• Korean Journal of Materials Research
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• v.14 no.1
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.107-107
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• 1996

• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.81-84
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• 1995

A reliable bonding between two silicon wafers, regularly grooved and non-grooved, was done by the direct boning technology, It is Presented that high structural duality was realized not only at the bended interface but in the bulk, commensurate with the filling of artificial grooves, which would be attributed to the dislocation-gettering capability of groove free-surfaces during annealing. The groove filling would be explained with mass-transport phenomena assisted by the dislocation movement from initial contact boundaries toward groove surfaces. Intrinsic voids can be easily removed by aid of the grooves. The proposed method yielded also an intimate bonding not only between {111} wafers strongly misoriented and slightly inclined to {111} basal plane but even between {111} and {100} orientation wafers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.32-32
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• 2008

X-ray detector는 의료용, 산업용 등 다양한 분야에서 사용되어지고 있으며 기존의 Analog X-ray 방식의 환경오염, 저장공간 부족, 실시간 분석의 어려움 등의 문제점들을 해결하기 위하여 Digital X-ray로의 전환과 연구가 활발하며 이에 따른 관심도 높아지고 있는 살점이다. Digital X-ray detector는 p-영역과 n-영역 사이에 아무런 불순물을 도핑하지 않은 진성반도체(intrinsic semiconductor) 층을 접합시킨 이종접합 PIN 구조의 photodiode 이다. 이 소자는 역바이어스를 가해주면 p영역과 n영역 사이에서 캐리어 (carrier)가 존재하지 않는 공핍 영역이 발생하게 된다. 이런 공핍 영역에서 광흡수가 일어나면, 전자-정공 쌍이 발생한다. 그리고, 발생한 전자-정공 쌍에 전압이 역방향으로 인가되는 경우, 전자는 양의 전극으로 이동하고, 정공은 음의 전극으로 이동한다. 이와 같이, 발생한 캐리어들을 검출하여 전기적인 신호로 변환 시킨다. 고해상도의 Digital X-ray detector를 만들기 위해서는 누설전류에 의한 noise 감소와 소자의 높은 안정성과 내구성을 위한 높은 breakdown voltage를 가져야 한다. 본 연구에서는 Digital X-ray detector의 leakage current 감소와 breakdown voltage를 높이기 위하여 guradring과 gettering technology를 사용하여 전기적 특성을 분석하였다. 기판으로는 $10k\Omega{\cdot}cm$ resistivity를 갖으며, n-type <111>인 1mm 두께의 4인치 Si wafer를 사용하였다. 그리고 pixel pitch는 $100{\mu}m$이며 active area는 $80{\mu}m{\times}80{\mu}m$인 $32\times32$ array를 형성하여 X-ray를 조사하여 소자의 특성을 평가 하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.796-803
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• 1998

Intrinsic and proximity gettering are popular processes to get higher cumulative production yield and usually adopt multi-step annealing and high energy ion implantation, respectively. In order to test the combined processed of these, high energy \ulcornerAs\ulcorner ion implantation and 2-step annealing process were adopted. After the ion implantation followed by 2-step annealing, the wafers were cleaved and etched with Wright etchant. The morphology of cross section on samples was inspected by FESEM. The concentration profile of As was measured by SRP. The location and type of secondary defects inspected by HRTEM were dependent on the 1st annealing temperatures. That is, a line of dislocation located at $1.5mutextrm{m}$ apart from the surface at $600^{\circ}C$ lst annealing was changed to some dislocation lines or loops nearby the surface at 100$0^{\circ}C$. The density of dislocation line was reduced but the size of the defects was enlarged as the temperature increased.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.733-741
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• 1996

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.