• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.1
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• pp.83-90
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• 1986

A micro pH-ISFET probe, which can be applied to the in vivo measurements of the hydrogen ion concentration in blood, has been developed, and a measuring system equiped with this probe also developed. The pH-ISFET has been fatricated by employing the techniques of integrated circuit fabrication. Two kinds of micro electrode formed around the sensing gate during the wafer process, and the other is a capillary type of Ag/AfCl/sat. KCI reduced in size. This capillary electrode has shown its good performance characteristics so far in the application with ISFET as well as a commercial one. In order to form a micro pH-ISFET probe, this pH-ISFET and well as a commercial one. In order to form a micro pH-ISFET probe, this pH-ISFET and the capillary electrode were built together into a needle tip having 1 mm inner diameter. The chip size of a twin pH-ISFET is 0.8 mmx1.4 mm, the material of the sensing gate membrane is Si3N4, and the sensitivity of the developed probe is about 52mV/pH.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.284-284
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• 2011

Ion sensitive field effect transistor (ISFET)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 metal oxide semiconductor field effect transistor (MOSFET)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액의 수소이온이 막의 표면에 속박되어 표면전위의 변화를 유발하는 것에 기인한다. 그 결과, 수소이온의 농도에 따라 ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. 한편, ISFET의 좋은 pH감지특성과 높은 출력특성을 얻기 위하여 high-k물질들이 감지막으로써 지속적으로 연구되어져 왔다. 그 중 Al2O3와 HfO2는 높은 유전상수와 좋은 pH 감지능력으로 인하여 많은 연구가 이루어져온 물질이다. 하지만 HfO2는 높은 유전상수를 갖음에도 불구하고 화학용액에 대한 non-ideal 효과에 취약하다는 보고가 있다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 본 연구에서는, 이러한 각각의 high-k 물질들의 단점을 보안하기 위하여 SiO2/HfO2/Al2O3(OHA) 적층막을 이용한 ISFET pH 센서를 제작하였으며 SOI 기판에서 구현되었다. SOI기판에서 OHA 적층막을 이용한 ISFET 제작이 이루어짐에 따라서 소자의 signal to noise 비율을 증대 시킬것으로 기대된다. 실제로 SOI-ISFET와 같이 제작된 SOI-MOSFET는 1.8${\times}$1010의 높은 on/off 전류 비율을을 보였으며 65 mV/dec의 subthreshold swing 값을 갖음으로써, 우수한 전기적 특성을 보이는 ISFET가 제작이 되었음을 확인 하였다. OHA 감지 적층막의 각 층은 양호한 계면상태, 높은 출력특성, 화학용액에 대한non-ideal 효과에 강한 immunity을 위하여 적층되었다. 결론적으로 SOI과 OHA 적층감지막을 이용하여 우수한 pH 감지 특성을 보이는 pH 센서가 제작되었다.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.15-20
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• 1996

The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFET to vary with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing tile drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about $70{\AA}$ thick by sol-gel method on $Si_{3}N_{4}/SiO_{2}$-gate of pH-ISFET. The fabricated $Ta_{2}O_{5}$-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH $3{\sim}11$, and had relatively small average pH drift of about 0.06 pH/day.

• Analytical Science and Technology
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• v.5 no.2
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• pp.177-184
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• 1992

A preparation method and response characteristics of a glucose sensor which consisted of pH-ISFET and glucose oxidase-immobilized membrane were investigated. The pH-ISFET glucose sensor was fabricated by immbilizing bovine serum albumin and glucose oxidase with glutaraldehyde on gate of the pH-ISFET. Effects of pH and concentration of working buffer and enzyme load on the pontentiometric response of the pH-ISFET glucose sensor were examined. Response characteristics for the determination of glucose in synthetic physiological saline solution(pH 7.4) were as follows. That is the concentration range of linear response, slope of linear response(sensitivity), and response time were $1.0{\times}10^{-4}{\sim}6.0{\times}10^{-3}M $, 4.1 mV/decade, and 12~15 min., respectively.

• Journal of the Korean Chemical Society
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• v.36 no.4
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• pp.496-503
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• 1992

An ISFET urea sensor was fabricated by immobilizing the urease using photosensitive polymer, poly(vinyl alcohol)-SbQ on the H$^+$ sensing $Si_3$$N_4$ thin film of pH-ISFET. The sensor could determine the urea concentration in the range of 1∼50 mg/dl with fast response and good repeatability. For its application to clinical analysis, the interferences of the various materials which cause inhibition in urease catalytic reactions in blood was investigated. The results of the urea measurements in blood plasma using the ISFET urea sensor were compared with these of conventional spectrophotometric method.

