• 제목/요약/키워드: Interfacial Layers

검색결과 216건 처리시간 0.023초

이중 나노 계면층을 적용한 고효율 고분자 태양 전지 소자 연구 (Nanoscale Double Interfacial Layers for Improved Photovoltaic Effect of Polymer Solar Cells)

  • 이영인;박병주
    • 한국전기전자재료학회논문지
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    • 제24권1호
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    • pp.70-75
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    • 2011
  • We introduced nanoscale interfacial layers between the PV layer and the cathode in poly (3-hexylthiophene):methanofullerene bulk-heterojunction polymer photovoltaic (PV) cells. The nanoscale double interfacial layers were made of ultrathin poly (oxyethylenetridecylether) surfactant and low-work-function alloy-metal of Al:Li layers. It was found that the nanoscale interfacial layers increase the photovoltaic performance, i.e., increasing short-circuit current density and fill factor with improved device stability. For PV cells with the nanoscale double interfacial layers, an increase in power conversion efficiency of $4.18{\pm}0.24%$ was achieved, compared to that of the control devices ($3.89{\pm}0.08%$) without the double interfacial layers.

Improvement of hole transport from p-Si with interfacial layers for silicon solar cells

  • Oh, Gyujin;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.239.2-239.2
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    • 2016
  • Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

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Interfacial Layer Control in DSSC

  • Lee, Wan-In
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.75-75
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    • 2011
  • Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

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방사광 x-선 기법에 의한 다층형 Fe/Cr 자성박막의 계면확산 연구 (Interfacial Diffusion in Fe/Cr Magnetic Multilayers Studied by Synchrotron X-ray Techniques)

  • 조태식
    • 한국전기전자재료학회논문지
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    • 제17권2호
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    • pp.223-227
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    • 2004
  • We have studied the interfacial diffusion of Fe/Cr multilayers using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and high-resolution x-ray scattering. The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers increased with the Cr-layer thickness. The Fourier transform (FT) of EXAFS data clearly showed that the Fe atoms dominantly diffused into the stable Cr layers at the Fe/Cr interface. The results of high-resolution x-ray scattering supported the interfacial diffusion of Fe atoms. Out study revealed that the dominantly interfacial diffusion of Fe atoms into the Cr layers effects the interfacial roughness of the Fe/Cr multilayers.

다층형 Fe/Cr 자성박막에서 계면확산의 방사광 x-선 연구 (Interfacial diffusion in Fe/Cr magnetic multilayers studied by synchrotron x-ray techniques)

  • 조태식;정지욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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    • pp.84-87
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    • 2003
  • The interfacial diffusion in Fe/Cr/MgO(001) multilayers has been studied using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and anomalous x-ray scattering (AXS). The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers with Cr-$4{\AA}$-thick was larger than that with Cr-$4{\AA}$-thick. The results of EXAFS indicated that the Fe element dominantly diffuse into the stable Cr layers at the Fe/Cr interface. The AXS was certified the existence of the interdiffused Fe element in the Cr layers. Our study revealed that the rough interface of the Fe/Cr multilayers was caused by the interfacia diffusion of Fe element into the Cr layers.

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Influence of temperature on the beams behavior strengthened by bonded composite plates

  • Bouazza, Mokhtar;Antar, Kamel;Amara, Khaled;Benyoucef, Samir;Bedia, El Abbes Adda
    • Geomechanics and Engineering
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    • 제18권5호
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    • pp.555-566
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    • 2019
  • The purpose of this paper is to investigate the thermal effects on the behaviour reinforced-concrete beams strengthened by bonded angle-ply laminated composites laminates plate $[{\pm}{\theta}n/90m]_S$. Effects of number of $90^{\circ}$ layers and number of ${\pm}{\theta}$ layers on the distributions of interfacial stress in concrete beams reinforced with composite plates have also been studied. The present results represent a simple theoretical model to estimate shear and normal stresses. The effects the temperature, mechanical properties of the fibre orientation angle of the outer layers, the number of cross-ply layers, plate length of the strengthened beam region and adhesive layer thickness on the interfacial shear and normal stresses are investigated and discussed.

Interfacial Layers for High Efficiency Polymer Solar Cells

  • Kim, Youn-Su;Choi, Ha-Na;Son, Seon-Kyoung;Kim, Ta-Hee;Kim, Bong-Soo;Kim, Kyung-Kon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.74-74
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    • 2011
  • Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting C60 derivatives are mixed together. In the BHJ system the electron donating polymer and electron accepting C60 derivatives are blended. The blended system causes charge recombination at the interface between the BHJ active layer and electrode. To reduce the charge recombination at the interface, it is needed to use an interlayer that can selectively transfer electrons or holes. We have developed solution processable wide band gap inorganic interfacial layers for polymer solar cells. The effect of interlayers on the performance of polymer solar cell was investigated for various types of conjugated polymers. We have found that inorganic interfacial layers enhanced the solar cell efficiency through the reduction of charge recombination at the interface between active layer and electrode. Furthermore, the stability of the polymer solar cell using the interlayer was significantly improved. The efficiency of 6.5% was obtained from the PTB7:PCBM70 based solar cells utilizing $TiO_2$nanoparticles as an interlayers.

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고무층간 가교정도가 접착강도 및 파괴형태에 미치는 영향 (Effect of Degree of Interfacial Interlinking on Adhesive Strength and Fracture Morphology of Rubber Layers)

  • 김현재;강신영;나창운
    • Elastomers and Composites
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    • 제34권1호
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    • pp.31-44
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    • 1999
  • 4종류의 고무(NR, SBR, EPDM, BIMS)에 대해 완전가교 고무층과 부분가교 고무층간 계면 결합의 변화에 따른 계면 접착강도를 $30{\sim}120^{\circ}C$ 조건에서 조사하였고, 전자현미경을 이용하여 접착파단면을 조사하였다. 두 개의 완전가교 고무층간 계면에서는 물리적 결합이 계면 접착강도에 주도적인 역할을 하였고, 완전가교 고무층과 부분가교 고무층간 계면에는 물리적 결합과 화학적 결합이 공존하여 계면 접착강도에 영향을 미쳤다. 접착강도가 응집 인열강도와 유사한 수준으로 높을 때 NR은 "계면 노티인열" 형태를, EPDM은 "cross-hatched" 형태를 보였다.

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반도성 세라믹스에서 복소임퍼던스 공진법을 이용한 전기적 특성의 평가 (Evaluation of Electrical Characteristics on Semiconducting Ceramics Using Complex Impedance Resonance Method)

  • 윤상옥;정형진;윤기현
    • 한국세라믹학회지
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    • 제31권8호
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    • pp.869-873
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    • 1994
  • Electrical properties of each interfacial layers on semiconducting ceramics have been analized and evaluated by complex impedance resonance method as functions of ambient temperatures and applied voltages. From the analytical results, it can be observed that the interfacial layers in a semiconducting ceramics vary individually with the ambient temperature and then this influence the total properties. Also, it has been confirmed that the applied voltage on semiconducting ceramics affect mainly the electrode interface, and thus the resistance and capacitance decrease due to the variation of potential barrier layers.

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