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Study of Design for Digital Appliance Interlace Using Analog Metaphor (아날로그 메타포를 활용한 디지털 가전 제품의 인터페이스 디자인 연구)

  • Shim, Jae-Hee;Yang, Jeong-Hwa;Jang, Sae-Hun
    • 한국HCI학회:학술대회논문집
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    • pp.334-339
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    • 2008
  • 요즈음 각종 미디어를 통해 '디지로그' 라는 신조어가 주목 받고 있다. 디지로그의 핵심은 디지털 기반의 이분법적인 사고의 틀을 보완하기 위해 아날로그적인 감성의 도입을 의미한다. 이는 기능중심적인사고로 해결할 수 없는 인간과 컴퓨터의 간극을 새롭게 조명할 수 있는 기회를 제공함으로서 HCI 문제의 새로운 대안으로 떠오르고 있다. 기존 생활가전제품 인터페이스의 중요한 목적은 사용성, 유용성과 같은 기능적인 측면 이었다. 이는 제품자체의 목적을 그 기능에 국한하였기 때문이다. 하지만 현재 에어컨, 냉장고와 같은 생활 가전제품들의 위상은 기능을 넘어 집안의 인테리어의 요소로써의 역할 뿐만 아니라 자신을 대변 할 수 있는 혹은 과시하고 싶은 명품 이미지로써 점차 자리잡기 시작하였다. 또한 TFT Color LCD의 도입은 제품의 상태를 단순히 전달해 주는 단계를 벗어나 심미적인 표현까지 가능하게 해주었다. 이를 계기로 수채화 표현기법과 같은 아날로그 메타포를 활용한 감성적 인터페이스가 시도될 수 있었다. 아날로그 메다포를 활용한 디지털 가전 인터페이스의 첫 번째 단계는 스타일이다. 아날로그적인 스타일을 가장 대표적으로 보여주는 것은 바로 회화영역이다. 에어컨 공기청정기능의 프로그레시브 영역에 수채화로 표현된 산과 들을 보여줌으로서 인터페이스가 하나의 풍경화로서의 접근이 가능하게 된다. 이는 소비자들에게 정신적인 만족감과 더불어 제품의 프리미엄의 이미지를 각인시킨다. 두 번째 단계는 스토리이다. 기능을 디지털의 On/Off에 의거하여 나열 하기보다 기능과 기능사이의 문맥을 스토리로 연결함으로서 아날로그적인 접근이 가능하다. 이러한 스토리의 기준은 사용자의 경험에 기인하여 만들어지게 된다. 마지막으로 활용할 수 있는 단계는 컨텐츠이다. 이제는 한가지로 집중된 기능만으로는 사용자를 만족 시킬 수 없다. 사용자에게 인간적인 체온이 느껴지는 아날로그적인 컨텐츠를 제공함으로서 인터페이스 자체로 감동을 줄 수 있게 된다. 이와 같은 변화는 디지털제품의 궁극적인 목표가 사용자에게 있다는 것을 다시 한번 확인시켜준다. 이제는 똑똑하고 편리한 인터페이스를 넘어 사용자체가 감성적 만족감을 주는 매력적인 인터페이스로 진화 하고 있는 것이다.

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Development of Embedded X-System (임베디드 X-시스템 개발)

  • Jeong, Gab-Joong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • pp.641-644
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    • 2008
  • This paper describes the GUI implementation of an intelligent embedded system which can be used for a personal information platform and an industrial mobile application system. It shows the architecture and the necessary structure and components of X Window graphic system. The embedded system used in this paper has low power and high performance processor, and has a large memory size with a nand-flash memory device. We configured the linux kernel with a TIT-LCD and touch screen device for the operation of X Window system. And we used GTK+2 for running application softwares on the platform embedded system. The GUI library of GTK+2 is useful for providing the same graphics programming environment with host Linux PC. We have developed in this paper the X Window system and the GUI environment for GTK+2 in a new embedded system, and verified the full operation of X Window system and application softwares using GTK+2. The embedded system with large memory size can be used in X Window application softwares for providing a personal information service with a mobile embedded system.

