• International Journal of Precision Engineering and Manufacturing
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• v.9 no.4
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• pp.26-31
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• 2008

A precision four-degree-of-freedom measurement system has been developed for simultaneous measurement of four motion errors of a linear stage, which include straightness and angular errors, The system employs a retro-reflector to detect the straightness errors and a plane mirror to detect the angular errors. A common-path compensation method for laser beam drift is put forward, and the experimental results show that the influences of beam drift on four motion errors can be reduced simultaneously. In comparison with the API 5D laser measuring system, the accuracy for straightness measurement is about ${\pm}1.5{\mu}m$ within the measuring range of ${\pm}650{\mu}m$, and the accuracy for pitch and yaw measurements is about ${\pm}1.5$ arc-seconds within the range of ${\pm}600$ arc-seconds.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.68-73
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• 2004

Flexure measurement of ring laser gyro was investigated by using an interferometer. A two-beam interferometer of Fiezo-fringe pattern obtained the flexure angle in 1-gravity acceleration and the higher acceleration environments. These environments were made with the addition of dummy mass to the ring laser gyro axis. The flexure angle change for 1-gravity acceleration change was measured as 2.37 arcsec/g with low repeatability error of 0.01 arcsec/g. The laser navigation system consisting of 3 flexure-reduced ring laser gyros showed the improvement of flexure error.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.10
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• pp.14-22
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• 2010

The most costly and time-consuming process in the fabrication of today's multi-layer circuit board is drilling interconnection holes between adjacent layers and via holes within a layer. Decreasing size of via holes being demanded and growing number of via holes per panel increase drilling costs. Component density and electronic functionality of today's multi-layer circuit boards can be improved with the introduction of cost-effective, variable depth laser drilled blind micro via holes, and interconnection holes. Laser technology is being quickly adopted into the circuit board industry but can be accelerated with the introduction of a true production laser drilling system. In order to get optimized condition for drilling to FPCB (Flexible Printed Circuit Board), we use various drill pattern as drill step. For productivity, we investigate drill path optimization method. And for the precise drilling the thermal drift of scanner and temperature change of scan system are tested.

• Analytical Science and Technology
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• v.13 no.2
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• pp.222-228
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• 2000

A detector for monitoring carbon monoxide (CO) in ambient air by nondispersive infrared (NDIR) spectroscopy has been developed and investigated its sensitivity and stability. The essential parts of the absorption cell are three spherical concave mirrors so as to improve the sensitivity by increasing the light path length in the cell. The radius and center of curvature of mirrors and position in the cell was calculated by computer simulation in order that the light path length may be 16m into the 50cm cell. The number of traversals and optical path properties were confirmed by laser beam alignment in transparent absorption cell. The photoconductive type lead selenide (PbSe) was used as CO sensing material, which was cooled to increase the responsibility by thermoelectric cooling method. The detection limit and span drift of the developed CO detector was 0.24ppm and 0.03ppm(v/v) respectively.

• Current Optics and Photonics
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• v.2 no.2
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• pp.195-202
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• 2018

A Scanning Rayleigh Doppler lidar for wind profiling based on a non-polarized beam splitter cube optically contacted FPI is developed for wind measurement from high troposphere to low stratosphere in 5-35 km. Non-polarized beam splitter cube optically contacted to the FPI are used for a stable optical receiver. Zero Doppler shift correction is used to correct for laser or FPI frequency jitter and drift and the timing sequence is designed. Stability of the receiver for Doppler shift discrimination is validated by measuring the transmissions of FPI in different days and analyzed the response functions. The maximal relative wind deviation due to the stability of the optical receiver is about 4.1% and the standard deviation of wind velocity is 1.6% due to the stability. Wind measurement comparison experiments were carried out in Jiuquan ($39.741^{\circ}N$, $98.495^{\circ}E$), Gansu province of China in 2015, showing good agreement with radiosonde result data. Continuous wind field observation was performed from October 16th to November 12th and semi-continuous wind field of 19 nights are presented.

• Journal of Biomedical Engineering Research
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• v.24 no.2
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• pp.83-89
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• 2003

The gas electron multiplier placed in the drift volume of conventional gas detectors, is a conceptually simple device for producing a large gas gain by concentrating the drift electric field over a very short distance to the point that electron avalanching occurs(〉 10$^4$ V/cm), greatly increasing the number of drifting electrons. This device consists of a thin insulating foil of several tens of urn in thickness. covered on each side with a thin metal layer(Cu), with tiny holes, usually 100 ${\mu}{\textrm}{m}$ or less in diameter. and with a spacing of 100-200 ${\mu}{\textrm}{m}$ through the entire foil. perforated by using chemical etching or high-powered laser beam technique In this study, we have investigated its operating properties with various experimental conditions, and demonstrated the possibility of using this device as a digital X-ray imaging sensor, by acquiring X-ray images based on the scintillation properties of the gas electron multiplier with standard CCD camera.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.9-12
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• 2003

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.71-76
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• 2012

A Sagnac-type Mach-Zehnder interferometer(SMZI) is a very stable instrument with respect to phase drift because all optical paths can share common optical components. We have observed very stable interference fringes in single photon interference experiments with an extremely attenuated laser beam, and with heralded single photons prepared from polarization correlated photon pairs in type-II spontaneous parametric down-conversion. The phase stability is measured to be about ${\pm}0.18$ rad for the SMZI, in contrast, conventional MZI showed the phase fluctuation of around ${\pm}1.02$ rad.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.