• Journal of Mechanical Science and Technology
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• v.20 no.5
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• pp.621-633
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• 2006

To reflect the size effect of material $(1\sim15{\mu}m)$ during plastic deformation of polycrystalline copper, a constitutive equation which includes the strain gradient plasticity theory and intrinsic material length model is coupled with the finite element analysis and applied to plane strain deformation problem. The method of least square has been used to calculate the strain gradient at each element during deformation and the effect of distributed force on the strain gradient is investigated as well. It shows when material size is less than the intrinsic material length $(1.54{\mu}m)$, its deformation behavior is quite different compared with that computed from the conventional plasticity. The generation of strain gradient is greatly suppressed, but it appears again as the material size increases. Results also reveal that the strain gradient leads to deformation hardening. The distributed force plays a role to amplify the strain gradient distribution.

• Transactions of Materials Processing
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• v.15 no.8 s.89
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• pp.544-549
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• 2006

In this work, we have employed the strain gradient plasticity theory to investigate the effect of material size on the deformation behavior in metal forming process. Flow stress is expressed in terms of strain, strain gradient (spatial derivative of strain) and intrinsic material length. The least square method coupled with strain gradient plasticity was used to calculate the components of strain gradient at each element of material. For demonstrating the size effect, the proposed approach has been applied to plane compression process and micro rolling process. Results show when the characteristic length of the material comes to the intrinsic material length, the effect of strain gradient is noteworthy. For the microcompression, the additional work hardening at higher strain gradient regions results in uniform distribution of strain. In the case of micro-rolling, the strain gradient is remarkable at the exit section where the actual reduction of the rolling finishes and subsequently strong work hardening take places at the section. This results in a considerable increase in rolling force. Rolling force with the strain gradient plasticity considered in analysis increases by 20% compared to that with conventional plasticity theory.

• Proceedings of the KSME Conference
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• 2005.11a
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• pp.160.1-160.1
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• ALGAE
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• v.36 no.4
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• pp.327-332
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• 2021

Raw material of gelidioid red algae yielding high-quality agar has been in short supply due to overharvesting, but in situ farming of gelidioids has not been practical due to their slow growth. To produce vegetative seedstock of a cosmopolitan species, Pterocladiella capillacea, we investigated the number and length of regenerated branches arising from sectioned fragments during 3 weeks of laboratory culture at 10, 15, 20, and 25℃. All sectioned fragments formed axis-like branches mostly from the upper cut edge and stolon-like branches mostly from the lower cut edge, showing a high capacity of regeneration and intrinsic bipolarity. At 20℃, the number of regenerated branches increased to 2.74 ± 1.29 on the upper cut edge and 4.26 ± 2.66 on the lower cut edge. Our study reveals that the use of fragments bearing regenerated branches as seedstock can be a simple method to initiate fast propagation for mass cultivation in the sea or outdoor tank.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.361.1-361.1
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• 2016

Due to their high sensitivity, fast response, small energy consumption and ease of integration, nanoelectromechanical systems (NEMS) have attracted much interest in various applications such as high speed memory devices, energy harvesting devices, frequency tunable RF receivers, and ultra sensitive mass sensors. Since the device performance of NEMS is closely related with the mechanical and flexural properties of the material in NEMS, analysis of the mechanical and flexural properties such as intrinsic tensile stress and Young's modulus is a crucial factor for designing the NEMS structures. In the present work, the intrinsic mechanical properties of highly stressed silicon nitride (SiN) beams are investigated as a function of the beam length using two different techniques: (i) dynamic flexural measurement using optical interferometry and (ii) quasi-static flexural measurement using atomic force microscopy. The reliability of the results is analysed by comparing the results from the two different measurement techniques. In addition, the mass density, Young's modulus and internal stress of the SiN beams are estimated by combining the techniques, and the prospect of SiN based NEMS for application in high sensitive mass sensors is discussed.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.265-272
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• 2023