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반도체 및 Optic Industries 클린룸 배기가스의 오염제어 및 청정화기술

  • 황유성
    • Air Cleaning Technology
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    • v.17 no.4
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    • pp.39-57
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    • 2004
  • 첨단산업으로 불리는 반도체, LCD, PDP, 유기EL(OLED) 등의 생산 공정은 고도의 청정상태를 요구하며, 때문에 이들의 생산공정 중 대부분이 클린룸 내에서 이루어진다. 클린룸 내에서의 주요공정은 크게 박막형성(Layering), 노광(Photo Lithography), 식각(Etching) 등 3가지 공정으로 나눌 수 있으며, 반도체 제조공정의 경우 특별히 도핑(Doping) 공정이 추가된다. 오염물질을 함유하는 클린룸 배기는 일반적으로 산, 알칼리, Toxic(PFCs, Flammable), VOC 등으로 분류하며, 각각의 배기는 각 배기특성에 맞는 오염제어 장치를 통해, 정화된 후, 대기로 방출된다. 산, 알칼리 배기는 일반적으로 최종 단계에서 중앙집중식 습식스크러버에 의해 흡수, 중화 처리되며, VOC의 경우 농축기(Concentrator) & 축열식 열 산화장치(RTO) 설비에 의해 연소 처리된다. 하지만 CVD공정으로부터의 배기가 주를 이루는 Toxic배기의 경우, 다량의 PFCs(과불소화합물) 가스를 함유하고 있는 이유로, 대부분 클린룸 내부에 P.O.U(Point of use) 처리장치가 설치되며, P.O.U에 의해 1차 처리된 후 최종적으로 중앙집중식 습식스크러버를 거쳐 대기로 방출된다. 알칼리배기의 주성분으로는 암모니아($NH_3$), HMDS (Hexa Methyl DiSilazane), TMAH (Tetra Methyl Ammonium Hydroxide), LGL, CD 등이며 흡수액에 황산(Sulfuric Acid)용액을 공급, 중화처리하고 있다. 탄소성분을 먹이로 하는 미생물의 번식에 의한 막힘 문제를 제외하고는 큰 문제가 없다. 하지만 Toxic배기 및 산배기의 경우 처리효율이, 가스흡수 이론에 의한 계산결과와 비교할 때, 매우 저조하게 나타나는 효율부족 현상을 겪고 있으며, 이는 잔여 PFCs 가스성분 및 반응에어로졸, 응축에어로졸 등의 영향으로 추정하고 있다. 최근 Toxic 배기의 경우, P.O.U 설비를 Burn & Wet type으로 변경하여, 배기 중 PFCs 및 반응에 에어로졸($SiO_2$)의 농도를 원천적으로 감소시키는 노력이 진행 중이다. 산배기의 경우, 산결로 현상에 의한, 응축에어로졸이 문제가 되고 있으나 내식열교환기(Anti-Corrosive Heat Exchanger), 하전액적스크러버 시스템(Charged Droplets Scrubber System), Wet ESP(Wet Electrostatic Procipitator) 등의 도입을 통해 문제해결을 위한 노력을 경주하고 있다.

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A Study on The Development and Function Test of Digital Transformer Protection Relay Using The Induced Voltage (유기전압비를 이용한 디지털형 변압기 보호계전기 개발 및 성능시험에 관한 연구)

