• Title/Summary/Keyword: Josephson junctions

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Dynamical transition of Josephson vortex lattice in serially stacked ${Bi_2}{Sr_2}{CaCu_2}{O_{8+x}}$ intrinsic Josephson junctions

  • Myung-Ho;Hu-Jong
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.52-55
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    • 2004
  • The inductive coupling theory in serially stacked $Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ intrinsic Josephson junctions predicts that the lattice structure of the Josephson vortices along the c axis gradually changes from the triangular to the rectangular lattice with increasing the vortex velocity. This lattice transition appears as voltage jumps or sub-branch splitting in the Josephson vortex-flow region of current-voltage characteristics (IVC). We report the IVC in external magnetic fields from 2 to 4 T. The stack, with the lateral size of 1.4${\times}$15 $u\m^2$, was fabricated by using the double-side cleaving technique. The sub-branches in the Josephson vortex-flow region, corresponding to a plasma propagation mode in serially coupled intrinsic Josephson junctions, were also observed in the range of 2∼4T. Switching from one branch to another in Josephson vortex-flow region suggests the structural transition of the moving Josephson vortex lattice.

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Fabrication of interface-controlled Josephson Junctions by Ion beam damage

  • 김상협;김준호;성건용
    • Progress in Superconductivity
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    • v.3 no.2
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    • pp.168-171
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    • 2002
  • We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

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Fluxon resonance steps in the $Bi_2Sr_2CaCu_2O_{8+x}$ single crystals

  • Bae, Myung-Ho;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.138-142
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    • 2007
  • We observed discrete fluxon-flow resonance steps in high magnetic fields in a stack of Josephson junctions with lateral size of $1.5{\times}17{\mu}m^2$. The measurement sample was prepared by sandwiching a stack of $Bi_2Sr_2CaCu_2O_{8+x}$ intrinsic Josephson junctions between two Au electrodes by using the double-side-cleaving technique. This technique allowed us to isolate the intrinsic Josephson junction structures from the inductive interference of the basal stack. The resonance steps observed are in good agreement with the collective Josephson fluxon dynamics that are in resonance with the plasma oscillation modes inside the stacked Josephson junctions.

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Novel Interface-engineered Junction Technology for Digital Circuit Applications

  • Yoshida, J.;Katsuno, H.;Inoue, S.;Nagano, T.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.1-4
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    • 2001
  • Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

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[ $Bi_2Sr_2CaCu_2O{8+\delta}$ ] Intrinsic Josephson Junctions in a Parallel Magnetic Field

  • Lee, J.H.;Chong, Yon-Uk;Lee, Su-Youn;Khim, Z.G.
    • Progress in Superconductivity
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    • v.1 no.2
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    • pp.110-114
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    • 2000
  • We have investigated the Josephson vortex dynamics in $Bi_2Sr_2CaCu_2O{8+\delta}$ intrinsic Josephson junctions subjected to a magnetic field parallel to $CuO_2$ planes. We investigated mesas with $40\times40{\mu}m^2$ in size and containing 6 and 20. intrinsic junctions. The zero field I-V characteristics exhibited a typical hysteretic, multi-branched nature of the intrinsic Josephson effect. At high magnetic fields (H>1.5 T), I-V characteristics showed flux flow steps. The Swihart velocity obtained from this observation was about $4.2\times10^5$ m/s, which was the lowest mode electromagnetic wave velocity of N coupled stack. The experimental I-V curves fitted well into the simple model of Cherenkov radiation including Ohmic and non-linear dissipation terms. This suggests that the dissipation mechanism of Josephson vortex be due to both Cherenkov radiation and quasiparticle tunneling current.

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Effect of spin-polarized current injection on pair tunneling properties of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ intrinsic Josephson junctions

  • Shin, Ho-Seop;Lee, Hu-Jong;Do Bang;Nguyen Khac Mac
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.5-8
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    • 2003
  • We studied the effect of spin injection on tunneling conduction properties of intrinsic Josephson junctions formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals. properties of an identical stack (10${\times}$5.0${\times}$0.030 $\mu\textrm{m}^3$) of intrinsic Josephson junctions were compared for the bias current injected through Au and Co electrodes. The suppression of the superconducting gap in the $_2$ double layers and the interlayer Josephson critical current was manifested in the tunneling current-voltage characteristics of the stacks. This effect appears to be caused by the pair breaking associated with spin-polarized carriers injected from the Co electrode into the $Bi_2$$Sr_2$$_2$O$CaCu_{ 8+x}$ single crystal. This study may provide valuable information on clarifying the mechanism of high- $T_{c}$ superconductivity.y.y.

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Fabrication of High-T$_c$ Superconducting Josephson Junctions by Ar lon Milling and E-Beam Lithography (Ar 이온빔 식각과 전자선리소그래피 방벙으로 제작한 고온초전도 조셉슨 접합)

  • Lee, Moon-Chul;Kim, In-Seon;Lee, Jeong-O;Yoo, Kyung-Hwa;Park, Yong-Ki;Park, Jong-Chul
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.91-94
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    • 1999
  • A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

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