• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.123-129
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• 2012

Nanocrystalline CrN coatings were fabricated by DC and ICP (inductively coupled plasma) assisted magnetron sputtering techniques. The effect of ICP power, ranging from 0 to 500 W, on coating microstructure, preferred orientation mechanical properties were systematically investigated with HR-XRD, SEM, AFM and nanoindentation. The results show that ICP power has an significant influence on coating microstructure and mechanical properties of CrN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Grain size of CrN coatings were decreased from 11.7 nm to 6.6 nm with increase of ICP power. The maximum nanohardness of 23.0 GPa was obtained for the coatings deposited at ICP power of 500 W. Preferred orientation in CrN coatings also vary with ICP power, exerting an effective influence on film nanohardness.

• Analytical Science and Technology
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• v.20 no.3
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• pp.251-254
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• 2007

In this study, a convenient, fast and accurate inductively coupled plasma atomic emission spectrometry (ICP-AES) method has been optimized for the determination of osmium in aqueous solutions. The method makes use of the reaction of sulfurous acid with osmium to quantitative conversion of volatile Os(VIII) to non-volatile Os(IV) in the pH range 2-10. The response was found to be stabilized immediately after sulfurous acid reacted with osmium. The precision was calculated to be 0.5-4.5 % (RSD) under various ICP-AES conditions. The detection limit was 2.5-57.7 ng/g based on $3{\sigma}$ of the blank response (n=3) using a concentric flow nebulization.

• Journal of the Korea Concrete Institute
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• v.24 no.1
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• pp.71-78
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• 2012

In order to improve the shear strength of conventional pre-tensioned spun high strength concrete (PHC) pile, concrete-infilled composite PHC (ICP) pile, a PHC pile reinforced by means of shear reinforcement and infilled concrete, is proposed. Two types of specimens were cast and tested according to KS (Korean Standards) to verify the shear strength enhancement of ICP pile. Based on the test results, it was found that the KS method was not suitable due to causing shear failure of ICP pile. However, shear strength enhancement was clearly verified. The obtained shear strength of the ICP pile was more than twice that of conventional PHC pile. In addition, the shear strength of ICP pile reinforced with longitudinal reinforcement was estimated to be more than 2.5 times greater than that of conventional PHC pile. The allowable shear force of ICP pile, which was determined by the allowable stress design process, indicated a large safety factor of more than 2.9 compared to the test results.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.98-98
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• 2000

초고집적(ULSI) 반도체 소자의 multilevel metalization을 위한 중간 유저네로서 저 유전상수(k<)와 높은 열적안정성(>45$0^{\circ}C$)을 갖는 새로운 물질을 도입하는 것이 필요하다. 중합체 박막은 낮은 유전상수와 높은 열적 안정성으로 인하여 low-k 물질로 적당하다고 여겨진다. PECVD에 의한 plasma polymer 박막의 증착은 많이 보고되어 왔으마 고밀도 플라즈마 형성이 가능하고 기판으로 유입되는 ion의 energy 조절이 가능한 inductively coupled plasma(ICP) CVD에 의한 plasma polymer 박막에 대한 연구는 보고된 바 없다. 본 연구에서는 Mtehyl-cyclohexane precusor를 사용하여 substrate에 bias를 주면서 inductively coupled plasma(ICP)를 이용하여 플라즈마 폴리머 박막(plasma polymerized methyl-cyclohexane : 이하^g , pp MCH라 칭함)을 증착하였으며 ICP power와 substrate bias(SB) power가 증착된 박막의 특성에 어떠한 영향을 미치는지 알아보았다. 증착된 박막의 유전상 수 및 열적 안정성은 ICP power의 변화에 비해 SB power의 변화에 더 크게 영향을 받았다.^g , pp MCH 박막은 platinum(Pt) 기판과 silicon 기판위에서 같이 증착되었다. Methyl-cyclohexane precursor는 4$0^{\circ}C$로 유지된 bubbler에 담겨지고 carrier 가스 (H2:10%, He:90%)에 의해 reactor 내부로 유입된다.^g , pp MCH 박막은 증착압력 350 mTorr, 증착온도 6$0^{\circ}C$에서 \circled1SB power를 10W에 고정시키고 ICP power를 5W부터 70W까지, \circled2ICP power를 10W에 고정시키고 SB power를 5W부터 70W까지 변화하면서 증착하였다. 유전 상수 및 절연성은 Al/PPMCH//Pt 구조의 capacitor를 만들어서 측정하였으며, 열적 안정성은 Ar 분위기에서 30분간의 열처리 전후의 두께 변화를 측정함으로써 분석하였다. SB power 10W에서 ICP power가 5W에서 70w로 증가함에 따라 유전상수는 2.65에서 3.14로 증가하였다. 열적 안정성은 ICP power의 증가에 따라서는 크게 향상되지 않은 것으로 나타났다. ICP power 10W에서 SB power가 5W에서 70W로 증가함에 따라 유전상수는 2.63에서 3.46으로 증가하였다. 열적 안정성은 SB power의 증가에 따라 현저하게 향상되었으며 30W 이상에서 증착된 박막은 45$0^{\circ}C$까지 안정하였고, 70W에서 증착된 박막은 50$0^{\circ}C$까지 안정하였다. 열적 안정성은 ICP power의 증가에 따라서는 현저하게 향상되었다. 그 원인은 SB power의 인가에 의해 활성화된 precursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.