• Journal of the Korean Chemical Society
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• v.36 no.6
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• pp.864-871
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• 1992

A preparation method and response characteristics of a urea sensor which consisted of pH-ISFET and urease-immobilized membrane were investigated. The pH-ISFET urea sensor was fabricated by immobilizing BSA and urease with glutaraldehyde on gate of the pH-ISFET. Effects of pH and concentration of working buffer and enzyme load on the pontentiometric response of the pH-ISFET urea sensor were examined. Response characteristics for the determination of urea in synthetic physiological saline solution (pH 7.4) were as follows. That is, the concentration range of linear response, slope of linear response (sensitivity), and response time were 5.0 ${\times}$ $10^{-4}$ ${\sim}$ 5.0 ${\times}$ $10^{-2}$M, 31.6 mV/decade and 4${\sim}$10 min, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.239-239
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• 2013

For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.85-92
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• 1992

A new potassium sensitive field effect transistor modified with 4'-aminobenzo-15-crown-5 was prepared and its response characteristics were evaluated. The response slope of $K^{+}-ISFET$ for pH was 30.0 mV/decade and the response time was mere than 3 minutes. And the response slope and time of the $K^{+}-ISFET$ for potassium ion as $19.5{\pm}0.2{\;}mV/decade$ and about 3 minutes, respectively. The linear response range of the sensor for potassium ion was $2.0{\times}10^{-4}{\sim}1.0{\times}10^{-2}M$. The selectivity coefficients of the $K^{+}-ISFET$ for the alkali and alkaline earth metal ions were also evaluated. Sodium, ammonium and calcium ions exhibited relatively significant interference. The long term stability of the sensor was remarkably improved and it could be used for more than 50 days.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.129-129
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• 2011

ISFET (ion sensitive field effect transistor)는 용액 중의 각종 이온 농도를 측정하는 반도체 이온 센서이다. ISFET는 작은 소자 크기, 견고한 구조, 즉각적인 반응속도, 기존의 CMOS공정과 호환이 가능하다는 장점이 있다. ISFET의 기본 구조는 기존의 MOSFET (metal oxide semiconductor field effect transistor)에서 고안되었으며, ISFET는 기존의 MOSFET의 게이트 전극 부분이 기준전극과 전해질로 대체되어진 구조를 가지고 있다. ISFET소자의 pH 감지 메커니즘은 감지막의 표면에서 pH용액 속의 이온들이 감지막의 표면에서 속박되어 막의 표면전위의 변화를 유발하는 것을 이용한다. 그 결과, ISFET의 문턱전압의 변화를 일으키게 되고 드레인 전류의 양 또한 달라지게 된다. ISFET의 높은 pH감지능력을 얻기 위하여 높은 high-k물질 들이 감지막으로서 연구되었다. Al2O3와 HfO2는 높은 유전상수, non-ideal 효과에 대한 immunity 그리고 높은 pH 감지능력 등 많은 장점을 가지고 있는 물질로 알려졌다. 본 연구에서는, SiO2/HfO2/Al2O3 (OHA) 적층막을 이용한 EIS (electrolyte- insulator-silicon) pH센서를 제작하였다. EIS구조는 ISFET로의 적용이 용이하며 ISFET보다 제작 방법과 소자 구조가 간단하다는 장점이 있다. HfO2은 22~25의 높은 유전상수를 가지며 높은 pH 감지능력으로 인하여 감지막으로서 많은 연구가 이루어지고 있는 물질이다. 하지만 HfO2의 물질이 가진 고유의 특성상 화학적 용액에 대한 non-ideal 효과는 다른 금속계열 산화막에 비하여 취약한 모습을 보인다. 반면에 Al2O3의 유전상수는 HfO2보다 작지만 화학용액으로 인한 손상에 대하여 강한 immunity가 있는 재료이다. 이러한 물질들의 성질을 고려하여 OHA의 새로운 감지막의 적층구조를 생각하였다. 먼저 Si과 high-k물질의 양호한 계면상태를 이루기 위하여 5 nm의 얇은 SiO2막을 완충막으로서 성장시켰다. 다음으로 높은 유전상수를 가지고 있는 8 nm의 HfO2을 증착시킴으로서 소자의 물리적 손상에 대한 안정성을 향상시켰다. 최종적으로 화학용액과 직접적인 접촉이 되는 부분은 non-ideal 효과에 강한 Al2O3을 적층하여 소자의 화학적 손상에 문제점을 개선시켰다. 결론적으로 감지막의 적층 모델링을 통하여 각각의 high-k 물질이 가진 고유의 특성에 대한 한계점을 극복함으로써 높은 pH 감지능력뿐만 아니라 신뢰성 있는 pH 센서가 제작 되었다.

• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.271-278
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• 1998

A ISFET-based glucose sensor has inherent problems such as low sensitivity, drift effect and long response time. For that reason, a amperometric actuation technique was introduce to make a highly sensitivity of the ISFET glucose sensor with a Pt actuator, which electrolyzes $H_2O_2$, one of the by a by-products of the oxidation reaction of glucose. Moreover, a potential-step measurement method detecting response by only the electrolysis of $H_2O_2$ was developed for eliminating a drift problem. The operation characteristics of ISFET-based glucose sensor was improved by using the amperometric actuation and a measurement techniques. The fabricated ISFET glucose sensor is shown good operation such as characteristics(30mM PBS, about 26mV/decade) and linearity. A portable glucose meter with a highly resolution by using the fabricated ISFET-based glucose sensor with Pt actuation was developed and its characteristics investigated.