  • Jung, Sung-Kyo;Lee, Jae-Kyung;Kim, Han-Do;Choi, Dae-Gil;Kang, Yong-Chul;Kang, Sang-Hee
    • Proceedings of the KIEE Conference
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    • pp.216-218
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    • 2001
  • The transformer role is very important in power system operation and control; also its price is very expensive. Therefore many kinds of the efforts for transformer protection have been executed. So for as, current differential relay(87) has been mainly used for transformer protection. But current differential relaying method has several troubles as followings. Differential current can be occurred by transformers inrush current between winding1 and winding2 of transformer when transformer is initially energized. Also harmonic restrained element used in current differential relaying method is one of the causes of relays mal-operation because recently harmonics in power system gradually increase by power switching devices(SVC, FACTS, DSC, etc). Therefore many kinds of effort have been executed to solve the trouble of current differential relay and one of them is method using ratio of increment of flux linkages(RIFL) of the primary and secondary windings. This paper introduces a novel protective relay for power transformers using RIFL of the primary and secondary windings. Novel protective relay successfully discriminates between transformer internal faults and normal operation conditions including inrush and this paper includes real time test results using RTDS(Real Time Digital Simulator) for novel protective relay. A novel protective relay was designed using the TMS320C32 digital signal processor and consisted of DSP module. A/D converter module, DI/DO module, MMI interface module and LCD display module and developed by Xelpower co., Ltd.

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Metallizations and Electrical Characterizations of Low Resistivity Electrodes(Al, Ta, Cr) in the Amorphous Silicon Thin Film Transistor (비정질 실리콘 박막 트랜지스터 소자 특성 향상을 위한 저 저항 금속 박막 전극의 형성 및 전기적 저항 특성 평가)

  • Kim, Hyung-Taek
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.96-99
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    • 1993
  • Electrical properties of the Thin Film Transistor(TFT) electrode metal films were investigated through the Test Elements Group(TEG) experiment. The main purpose of this investigation was to characterize the electrical resistance properties of patterned metal films with respect to the variations of film thickness and TEG metal line width. Aluminum(Al), Tantalum(Ta) and Chromium(Cr) that are currently used as TFT electrode films were selected as the probed metal films. To date, no work in the electrical characterizations of patterned electrodes of a-Si TFT was accomplished. Bulk resistance$(R_b)$, sheet resistance$(R_s)$, and resistivities($\rho$) of TEG patterned metal lines were obtained. Electrical continuity test of metal film lines was also performed in order to investigate the stability of metallization process. Almost uniform-linear variations of the electrical properties with respect to the metal line displacements was also observed.

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Fabrication and Test of a $HgI_2$ Gamma Ray Detector (감마선 검출용 $HgI_2$ 소자 제작 및 특성 평가)

  • Choi, Myung-Jin;Lee, Hong-Kyu;Kang, Young-Il;Lim, Ho-Jin;Choi, Seung-Ki
    • Journal of Radiation Protection and Research
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    • v.16 no.2
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    • pp.1-6
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    • 1991
  • The $HgI_2$ single crystal which can be used for the ${\gamma}-ray$ detector at room temperature was grown by Temperature Oscillation Method. The low temperature photoluminescence, specific resistivity and trap concentration of $HgI_2$ single crystal were investigated. Three main luminescence bands were observed at 2.30eV, 2.20eV and 2.00eV at 20K, related to the excitons, I-vacancies and impurities, respectively. The specific resistivity and trap concentration of $HgI_2$ single crystal were $10^{11}{\Omega}\;cm\;and\;1.8{\times}10^{14}/cm^3$ at room temperature, respectively. Also the radiation detecting system was deviced by $HgI_2$ ${\gamma}-ray$ detector, one chip microprocessor, LCD module and personal computer. The prepared $HgI_2$ ${\gamma}-ray$ detector showed a good linearity of ${\gamma}-radiation$ dose for standard ${\gamma}-ray$.

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Reduction of Speckle Noise in Images Using Homomorphic Wavelet-Based MMSE Filter with Edge Detection (에지 영역을 고려한 호모모르픽 웨이브렛 기반 MMSE 필터를 이용한 영상 신호의 스펙클 잡음 제거)

  • 박원용;장익훈;김남철
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.11C
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    • pp.1098-1110
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    • 2003
  • In this paper, we propose a homomorphic wavelet-based MMSE filter with edge detection to restore images degraded by speckle noise. In the proposed method, a noisy image is first transformed into logarithmic domain. Each pixel in the transformed image is then classified into flat and edge regions by applying DIP operator to the image restored by homomorphic directional MMSE filter. Each pixel in flat region is restored by homomorphic wavelet-based MMSE filter. Each pixel in edge region is restored by the weighted sum of the output of homomorphic wavelet-based MMSE filtering and that of homomorphic directional MMSE filtering. The restored image in spatial domain is finally obtained by applying the exponential function to the restored image in logarithmic domain. Experimental results show that the restored images by the proposed method have ISNR improvement of 3.3-4.0 ㏈ and ${\beta}$, a measurement parameter on edge preservation, improvement of 0.0103-0.0126 and superior subjective image quality over those by conventional methods.

