• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.271-272
• /
• 2007

Displacement current $(I_{dis})$ and drain-to-source current $(I_{DS})$ are evaluated using the simultaneous measurements of source $(I_S)$ and drain $(I_D)$ currents during the application of a constant drain voltage and a triangular-wave gate voltage $(V_{GS})$ to top-contact pentacene thin-film transistors.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.12
• /
• pp.77-87
• /
• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.3
• /
• pp.169-172
• /
• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• Journal of the Korean Geotechnical Society
• /
• v.33 no.11
• /
• pp.45-57
• /
• 2017

Temperature change affects consolidation behavior of soft clays. The increase of temperature in soft clays induces the increase of pore water pressure. The dissipation of the excess pore water pressure decreases volume and void ratio. Also, the consolidation rate is accelerated by high temperature which induces the decrease of viscosity of pore fluid. The effects of temperature on the consolidation behavior such as consolidation settlement, consolidation time, and pore water pressure were investigated in this study. A numerical analysis of hydro-mechanical (HM) and thermo-hydro-mechanical (THM) behavior was performed. The combination of heat injection and sand drain for consolidating the soft ground, with varying temperature (40 and $60^{\circ}C$) and sand drain diameter (40, 60, and 80 mm), was considered. The results show that the temperature inside soil specimen increases with the increase of the temperature of heating source and the diameter of sand drain. Moreover, the heat injection increases the excess pore water pressure and, accordingly, induces additional settlement in overconsolidated (OC) state and reduces the consolidation time in normally consolidated (NC) state.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.2
• /
• pp.36-45
• /
• 1993

The n-channel MOSFETs with gate-$n^{-}$S/D overlapped structure have been fabricated by ITLDD(inverse-T gate lightly doped drain) technology. The gate length(L$_{mask}$) was 0.8$\mu$m. The degradation effects of hot carriers injected into the gate oxide were analyzed in terms of threshold voltage, transconductance and drain current variations. The degradation dependences on the gate voltage and drain voltage were characterized. The devices with higher n-concentration showed higher resistivity against the hot carrier injection. As the results of investigating the lifetime of the device, the lifetime showed longer than 10 years at V$_{d}$ = 5V for the overlapped devices with the implantation of an phosphorus dose of 5$\times$10$^{13}$ cm$^{-2}$ and an energy of 80 keV in the n$^{-}$resion.

• Journal of the Korean Geotechnical Society
• /
• v.17 no.6
• /
• pp.53-67
• /
• 2001

In this study the pilot test of CGS as injection method by low slump mortar was performed and the results were analyzed in order to find out the application of this method and effect of settlement restraint. The site far pilot test is adjacent to apartments supported by pile foundations. Sand drain method was performed previously as countermeasures against settlement, but settlement occur continuously because this ground is very soft. Site investigations such as SPT, DCPT and vane shear test were performed to determine the characteristics of ground improvement. Field measurements and FDM analysis were performed on purpose to find out the displacement of ground during injection works. From the results of this study, CGS method can be optimized by the control of diagram, space, depth, injection material, and injection pressure. CGS improved soft ground compositely by the bearing effect of CGS columns and reinforcement of adjacent ground. Considering that increase of N value is about 2.1, CGS can be considered as an effective method to increase the bearing capacity as well as to stop the settlement of soft ground. It is also expected to be economic and effective in improvement of ground when it is used in applicable sites.

• Design & Manufacturing
• /
• v.11 no.2
• /
• pp.1-8
• /
• 2017

In this study, we applied microcellular foaming injection molding process to improve the performance of system air-conditioner drain fan which had been produced by injection molding process and studied the optimization of process conditions through 6-sigma process and response surface method (RSM) to reduce weight and deformation of products. Additive type, melt temperature, mold temperature, and injection screw shape were selected as the factor affecting the weight and deformation of the products by carrying out analysis of trivial many through ANOVA and design of experiment (DOE) method. Among the effect factor, we set the addictive type to Long G/F and screw shape to foaming screw which had the highest level of weight reduction and deformation reduction. The amount of foaming agent gas was set at 60 ml, which was the limit beyond which the weight of product did not decrease any more. For melt temperature and mold temperature, we studied the conditions where both weight and deformation were minimized using the RSM. As a result, we set the melt temperature to $250^{\circ}C$, fixed mold temperature to $20^{\circ}C$, and moving mold temperature to $40^{\circ}C$. The improvement effect was analyzed by appling the selected optimal conditions to the production process using the microcellular foaming injection molding. The results showed that the mean weight of product was measured to be 1,420g which was 19% lower than that measured in the current process. The standard deviations of the weights were found to be similar to those in the current process and it showed a low dispersion. The mean deformation was measured to be 0.9237mm, which represented a 57% reduction compared to the mean deformation in the current process, and the standard deviation decreased from 0.3298mm to 0.1398mm. Moreover, we analyzed the process capability for deformation, and the results showed that the short-term process capability increased from 2.73 to 6.60 which was even higher than targeted level of 6.0.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.270-271
• /
• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.08a
• /
• pp.162-163
• /
• 2000

We have observed the short-channel effect, narrow-channel effect and small-geometry effect in terms of a variation of the threshold voltage. For a short-channel effect the threshold voltage was largely determined by the DIBL effect which stimulates more carrier injection in the channel by reducing the potential barrier between the source and channel. The effect becomes more significant for a shorter-channel device. However, the potential, field and current density distributions in the channel along the transverse direction showed a better uniformity for shorter-channel devices under the same voltage conditions. The uniformity of the current density distribution near the drain on the potential minimum point becomes worse with increasing the drain voltage due to the enhanced DIBL effect. This means that considerations for channel-width effect should be given due to the variation of the channel distributions for short-channel devices. For CCDs which are always operated at a pinch-off state the channel uniformity thus becomes significant since they often use a device structure with a channel length of > 4 ${\mu}{\textrm}{m}$ and a very high drain (or diffusion) voltage. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.450-453
• /
• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.