• Environmental Engineering Research
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• v.17 no.2
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• pp.65-67
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• 2012

The desorption characteristics of previously adsorbed indium ions on phosphorylated sawdust were tested by various chemical reagents such as HCl, $HNO_3$, NaCl, ethylenediaminetetraacetic acid, and nitrilotriacetic acid. Among them, HCl was chosen as the best desorbing agent in terms of economics. The desorption efficiency of HCl for indium ions was about 97% at a concentration of 0.5 M. The desorption efficiency for indium ions was very high at about 94% even at a solid/liquid ratio of 10.0, and the desorption process was quickly performed within 60 min. The removal efficiency of indium ions in recycled phosphorylated sawdust could be maintained at 85% in the 4th cycle.

• Journal of Electrochemical Science and Technology
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• v.3 no.1
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• pp.1-13
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• 2012

Many researchers focus on indium contained semiconductors and alloy compounds for their various applications. Electrochemists want to obtain indium contained compounds simply via one-step electrodeposition. First of all, electrochemistry of constituent elements must be understood in order to develop the best condition for the electrodeposition of indium contained compounds. We will review the electrochemistry of indium. Equilibria between indium metal and indium ions and the standard electrode potentials of the equilibria will be reviewed. The electrochemical reactions of indium species are affected by surrounding conditions. Thus dependences of electrochemical behaviors of indium metal and indium ions on various parameters will be reviewed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1153-1159
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• 2013

A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from $3{\times}10^{-7}$ to $1{\times}10^{-2}$ M and a lower detection limit (LDL) of $1{\times}10^{-7}$ M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

• Analytical Science and Technology
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• v.6 no.1
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• pp.131-139
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• 1993

The separation of gallium and indium from the matrix elements such as zinc and other ions, especially form Fe(III) ion was studied for the determination of trace level of them in zinc ores and zinc blendes by inductively coupled plasma atomic emission spectrometry(ICP-AES). Gallium and indium were extracted from the sample solution with a solvent of tributyl phosphate(TBP). The type and concentration of acid, interferences of other ions, the ratio of aqueous phase to organic phase, TBP concentration, sripping efficiency were optimized for the effective extraction. Gallium and indium were separated from other ions in the 5N hydrochloric acid solution of the samples by the extraction with 100% TBP. In this time, Fe(III) was reduced to Fe(II) with hydroxylamine hydrochloride to prevent its coextraction prior to the main extraxtion. After stripped from organic phase by the back-extraction with 0.02N HCl, they were determined in the aqueous phase by ICP-AES. This method was known to be quantitative from the overall extraction of more than 95%.

• Journal of Magnetics
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• v.10 no.1
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• pp.23-27
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• 2005

The crystallographic and magnetic properties of a series of substitutions in nickel ferrite where the Fe³⁺ is replaced with In³⁺ have been investigated using X-ray diffraction (XRD) and Mössbauer spectroscopy. Information on the exact crystalline structure, lattice parameters, bond lengths and bond angles were obtained by refining their XRD profiles by a Rietveld method. All the crystal structures were found to be cubic with the space group Fd/3m. The lattice constants increased with In³⁺ concentration. The expansion of the tetrahedron was outstanding, indicative of the tetrahedral (A) site preference of larger indium ion. The Mossbauer spectra showed two sets of sextuplet originating from ferric ions occupying the tetrahedral sites and the octahedral (B) sites under the Neel temperature T_N. Regardless of the composition x, the electric quadrupole splitting was zero within the experimental error. At x = 0.2, the magnetic hyperfine fields increased slightly, which meant that the nonmagnetic indium ions occupied preferentially the A-site. At the same time, the intensity of the B-site sub-spectra decreased markedly at the elevated temperature, indicating that the occupation of the A site by indium induced a considerable perturbation on the B site.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.165-172
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• 1992

To determine the effect of additions of trivalent and pentavalent ions on the electrical conductivity and sensing behaviour, indium and antimony were incorporated in tin oxide by the coprecipitation method. Antimony may be considered to enter the cassiterite structure as pentavalent ions, thermal energy could excite electrons from these ions into the conduction band. Similarly the indium ions would enter the lattice as $In^{3+}$ but could accept electrons from the valence band, thereby becoming monovalent or divalent. These phenomena, however, how the potential barrier existing $SnO_{2}$ by addition of two kinds of ions could influence on the sensing behaviour in comparison with their influence on the resistivity were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.2-293.2
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• 2016

The In this paper, we have fabricated the solution processed In-Ga-ZnO thin film transistors (IGZO TFTs) by varying indium and gallium ratio. The indium ratio of IGZO TFTs was changed from 1 to 5 at fixed gallium and zinc oxide atomic percent of 1:1 and gallium ratio was varied from 1 to 5 at fixed indium and zinc oxide atomic percent of 1:1. When the indium ratio was increased at fixed gallium and zinc oxide ratio of 1:1, threshold voltage was negatively shifted from 1.03 to -6.18 V and also mobility was increased from 0.018 to $0.076cm2/V{\cdot}sec$. It means that the number of carriers in IGZO TFTs were increased due to great formation of the oxygen vacancies which generate electrons. In contrast, when the gallium ratio was increased in IGZO TFTs with indium and zinc oxide ration of 1:1, the on/off current ratio was increased from $1.88{\times}104$ to $2.22{\times}105$. It is because gallium have stronger chemical bonds with oxygen than that with the zinc and indium ions that lead to the decreased in electron concentration.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1999-2003
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• 2014

Indium tin oxide ($In_2Sn_{1-x}O_{5-y}$) nanoparticles were synthesized by hydrothermal method from stable indium tin acetylacetone complexes and postannealing at $600^{\circ}C$. The absence of chlorine ions shortened the synthesis process, decreased the particle agglomeration and improved the particle purity. The introduced complexing ligand acetylacetone decreased the obtained nanoparticle size. The improved powder properties accelerated the sintering of the $In_2Sn_{1-x}O_{5-y}$ nanoparticles and reached a relative density of 96.4% when pressureless sintered at $1400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.