• Title/Summary/Keyword: LSI memories

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A Study on Analysis of Electrostatics Destruction of Electronic Equipment (전자부품의 정전파괴(ESD) 분석에 관한 연구)

  • Lee, Du-Young
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.10 no.6
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    • pp.235-241
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    • 2010
  • The static electricity generated by friction of two objects is called frictional electricity. The main cause of troubles in electronic components for military and civil use as well as in military radar appliances is found mostly in parts like LSI memories, particularly when they lose information of function momentarily while in operation, which usually leads to a fatal cause of troubles in the equipment. Troubles occur if electric noise is caused by the spark effected from discharge of static electricity from the equipment that is used nearby.

Proposal of Framing System Realization for Synchronization Stability Improvement (동기 안정도 개선을 위한 동기 시스템 장치화의 제안)

  • Lim, Joung-Suk;Yeom, Heung-Yeol;Chang, Dae-Ig;Rhee, Man-Young
    • Proceedings of the KIEE Conference
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    • 1988.07a
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    • pp.161-164
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    • 1988
  • The purpose of this paper is to propose a simple firmware realization of PCM framing system, which exploits LSI memories for performance improvement and hardware simplification. The proposed system simply consists of a tapped delay line for simultaneous observation of in framing-bits and ROM programmed sequence controller for framing process. Perpormance analyses are made in terms of misframe interval, sync-loss-detection time and reframe time. The proposed strategy proved to be significantly better in reframe time, stability and hardware implementation.

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Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity

  • Kim, Hyungjin;Cho, Seongjae;Sun, Min-Chul;Park, Jungjin;Hwang, Sungmin;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.657-663
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    • 2016
  • In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide-semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.