• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.39-42
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• 2003

Low temperature polysilicon (LTPS) TFT LCOs are in production today at sizes ranging from 0.33" for Viewfinders to 17" for LCD TVs with 21.3" recently demonstrated. Because of their form factor, resolution, brightness and other benefits, LTPS TFT LCD unit shipments, revenues and capacity are expected to grow rapidly, particularly for mobile applications. However, despite the strong outlook, LTPS TFT LCOs are still faced with numerous challenges from a market and technology perspective. LTPS TFT LCD producers were surveyed on which of the current challenges were the most problematic among other questions.

• 대한전자공학회논문지SD
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• 제46권6호
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• pp.31-38
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• 2009

휴대용 기기의 소비 전력을 낮추고 영상의 질을 개선하기 위해, 주변 밝기에 따라서 LCD 모듈의 백라이트를 조정하는 방법을 사용할 수 있다. 이를 효과적으로 구현하기 위해서 LCD 패널에 광 센서와 신호취득 회로를 집적하고자 했으며, LTPS TFT 공정을 이용하여 설계했다. 서로 다른 LCD 패널의 광 센서에 대한 특성 편차를 보정하기 위해 새로운 개념의 start-up 보정 방식을 제안하였다. 이와 더불어 광 전류 정보를 디지털 형태로 전달하기 위해 time-to-digital 방식을 사용하였으며, 이를 start-up 보정 방식과 효과적으로 결합하는 dual slope 보정 방법을 제안하였다. LTPS TFT 공정을 이용하여 최종적인 신호취득 회로를 구현하고자, 간단하고 안정적인 회로 구조와 타이밍을 제안하고 설계 및 검증을 진행했다. 설계한 신호취득 회로는 별도의 검사 설비 없이 광 센서 편차의 보정이 가능하며, 60dB 범위의 입력 광에 대해 10배수 구간 마다 4 단계의 디지털 데이터를 출력한다. 신호취득 속도는 100Hz이며, 디지털 변환의 선형 오차는 18% 미만이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1781-1784
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• 2007

The increase of repetition rate, the dithering of laser optics, and the extension of pulse duration time are major approaches in improving the picture quality of AMOLEDs fabricated by excimer laser crystallization (ELC). Advanced solid phase crystallization (ASPC) has been developed to improve the uniformity and the process cost. Even though the mobility of ASPC-TFT is lower than that of ELC-TFT, it is high enough to drive AMOLED pixels.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.46-49
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• 2002

Recent trends of low-temperature polycrystalline Si (LTPS) TFT technologies are presented. Characteristics of LTPS TFT processes are compared with those of a-Si TFT's. In order to compete with well-established a-Si TFT-LCD technology, LTPS process has to be as simple as possible. One of the most critical processes, recrystallization of a-Si thin films, could be the process for the differentiation of LTPS technology. Along with these technical reviews, a recent development of the 5.0-inch LTPS TFT-LCD is presented. In order to achieve high-performance display characteristics and save the power consumption, the transflective mode is adopted. The 5.0-inch display with 186 pixel-per-inch, high-resolution LCD was measured to be 10% for the reflectance and 70:1 for the contrast ratio. This display is designed for a high information content hand-held PC (HHPC) application.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.179-184
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• 2023

We propose the modeling methodology of CMOS inverter made of LTPO TFT using a machine learning. LTPO can achieve advantages of LTPS TFT with high electron mobility as a driving TFT and IGZO TFT with low off-current as a switching TFT. However, since the unified model of both LTPS and IGZO TFTs is still lacking, it is necessary to develop a SPICE-compatible compact model to simulate the LTPO current-voltage characteristics. In this work, a generic framework for combining the existing formula of I-V characteristics with artificial neural network is presented. The weight and bias values of ANN for LTPS and IGZO TFTs is obtained and implemented into PSPICE circuit simulator to predict CMOS inverter. This methodology enables efficient modeling for predicting LTPO TFT circuit characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.85-88
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• 2004

2-inch qVGA (240${\times}$320) TFT-LCD with integrated 6-bit source driver is reported. The pixel density is over than 200ppi and the operation frequency is about 2.8MHz. In order to improve TFT characteristics, TS-SLS (Two-Shot Sequential Lateral Solidification) technology has been employed. A 1:6 demultiplexing scheme has been successfully implemented in the source driver owing to the superb characteristics of the TS-SLS TFTs, which resulted in small driver circuit area.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.685-688
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• 2008

Mini-LVDS has been widely used for high speed data transmission because it provides low EMI and high bandwidth for display driver. In this paper, a Mini-LVDS output buffer with LTPS TFT process is presented which provides sufficient performance in the presence of large variation in the threshold voltage and mobility and kink effect.

• Journal of Information Display
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• 제9권3호
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• pp.1-7
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• 2008

With the aim of creating a high-quality display system with value-added functions, we designed a current mode multiplexer for LTPS TFT devices. The multiplexers had less than 1 volt logic swing, and speed improvement was evident compared with that of conventional CMOS architecture. We refined the multiplexer to achieve a more stable current steering operation. By using the versatility of the multiplexer, a new NAND/AND and NOR/OR logic gates were designed through the simple modification of signal connections. Two micron LTPS TFT parameters were used during the HSPICE simulation of the circuits.