• Korean Journal of Materials Research
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• v.12 no.8
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• pp.661-668
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• 2002

A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.772-775
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• 2009

Indium tin oxide(ITO) thin film was deposited at room temperature on polycarbonate(PC) substrate by in-line sputter system. ITO sputtering process was carried out at a various pressure for the reduction of ion damage on PC substrate and the electrical and the optical properties of deposited ITO films were obtained and analyzed. From the experimental results, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances at visible wavelength were maintained above 85%. The results are considered to be related to the pressure of oxygen atoms as a reaction gas.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.176-176
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.167.2-167.2
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• 2016

태양에너지는 전자기파로써 파장에 따라 여러 부분으로 나뉜다. 파장이 780nm 이상인 부분의 영역을 IR (infra Red) 즉 적외선으로 불린다. 이 부분이 열선에 해당하는 부분인데 대부분의 창문에 설치된 커튼이나 vertical 등은 빛을 차단하는 수단일 뿐, 유입되는 열 (적외선)을 차단시킬 수는 없다. 열은 결국 실내의 온도를 높이기 때문에 난방비 등 에너지 손실을 막긴 어렵다. 단열필름은 커튼이나 vertical과 달리 실내로 유입되는 열 (적외선)을 다시 실외로 반사시켜 실내로 유입되는 열을 최소화 한다. 본 연구는 IR 차폐를 목적으로 연구 되었고, 거기서 한 발 나아가 실내 분위기 등을 고려하여 소비자의 구호에 맞는 제품에 더 맞추기 위해 연구되었다. 기존 제품들과 차별된 점은 색상을 위한 추가적인 작업없이 굴절률과 두께 factor 등을 변화시켜 바로 7가지 색을 구현한다는 장점을 가지고 있다. 따라서 가격 경쟁력에서도 우위를 점 할 수 있는 중요한 기술이라 할 수 있겠다. 박막제조 장비로는 DC pulse In-line Sputter를 사용하였으며, 굴절률과 광학적인 두께 측정을 위한 ellipsometer, 그리고 UV-vis 를 통한 Transmittance 측정으로 제품 능력을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1542-1545
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• 2009

For the application of flexible substrate to future display and new transparent devices, indium tin oxide (ITO) thin film was formed on polycarbonate(PC) substrate at room temperature by in-line sputter system. During the ITO sputtering, Ar and $O_2$ reaction gas were fixed at a constant value and the process pressure was varied from 3 to 7 mtorr. From the electrical and the optical properties of sputtered ITO films, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances of the ITO films at visible wavelength were maintained above 85%. The results are considered to be due to the saturation of $O_2$ atoms from reaction in ITO film.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.123-132
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• 2000

Cerium substituted YIG thin films were grown by rf magnetron sputter techniques. We investigated the effects of post-deposition heat-treatment as well as various deposition parameters such as substrate materials, substrate temperature. sputter power, and sputter gas types on the crystallinity, chemical composition, microstructure and magnetic characteristics of the films. Post-deposition heat treatment over 750 $\^{C}$ was applied to crystallize as-prepared amorphous films, and a strong tendency of particular crystallographic planes tying parallel to substrate surface was observed for the post-deposition heat-treated films on GGG substrate. The chemical composition of the films exhibited a wide range of chemical stoichiometry depending on the oxygen fraction of sputter gas, and in particular the composition of the film deposited in sputter gas with an oxygen fraction of R = 10% was Ce$\_$0.23/Y$\_$1.30/Fe$\_$3.50/O$\_$12/. With raising the temperature of post-deposition heat-treatment from 900 $\^{C}$ to 1100 $\^{C}$, the surface roughness of the film on GGG substrates increased from about 3 nm to 40 nm, but their coercive force and ferromagnetic resonance line width decreased from 0.477 kA/m to 0.369 kA/m and from 12.5 kA/m to 8.36 kA/m, respectively.

• Journal of the Korean institute of surface engineering
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• v.42 no.5
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• pp.216-219
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• 2009

A surface acoustic wave (SAW) filter structure was fabricated employing $4{\mu}m$ thick nanocrystalline diamond (NCD) and $2.2{\mu}m$ thick ZnO films on Si wafer. The NCD film was deposited in an $Ar/CH_4$ gas mixture by microwave plasma chemical vapor deposition method. The ZnO film was formed over the NCD film in an RF magnetron sputter using ZnO target and $Ar/O_2$ gas. On the top of the two layers, copper film was deposited by the RF sputter and inter digital transducer (IDT) electrode pattern (line/space : $1.5/1.5{\mu}m$) was defined by the photolithography including a lift-off etching process. The fabricated SAW filter exhibited the center frequency of 1.66 GHz and the phase velocity of 9,960 m/s, which demonstrated that a giga Hertz SAW filter can be realized by utilizing the nanocrystalline diamond thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.188-188
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.742-745
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• 2004

A profitable mass production of Organic Light Emitting Diode (OLED) displays needs a new type of manufacturing equipment. We have developed a vertical In-Line machine (VES400) equipped with linear etch sources (e.g. to activate an ITO layer), standard magnetron sputter sources for ITO and metal and linear evaporation sources for the organic and metal materials. We present new results concerning the linear evaporation sources for organic materials. We have optimized the vertical thickness non uniformity for the evaporation of different organic materials and achieved deviations of less than ${\pm}$ 5 % for the vertical thickness over a substrate height of 400 mm. We will further report first results about the long term stability of the deposition rate for different organic materials using rate control..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.167-171
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• 1995

The orientation dependence of sputtering rate in the sendust polysrystalline targets was studied, It was fount from the present work that the erosion process is not uniform from one grain to another even within a target because of its polysrystalline nature showing many different orientation of grains. The grains oriented to promote efficient erosion were characterized by the close-packed planes which have large interplanar spacing and strong binding energy, The characteristic line patterns appeared on as-sputter target surface are discussed in terms of symmetry of crystllographic planes.