• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.12
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• pp.15-19
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• 2016

The gate bias dependence of kink phenomenon with a large deviation from the resistance circle in Smith chart is observed in the frequency response of $S_{11}$-parameter for large multi-finger RF MOSFETs. For the first time, this bias dependence is analyzed by measuring magnitude and phase of $S_{11}$-parameter, input resistance and input capacitance. As a result, $V_{gs}$ dependent $S_{11}$-parameter is largely changed by the magnitude of input capacitance as well as dominant pole and zero frequencies of input resistance. At $V_{gs}=0V$, the kink phenomenon occurs in the high frequency region because of very small phase difference of $S_{11}$-parameter and high pole frequency of input resistance. However, the kink phenomenon at higher $V_{gs}$ is generated in the low frequency region owing to large phase difference and low pole frequency.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.1
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• pp.13-17
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• 2003

The influence of structural transition on the resistance and impedance behavior of Ni$_2$MnGa alloy was investigated. The temperature-dependent resistance and impedance were measured in a temperature range of 4 - 350 K and 185 - 300 K, respectively. The dependence of temperature coefficient of resistivity on temperature shows a kink at 220 K, which is related to the structural transition. The change in dominant scattering mechanism results in the observed kink. Significant increases were also observed around the transition temperature for both real and imaginary parts of impedance. It is thought that this phenomenon originates from disappearance of the martensite twin boundaries during the structural transformation.

• Proceedings of the Korean Geotechical Society Conference
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• 2009.03a
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• pp.729-736
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• 2009

Several well resistance effects induced by bending, confining stress, temperature, bubbles, and apparent opening size have been considered and researched for the reasonable PBD design. The effect of apparent opening size(AOS), however, was not extensively studied and the clogging effect by AOS was not clearly researched. In this paper, the slurry consolidation test which 4 types of PBD are installed in large slurry consolidometer($H{\times}D$, $2.0m{\times}1.2m$) is performed to investigate the clogging effect by filter's AOS. The results show that the internal clogging is observed all types of PBD, and a quantity of inflowed soil particles are increased at the lower part of PBD and the kink zone. In addition, the internal clogging phenomenon does not relate with the shape and size of PBD. In filter's AOS test, it was easily observed that soil particles bigger than AOS of tested filter passed PBD filter by SEM. This paper demonstrates that the reduction of discharge capability may be accelerated by internal clogging at the kink zone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.99-100
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• 2009

SGOI 1T-DRAM cells with various Ge mole fractions were fabricated and compared to the SOI 1T-DRAM cell. SGOI 1T-DRAM cells have a higher leakage current than SOI 1T-DRAM cell at subthreshold region. The leakage current due to crystalline defects and interface states at Si/SiGe increased with Ge mole. This phenomenon causes sensing margin and the retention time of SGOI 1T-DRAMs decreased with increase of Ge mole fraction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.26-29
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• 1999

The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10$^{-12}$ A independent of gate and drain voltage because the electric field is weakened by the increase of the depletion region width near the drain region. It is shown that the offset regions behave as a series resistance and reduce lateral and vertical electric field.

• Electrical & Electronic Materials
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• v.7 no.4
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.