Photoelectrochemical (PEC) water splitting is one of the promising methods for hydrogen production by solar energy. Iron oxide has been effectively investigated as a photoelectrode material for PEC water splitting due to its intrinsic property such as short minority carrier diffusion length. However, iron oxide has a low PEC efficiency owing to a high recombination rate between photoexcited electrons and holes. In this study, we synthesized nanoporous structured iron oxide by anodization to overcome the drawbacks and to increase surface area. The anodized iron oxide was annealed in Ar atmosphere with different purging times. In conclusion, the highest current density of 0.032 mA/cm² at 1.23 V vs. RHE was obtained with 60 s of pursing for iron oxide(Fe-60), which was 3 times higher in photocurrent density compared to iron oxide annealed with 600 s of pursing(Fe-600). The resistances and donor densities were also evaluated for all the anodized iron oxide by electrochemical impedance spectra and Mott-Schottky plot analysis.

• Ecology and Resilient Infrastructure
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• v.10 no.3
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• pp.64-72
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• 2023

Biopolymer is a versatile material used in food processing, medicine, construction, and soil reinforcement. 𝛽-glucan is one of the biopolymers that improves the soil water content and ion adsorption in a drought or toxic metal contaminated land for plant survival. We analyzed drought stress damage reduction in sweet potatoes (Ipomoea batatas L. cv. Sodammi) by measuring the growth and major protein expression and activity under 𝛽-glucan soil amendment. The result showed that sweet potato leaf length and width were not affected by drought stress for 14 days, but sweet potatoes grown in 𝛽-glucan-amended soil showed an effect in preventing wilting caused by drought in phenotypic changes. Under drought stress, sweet potato leaves did not show any changes in electrolyte leakage, but the relative water content was higher in sweet potatoes grown in 𝛽-glucan-amended soil than in normal soil. 𝛽-glucan soil amendment increased the expression of plasma membrane (PM) H⁺-ATPase, but it decreased the aquaporin PIP2 (plasma membrane intrinsic protein 2) in sweet potatoes under drought stress. Moreover, water maintenance affected the PM H⁺-ATPase activity, which contributed to tolerance under drought stress. These results indicate that 𝛽-glucan soil amendment improves the soil water content during drought and affects the water supply in sweet potatoes. Consequently, 𝛽-glucan is a potential material for maintaining soil water contents, and analysis of the major PM proteins is one of the indicators for evaluating the biopolymer effect on plant survival under drought stress.

• Structural Engineering and Mechanics
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• v.44 no.4
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• pp.431-448
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• 2012

In this paper, the first-order shear deformation theory (FSDT) (Mindlin) for continuum incorporating surface energy is exploited to study the static behavior of ultra-thin functionally graded (FG) plates. The size-dependent mechanical response is very important while the plate thickness reduces to micro/nano scales. Bulk stresses on the surfaces are required to satisfy the surface balance conditions involving surface stresses. Unlike the classical continuum plate models, the bulk transverse normal stress is preserved here. By incorporating the surface energies into the principle of minimum potential energy, a series of continuum governing differential equations which include intrinsic length scales are derived. The modifications over the classical continuum stiffness are also obtained. To illustrate the application of the theory, simply supported micro/nano scaled rectangular films subjected to a transverse mechanical load are investigated. Numerical examples are presented to present the effects of surface energies on the behavior of functionally graded (FG) film, whose effective elastic moduli of its bulk material are represented by the simple power law. The proposed model is then used for a comparison between the continuum analysis of FG ultra-thin plates with and without incorporating surface effects. Also, the transverse shear strain effect is studied by a comparison between the FG plate behavior based on Kirchhoff and Mindlin assumptions. In our analysis the residual surface tension under unstrained conditions and the surface Lame constants are expected to be the same for the upper and lower surfaces of the FG plate. The proposed model is verified by previous work.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.