• Title/Summary/Keyword: IPyC

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A Study on the CVD Deposition for SiC-TRISO Coated Fuel Material Fabrication (화학증착법을 이용한 삼중 코팅 핵연료 제조에 관한 연구)

  • Kim, Jun-Gyu;Kum, E-Sul;Choi, Doo-Jin;Kim, Sung-Soon;Lee, Hong-Lim;Lee, Young-Woo;Park, Ji-Yeon
    • Journal of the Korean Ceramic Society
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    • v.44 no.3 s.298
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    • pp.169-174
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    • 2007
  • TRISO coated fuel particle is one of the most important materials for hydrogen production using HTGR (high temperature gas cooled reactors). It is composed of three isotropic layers: inner pyrolytic carbon (IPyC), silicon carbide (SiC), outer pyrolytic carbon (OPyC) layers. In this study, TRISO coated fuel particle layers were deposited through CVD process in a horizontal hot wall deposition system. Also the computational simulations of input gas velocity, temperature profile and pressure in the reaction chamber were conducted with varying process variable (i.e temperature and input gas ratios). As deposition temperature increased, microstructure, chemical composition and growth behavior changed and deposition rate increased. The simulation showed that the change of reactant states affected growth rate at each position of the susceptor. The experimental results showed a close correlation with the simulation results.

Effect of Deposition Temperature on the Property of Pyrolytic SiC Fabricated by the FBCVD Method (유동층 화학기상증착법을 이용하여 제조된 열분해 탄화규소의 특성에 미치는 증착온도의 영향)

  • Kim, Yeon-Ku;Kim, Weon-Ju;Yeo, SungHwan;Cho, Moon-Sung
    • Journal of Powder Materials
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    • v.21 no.6
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    • pp.434-440
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    • 2014
  • Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

Development of Micro Tensile Test of CVD-SiC coating Layer for TRISO Nuclear Fuel Particles at elevated temperature

  • Lee, Hyun-Min;Park, Kwi-Il;Kim, Do-Kyung
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.95.1-95.1
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    • 2012
  • Very High Temperature gas cooler Reactor (VHTR) has been considered as one of the most promising nuclear reactor because of many advantages including high inherent safety to avoid environmental pollution, high thermal efficiency and the role of secondary energy source. The TRISO coated fuel particles used in VHTR are composed of 4 layers as OPyC, SiC, IPyC and buffer PyC. The significance of CVD-SiC coatings used in tri-isotropic(TRISO) nuclear coated fuel particles is to maintain the strength of the whole particle. Various methods have been proposed to evaluate the mechanical properties of CVD-SiC film at room temperature. However, few works have been attempted to characterize properties of CVD-SiC film at high temperature. In this study, micro tensile system was newly developed for mechanical characterization of SiC thin film at elevated temperature. Two kinds of CVD-SiC films were prepared for micro tensile test. SiC-A had [111]-preferred orientation, while SiC-B had [220]-preferred orientation. The free silicon was co-deposited in SiC-B coating layer. The fracture strength of two different CVD-SiC films was characterized up to $1000^{\circ}C$.The strength of SiC-B film decreased with temperature. This result can be explained by free silicon, observed in SiC-B along the columnar boundaries by TEM. The presence of free silicon causes strength degradation. Also, larger Weibull-modulus was measured. The new method can be used for thin film material at high temperature.

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Spherical UO2 Kernel and TRISO Coated Particle Fabrication by GSP Method and CVD Technique (겔침전과 화학증착법에 의한 구형 UO2 입자와 TRISO 피복입자 제조)

  • Jeong, Kyung-Chai;Kim, Yeon-Ku;Oh, Seung-Chul;Cho, Moon-Sung
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.590-597
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    • 2010
  • HTGR using a TRISO coated particles as nuclear raw fuel material can be used to produce clean hydrogen gas and process heat for a next-generation energy source. For these purposes, a TRISO coated particle was prepared with 3 pyro-carbon (buffer, IPyC, and OPyC) layers and 1 silicone carbide (SiC) layer using a CVD technique on a spherical $UO_2$ kernel surface as a fissile material. In this study, a spherical $UO_2$ particle was prepared using a modified sol-gel method with a vibrating nozzle system, and TRISO coating fabrication was carried out using a fluidized bed reactor with coating gases, such as acetylene, propylene, and methyltrichlorosilane (MTS). As the results of this study, a spherical $UO_2$ kernel with a sphericity of 1+0.06 was obtained, and the main process parameters in the $UO_2$ kernel preparation were the well-formed nature of the spherical ADU liquid droplets and the suitable temperature control in the thermal treatment of intermediate compounds in the ADU, $UO_3$, and $UO_2$ conversions. Also, the important parameters for the TRISO coating procedure were the coating temperature and feed rate of the feeding gas in the PyC layer coating, the coating temperature, and the volume fraction of the reactant and inert gases in the SiC deposition.