A Modification of Human Error Analysis Technique for Designing Man-Machine Interface in Nuclear Power Plants (원자력 발전소 주제어실 인터페이스 설계를 위한 인적오류 분석 기법의 보완)

  • Lee, Yong-Hui;Jang, Tong-Il;Im, Hyeon-Gyo
    • Journal of the Ergonomics Society of Korea
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    • v.22 no.1
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    • pp.31-42
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    • 2003
  • This study describes a modification of the technique for human error analysis in nuclear power plants (NPPs) which adopts advanced Man-Machine Interface (MMI) features based on computerized working environment, such as LCOs. Flat Panels. Large Wall Board, and computerized procedures. Firstly, the state of the art on human error analysis methods and efforts were briefly reviewed. Human error analysis method applied to NPP design has been THERP and ASEP mainly utilizing Swain's HRA handbook, which has not been facilitated enough to put the varied characteristics of MMI into HRA process. The basic concepts on human errors and the system safety approach were revisited, and adopted the process of FMEA with the new definition of Error Segment (ESJ. A modified human error analysis process was suggested. Then, the suggested method was applied to the failure of manual pump actuation through LCD touch screen in loss of feed water event in order to verify the applicability of the proposed method in practices. The example showed that the method become more facilitated to consider the concerns of the introduction of advanced MMI devices, and to integrate human error analysis process not only into HRA/PRA but also into the MMI and interface design. Finally, the possible extensions and further efforts required to obtain the applicability of the suggested method were discussed.

Study on the Hydrogen Treatment Effect of Vacuum deposited Pentacene Thin Film Transistors

  • Lee, Joo-Won;Chang, Jae-Won;Kim, Hoon;Kim, Kwang-Ho;Kim, Jai-Kyeong;Kim, Young-Chul;Lee, Yun-Hi;Jang, Jin;Ju, Byeong-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.668-672
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    • 2003
  • In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

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A Study on Low Temperature Sequential Lateral Solidification(SLS) Poly-Si Thin Film Transistors(TFT′s) with Molybdenum Gate (Molybdenum 게이트를 적용한 저온 SLS 다결정 TFT′s 소자 제작과 특성분석에 관한 연구)

  • 고영운;박정호;김동환;박원규
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.6
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    • pp.235-240
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    • 2003
  • In this paper, we present the fabrication and the characteristic analysis of sequential lateral solidification(SLS) poly-Si thin film transistors(TFT's) with molybdenum gate for active matrix liquid displays (AMLCD's) pixel controlling devices. The molybdenum gate is applied for the purpose of low temperature processing. The maximum processing temperature is 55$0^{\circ}C$ at the dopant thermal annealing step. The SLS processed poly-Si film which is reduced grain and grain boundary effect, is applied for the purpose of electrical characteristics improvements of poly-Si TFT's. The fabricated low temperature SLS poly-Si TFT's had a varying the channel length and width from 10${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$. And to analyze these devices, extract electrical characteristic parameters (field effect mobility, threshold voltage, subthreshold slope, on off current etc) from current-voltage transfer characteristics curve. The extract electrical characteristic of fabricated low temperature SLS poly-Si TFT's showed the mobility of 100~400cm$^2$/Vs, the off current of about 100pA, and the on/off current ratio of about $10^7$. Also, we observed that the change of grain boundary according to varying channel length is dominant for the change of electrical characteristics more than the change of grain boundary according to varying channel width. Hereby, we comprehend well the characteristics of SLS processed poly-Si TFT's witch is recrystallized to channel length direction.