• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.39-42
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• 2003

Low temperature polysilicon (LTPS) TFT LCOs are in production today at sizes ranging from 0.33" for Viewfinders to 17" for LCD TVs with 21.3" recently demonstrated. Because of their form factor, resolution, brightness and other benefits, LTPS TFT LCD unit shipments, revenues and capacity are expected to grow rapidly, particularly for mobile applications. However, despite the strong outlook, LTPS TFT LCOs are still faced with numerous challenges from a market and technology perspective. LTPS TFT LCD producers were surveyed on which of the current challenges were the most problematic among other questions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.31-38
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• 2009

To improve the image quality and lower the power consumption of the mobile applications, it is the one of the best candidate to control the backlight unit of the LCD module with ambient light. Ambient light sensor and readout circuit were integrated in LCD panel for the mobile applications, and we designed them with LTPS TFT. We proposed noble start-up correction in order to correct the variation of the photo sensors in each panel. We used time-to-digital method for converting photo current to digital data. To effectively merge time-to-digital method with start-up correction, we proposed noble dual slope correction method. The entire readout circuit was designed and estimated with LTPS TFT process. The readout circuit has very simple and stable structure and timing, so it is suitable for LTPS TFT process. The readout circuit can correct the variation of the photo sensors without an additional equipment, and it outputs the 4-levels digital data per decade for input luminance that has a dynamic range of 60dB. The readout rate is 100 times/sec, and the linearity error for digital conversion is less than 18%.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1781-1784
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• 2007

The increase of repetition rate, the dithering of laser optics, and the extension of pulse duration time are major approaches in improving the picture quality of AMOLEDs fabricated by excimer laser crystallization (ELC). Advanced solid phase crystallization (ASPC) has been developed to improve the uniformity and the process cost. Even though the mobility of ASPC-TFT is lower than that of ELC-TFT, it is high enough to drive AMOLED pixels.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.46-49
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• 2002

Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.179-184
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• 2023

We propose the modeling methodology of CMOS inverter made of LTPO TFT using a machine learning. LTPO can achieve advantages of LTPS TFT with high electron mobility as a driving TFT and IGZO TFT with low off-current as a switching TFT. However, since the unified model of both LTPS and IGZO TFTs is still lacking, it is necessary to develop a SPICE-compatible compact model to simulate the LTPO current-voltage characteristics. In this work, a generic framework for combining the existing formula of I-V characteristics with artificial neural network is presented. The weight and bias values of ANN for LTPS and IGZO TFTs is obtained and implemented into PSPICE circuit simulator to predict CMOS inverter. This methodology enables efficient modeling for predicting LTPO TFT circuit characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.85-88
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• 2004

2-inch qVGA (240${\times}$320) TFT-LCD with integrated 6-bit source driver is reported. The pixel density is over than 200ppi and the operation frequency is about 2.8MHz. In order to improve TFT characteristics, TS-SLS (Two-Shot Sequential Lateral Solidification) technology has been employed. A 1:6 demultiplexing scheme has been successfully implemented in the source driver owing to the superb characteristics of the TS-SLS TFTs, which resulted in small driver circuit area.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.685-688
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• 2008

Mini-LVDS has been widely used for high speed data transmission because it provides low EMI and high bandwidth for display driver. In this paper, a Mini-LVDS output buffer with LTPS TFT process is presented which provides sufficient performance in the presence of large variation in the threshold voltage and mobility and kink effect.

• Journal of Information Display
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• v.9 no.3
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• pp.1-7
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• 2008

With the aim of creating a high-quality display system with value-added functions, we designed a current mode multiplexer for LTPS TFT devices. The multiplexers had less than 1 volt logic swing, and speed improvement was evident compared with that of conventional CMOS architecture. We refined the multiplexer to achieve a more stable current steering operation. By using the versatility of the multiplexer, a new NAND/AND and NOR/OR logic gates were designed through the simple modification of signal connections. Two micron LTPS TFT parameters were used during the HSPICE simulation of the circuits.