• BMB Reports
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• v.50 no.5
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• pp.275-280
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• 2017

Herpes simplex virus type 1 ICP27 is a multifunctional protein responsible for viral replication, late gene expression, and reactivation from latency. ICP27 interacts with various cellular proteins, including Daxx. However, the role of interaction between ICP27 and Daxx is largely unknown. Since Daxx is known to repress $NF-{\kappa}B$ activity, there is a possibility that ICP27 may influence the inhibitory effect of Daxx on $NF-{\kappa}B$ activity. In this study, we tested whether ICP27 affects the $NF-{\kappa}B$ activity through its interaction with Daxx. Interestingly, ICP27 enhanced the Daxx-mediated repression of $NF-{\kappa}B$ activity. In addition, we found that sumoylation of Daxx regulates its interaction with p65. ICP27 binds to Daxx, inhibits Daxx sumoylation, and enhances p65 deacetylation induced by Daxx. Consequently, ICP27 represses the $NF-{\kappa}B$ activity, by elevating the inhibitory effect of Daxx on $NF-{\kappa}B$ activity through desumoylation of Daxx.

• KIPS Transactions on Software and Data Engineering
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• v.11 no.12
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• pp.525-530
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• 2022

Although the iterative closest point (ICP) algorithm has been widely used to align two point clouds, ICP tends to fail when the initial orientation of the two point clouds are significantly different. In this paper, when two triangular meshes A and B have significantly different initial orientations, we present an algorithm to align them. After obtaining weighted centroids for meshes A and B, respectively, vertices that are likely to correspond to each other between meshes are set as feature points using the distance from the centroid to the vertices. After rotating mesh B so that the feature points of A and B to be close each other, RMSD (root mean square deviation) is measured for the vertices of A and B. Aligned meshes are obtained by repeating the same process while changing the feature points until the RMSD is less than the reference value. Through experiments, we show that the proposed algorithm aligns the mesh even when the ICP and Go-ICP algorithms fail.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.298-301
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• 2000

We investigated the etch rate of SiO$_2$ in E-ICP, ICP system and the addition gas (O$_2$H$_2$) effect on SiO$_2$ etch characteristics. In all conditions, E-ICP shows higher etch rate than ICP. Small amount of O$_2$ addition increase F atom and O$\^$*/ concentration. at optimized condition (30％ O$_2$ in CF$_4$, 70Hz) E-ICP system shows highest etch rate (about 6000${\AA}$). H$_2$addition in CF$_4$ Plasma make abrupt decrease Si etch rate and moderate decrease SiO$_2$ etch rate.

• Journal of Institute of Control, Robotics and Systems
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• v.20 no.11
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• pp.1170-1174
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• 2014

This paper suggests using the ICP (Iterative Closet Point) algorithm to compensate a two-dimensional map. ICP algorithm is a typical algorithm method using matching distance data. When building a two-dimensional map, using data through the value of a laser scanner, it occurred warping and distortion of a two-dimensional map because of the difference of distance from the value of the sensor. It uses the ICP algorithm in order to reduce any error of line. It validated the proposed method through experiment involving matching a two-dimensional map based reference data and measured the two-dimensional map.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.158-162
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• 2001

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.279-286
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• 2008

Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.