformity improvement of a semiconductor plasma etching system. The DFPS consists of two parts for safe plasma processing on large-area substrates. The first part is an ICP (Inductively Coupled Plasma) for high integration by using ferrite core. The second part is a CCP (Capacitive Coupled Plasma) to control uniformity of whole cells. Proposed DFPS can achieve high productivity improvement required for semiconductor equipment industry. The proposed plasma system is analyzed, simulated and experimentally verified with a matching equipment at 27.12MHz and 400kHz.